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    LH5116H Price and Stock

    Sharp Microelectronics of the Americas LH5116HD-10

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics LH5116HD-10 1,440
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    Quest Components LH5116HD-10 223
    • 1 $9.75
    • 10 $9.75
    • 100 $4.225
    • 1000 $3.9
    • 10000 $3.9
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    Sharp Microelectronics of the Americas LH5116HN-10T

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics LH5116HN-10T 950 2
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    • 10 $2.576
    • 100 $1.2022
    • 1000 $1.0562
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    Quest Components LH5116HN-10T 5,463
    • 1 $3.324
    • 10 $3.324
    • 100 $3.324
    • 1000 $1.2465
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    LH5116HN-10T 760
    • 1 $3.45
    • 10 $3.45
    • 100 $3.45
    • 1000 $1.495
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    Sharp Microelectronics of the Americas LH5116HN-10

    IC,SRAM,2KX8,CMOS,SOP,24PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LH5116HN-10 26
    • 1 $7.77
    • 10 $3.885
    • 100 $3.885
    • 1000 $3.885
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    Sharp Microelectronics of the Americas LH5116HN10

    CMOS 16K (2K X 8) STATIC RAM Standard SRAM, 2KX8, 100ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA LH5116HN10 761
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    LH5116H Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5116H Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116-H Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116H10 Sharp 16K Slow SRAM (95K) Original PDF
    LH5116H-10 Sharp CMOS 16K (2K x 8)static RAM Original PDF
    LH5116H-10 Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116H-10 Sharp CMOS 16K (2K x 8) Static RAM Scan PDF
    LH5116H-10F Sharp IC SRAM CHIP ASYNC SINGLE 5V 16KBIT 2KX8 100NS 24SK-DIP Original PDF
    LH5116HD Sharp 16K Slow SRAM (95K) Original PDF
    LH5116HD-10 Sharp CMOS 16K (2K x 8)static RAM Original PDF
    LH5116HD-10 Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116HD-10 Sharp CMOS 16K (2K x 8) Static RAM Scan PDF
    LH5116HD-10F Sharp IC SRAM CHIP ASYNC SINGLE 5V 16KBIT 2KX8 100NS 24SK-DIP Original PDF
    LH5116HN Sharp 16K Slow SRAM (95K) Original PDF
    LH5116HN-10 Sharp CMOS 16K (2K x 8)static RAM Original PDF
    LH5116HN-10 Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116HN-10 Sharp CMOS 16K (2K x 8) Static RAM Scan PDF
    LH5116HN-10F Sharp IC SRAM CHIP ASYNC SINGLE 5V 16KBIT 2KX8 100NS 24SOP Original PDF

    LH5116H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116H-10F Flash Memory 16K Static RAM Model Number: LH5116H4 Spec. Issue Date: October 8, 2004 Spec No: EL16X050 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH5116H-10F LH5116H4) EL16X050

    13B1

    Abstract: LH5116H-10F
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116H-10F 16K Static RAM Model Number: LH5116H4 Spec. Issue Date: October 8, 2004 Spec No: EL16X050 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH5116H-10F LH5116H4) EL16X050 13B1 LH5116H-10F

    LH28F640BFHE-PBTLDY

    Abstract: lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10
    Text: Product Change Notice PCN : Lead (Pb)–free Packages October 15, 2004 This document updates PCN: ST-03-Z-06E issued January 23, 2004. Objective: Existing Memory ICs are changing from a lead (Pb) process to a lead-free process. Process Change Key Points 1) SHARP is changing the lead plating process from lead (Pb) to lead-free to meet the demands


    Original     		PDF ST-03-Z-06E connectiH5116D-10F LH5116H-10F LH5116NA-10F LH5164A-10LF LH5164AD-10LF LH5164AHN-10LF LH516AN0 LH28F640BFHE-PBTLDY lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10

    5116 ram

    Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN 5116 ram LH5116H DIP024-P-0600 SOP024-P-0450B 0450b

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN LH5116H

    5116 ram

    Abstract: LH5116H LH5116HN
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN 5116 ram LH5116H LH5116HN

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A


    OCR Scan     		PDF LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A

    LHS168

    Abstract: LH52252A LH52252
    Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j


    OCR Scan     		PDF LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		PDF LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-pin LH5116H

    Untitled

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).


    OCR Scan     		PDF LH5116/H LH5116/H 24-PIN Three-sP-0600) 24-pin, 300-mil DIP024-P-0300)

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


    OCR Scan     		PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    LH5160N

    Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


    OCR Scan     		PDF LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)


    OCR Scan     		PDF 24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL

    lh5116na-10

    Abstract: LH5116N
    Text: SHARP CORP blE D m LH5116 ÜOOtî t 7fl b3b «SRPJ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mi 450-mi 24-PIN lh5116na-10 LH5116N

    LH5911

    Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


    OCR Scan     		PDF LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl

    0450B

    Abstract: 5116d
    Text: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).


    OCR Scan     		PDF LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-PIN 0450B 5116d

    lh5116na-10

    Abstract: No abstract text available
    Text: LH5116 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It features high speed access in read mode using output enable (toe).


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN lh5116na-10

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


    OCR Scan     		PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN

    LH5116N

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).


    OCR Scan     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN LH5116N

    LH521007AK-20

    Abstract: No abstract text available
    Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.


    OCR Scan     		PDF LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20