CXK541 Search Results

Contextual Info: CXK5416P S O N Y 4 f. -1 ft L. / 5 ft 5 ft L 4096-word X 4 bit High Speed CMOS Static RAM U nit: m m Package O u tlin e Description The C X K 5 4 1 6 P is a 1 6 ,3 8 4 b its h ig h speed CMOS 2 0 p in D IP s ta tic R AM o rganize d as 4 ,0 9 6 w o rd s by 4 b its and

CXK541000J-25

Abstract: CXK541000J-30 CXK541000J-35 Static RAM 262144-WORD
Contextual Info: CXK541000J SONY - 25 / 30/35 Advance Information 262144-word X 4-bit High Speed CMOS Static RAM Description C X K 541000J is a 1048576 bits high speed CMOS s ta tic RAM organized as 2 6 2 1 4 4 w ords by 4 bits and operates fro m a single 5V supply. This device is suitable fo r use in hig h speed

CXK5416P

Abstract: I2104
Contextual Info: S O N Y CXK5416P 4 096-w o rd X 4 bit High Speed C M O S Static RAM U nit: mm Package O u tlin e D escriptio n The CXK541 6P is a 1 6 ,3 8 4 b its h ig h speed CMOS s ta tic R AM organize d as 4 ,0 9 6 w o rd s by 4 b its and o p erates fro m a s in g le 5 V supply.

Contextual Info: SONY C XK541020J » » 262144-words x 4-bits High Speed CMOS Static RAM Description The CXK541020J Is a high speed CMOS static RAM organized as 262144-words by 4 bits. it operates at 20ns/25ns access time from 5V single power supply. The CXK541020J is suitable for use in high speed

din 5480

Abstract: CXK5416P din standard 5480
Contextual Info: S O N Y CXK5416P 4 096-w o rd X 4 bit High Speed C M O S Static RAM U nit: mm Package O u tlin e D escriptio n The CXK541 6P is a 1 6 ,3 8 4 b its h ig h speed CMOS s ta tic R AM organize d as 4 ,0 9 6 w o rd s by 4 b its and o p erates fro m a s in g le 5 V supply.

CXK541000J-25

Abstract: CXK541000J-30 SOJ032-P-0400-A
Contextual Info: CXK541000J SONY. -25/30/35 Preliminary 262144-word x 4-bit High Speed CMOS Static RAM Description C X K 5 4 1 0 0 0 J is a 1048576 bits high speed C M O S static R A M organized a s 262144 w ords by 4 bits and operates from a single 5 V supply. T his device is suitable for use in high speed and low

Contextual Info: SONY. C X K 5 4 1 -25/30/35 J Preliminary 262144-word x 4-bit High Speed CMOS Static RAM Description CXK541000J is a 1048576 bits high speed CMOS static RAM organized as 262144 words by 4 bits and operates from a single 5V supply. This device is suitable for use in high speed and low

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

k45l

Abstract: HM6168HP-55 L69A hitachi 6168 hm6168hp-45 51C68-30 51C68-35 51C68-35L HMB2 M6168HLP-45
Contextual Info: - 1 6 K X m a £ °C> TAAC max (ns TCAC max (ns) TO E max (ns) -Í •/ CMOS * y y S t a t i c RAM ( 4 0 9 6 x 4 ) 2 0 P I N 6 1 6 8 À m tî. n TO H t in (ns) TOD max (ns) TWP min (ns) TDS min (ns) TD H min (ns) TWD min (ns) TWR max (ns) VDD o r VCC (V)

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

cx20185

Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
Contextual Info: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1