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    LH5118 Search Results

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    LH5118 Price and Stock

    Sharp Microelectronics of the Americas LH51181N-10

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LH51181N-10 800
    • 1 $6.711
    • 10 $6.711
    • 100 $6.711
    • 1000 $3.3555
    • 10000 $3.3555
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    LH5118 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5118-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5118-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5118-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    LH5118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


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    PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    Untitled

    Abstract: No abstract text available
    Text: LH5118 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 (MAX.) • Single +5 V power supply • Fully static operation • TTL compatible I/O • Three-state outputs • •


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    PDF LH5118 LH5118H: 24-pin, 600-mil 300-mil 450-mil LH5118

    LH5118D

    Abstract: LH5118N-10 lh5118
    Text: LH5118/ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5118 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


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    PDF LH5118/ LH5118H: 24-pin, 600-mil 300-mil 450-mil LH5118 LH5118D LH5118N-10

    LH5118h

    Abstract: lh5118 2K x 8 static ram LH5118N-10 16k x 8 ram DIP24-P-600
    Text: LH5118 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,0 4 8 x 8 bit organization The LH5118 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (M AX.) • Power consumption:


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    PDF LH5118 LH5118H: 24-pin, 600-mil 300-mil 450-mil LH5118h 2K x 8 static ram LH5118N-10 16k x 8 ram DIP24-P-600

    AG2221

    Abstract: LH5118N-10
    Text: LH5118 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5118 is a static RAM organized as 2,048 x 8 bite. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


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    PDF LH5118 LH5118 LH5118H: 24-pin, 600-mil 300-mil AG2221 LH5118N-10

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


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    PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    LH5160N

    Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


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    PDF LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55

    LH5117-10

    Abstract: HM6117HLP-70 LH5118-20 LH5117-15 lh5118-10 lh5117 HM6117LP-4 LH5117-20 M5M5118P-12 HM6117LP-3
    Text: - 56 1 6 K m & tt ¿ a s iE H £ CC CMOS * 4 TAAC max ns) TCAC max (ns) TOE max (ns) + TOH y •/ (ns) TOD max (ns) TWP min (ns) S t a t i c R A M ( 2 0 4 8 x 8) 2 4 P I N 6 1 1 7 ft ft TDS »in (ns) À TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C


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    PDF 24PIN6117 CXK5818PN/M-10 CXK5818PN/M-10L CXK5818PN/M-180 LH5117-10 LH5118-15 LH5118-20 LH5118-10 M5M5117P M5M5117P-12 HM6117HLP-70 LH5117-15 lh5117 HM6117LP-4 LH5117-20 M5M5118P-12 HM6117LP-3

    LH5911

    Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


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    PDF LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 2,048 • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 (iW (MAX.) x 8 bit organization • Single +5 V power supply • Fully-static operation • TTL compatible I/O • Three-state outputs • • Wide temperature range available


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    PDF LH5118 LH5118 LH5118H 24-pin, 600-mil 300-mil

    LHS168

    Abstract: LH52252A LH52252
    Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j


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    PDF LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252