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    Central Semiconductor Corp 2N3396 PBFREE

    Transistor GP BJT NPN 25V 100mA 3-Pin Through Hole TO-92 Box - Boxed Product (Development Kits) (Alt: 2N3396 PBFREE)
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    Central Semiconductor Corp 2N3396 TIN/LEAD

    Transistor GP BJT NPN 25V 100mA 3-Pin Through Hole TO-92 Box - Boxed Product (Development Kits) (Alt: 2N3396 TIN/LEAD)
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    Genteq 2N3396

    Silicon NPN transistor - TO92 Package
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    Onlinecomponents.com 2N3396 1
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    Master Electronics 2N3396 1
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    Molex 0192280147

    Bench Top Tools CAM INSUL ADJ
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    TTI 0192280147 Each 6 1
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    General Electric Company 2N3396

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    Chip 1 Exchange 2N3396 226
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    2N3396 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3396 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N3396 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 25 MinV, TO-92, 3-Pin Scan PDF
    2N3396 Allegro MicroSystems Bipolar transistor Scan PDF
    2N3396 Central Semiconductor NPN EPOXY - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3396 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3396 Continental Device India TO-92 Plastic Transistors Scan PDF
    2N3396 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3396 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N3396 General Electric Semiconductor Data Book 1971 Scan PDF
    2N3396 Micro Electronics NPN silicon planar epitaxial transistor Scan PDF
    2N3396 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3396 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3396 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3396 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3396 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3396 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N3396 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3396 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3396 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3396 Unknown GE Transistor Specifications Scan PDF

    2N3396 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3396 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N3396

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


    Original
    PDF E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


    Original
    PDF

    pnp 2N3906 beta

    Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
    Text: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION


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    PDF 2N3395 2N3396 2N3397 2N3398 2N2926 2N4401 2N4402 2N4403 MPS2713 MPS2714 pnp 2N3906 beta 2n4058 N3904 to-92hs D29E2-J1

    Untitled

    Abstract: No abstract text available
    Text: DEVICE TYPE package BVCEO 8VC BO BVEBO ICBO VCB {V I M IN IV M I N IV ) M I N jm A I MAX |V) HFE <§> VC 4 1C M IN MAX 2N3395 2N3396 2N 3397 2N3398 2N 34U NPN NPN NPN NPN NPN TO-92 TO-92 TO-92 TO-92 TO-92 74) (74) (74) (74) (74) 25 25 25 25 25 25 25


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    PDF 2N3395 2N3396 2N3398 2N3415 2N3416 2N3417 2N3439 2N3440 2N3662 2N3663

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644

    TP4058

    Abstract: TP4059 D33021 2N2711 2N5249 TP3703 TP3704 2N2924 2N2925 2N3392
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â TP3708 TP3709 TP3710 TP3711 TP4058 TP4058 TP4059 D33021 2N5249 TP3703 TP3704 2N3392

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2N3397

    Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3397 n3860

    SE4010

    Abstract: 2N3565 TIS92 2N3692 TIS90 2N2924 PN3565 PN3566 PN3694 PN4249
    Text: TYPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers CASE M A X IM U M R A T IN G S Pd mW 'c (m A | V CE(SAT) h fe V CEO (V) min max 'c (m A) V CE (V) max (V) 'c (m A ) fT m in (MHz) Cob N.F. max max (pF) (dB) PN3565 PN3566 PN3694 PN4249 PN4250


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    PDF PN3565 O-92A PN3566 PN3694 PN4249 PN4250 SE4010 2N3565 TIS92 2N3692 TIS90 2N2924

    n3860

    Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292

    2N3564

    Abstract: 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417
    Text: TO-92 B-H T < 3 2 1 DIM MIN MAX A 4,32 5,33 B 4,45 1 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ - - A iM r o V3 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2


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    PDF O-92-1 O-92-2 O-92-3 O-92-4 2N3564 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


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    PDF DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    2N3565

    Abstract: 2N3692
    Text: Low Level and General Purpose Amplifiers TY PE POLA ­ NO. RITY CASE M A XIM UM RATINGS HFE Pd IC VCEO mW (mA) 00 min max (T Cob N.F. IC VCE V CE(sat) max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 120+ 12 12 12 10 10 - 120+ 120+ 120+ 120+ - 10


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    PDF 2N2924 2N2925 2N2926 2N3390 2N3391 2N3391A 2N3392 2N3393 2N3394 2N3395 2N3565 2N3692

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2N2712

    Abstract: 2N2923 transistor 2n3391 transistor 2n2712 2n3394 2N3395 2N3398 mps6566 2N2711 2n3397
    Text: MPS/2N2923,4,5 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. CASE T0-92Á Their maximum power dissipation = 160mW at Ta=25°C. MPS TYPES


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    PDF MPS/2N2923 160mWat T0-92A T0-92B MPS/2N2711 MPS/2N2712 12pFn@ MPS/2N2716 MPS/2N2924 2N2712 2N2923 transistor 2n3391 transistor 2n2712 2n3394 2N3395 2N3398 mps6566 2N2711 2n3397

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N2712

    Abstract: 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712
    Text: CRO M PS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION T he above types are N P N silico n planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circu its. T h eir m axim um po w er dissipation = I6O111W at T a = 2 5 ° C .


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    PDF I6O111W PS/2N6573 T0-92A T0-92B MPS/2N2711 MPS/2N2712 12pFn® MPS/2N2716 MPS/2N2923 MPS/2N2924 2N2712 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712

    2N3859

    Abstract: No abstract text available
    Text: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )


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    PDF

    2N3643 TO-105

    Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
    Text: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225


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    PDF DD00S10 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 2N3392 CBR12 2N3643 TO-105 2N3566 2N3569 2N3568 central

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


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    PDF 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C

    Untitled

    Abstract: No abstract text available
    Text: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON


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    PDF 160mW T0-92à MPS/2N2923 T0-92B MPS/2N2711 12pFn MPS/2N2712 MPSMPS/2N3398 200MHz Dec-95

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP T3 D • ÖS13ÖSO 0Ü03SÔS ! 8 5 1 4 0 1 9 SPRAGUE. SEM ICONDS/ IC S 1 ■ 93D 0 35 85 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO


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    PDF 1flS13fiSQ O-226AA/STYLE