BUV48 APPLICATIONS Search Results

BUV48 APPLICATIONS Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
OMAP5910JZVL2		Texas Instruments	Applications processor
OMAP5910JGVL2		Texas Instruments	Applications processor

BUV48 APPLICATIONS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
buv48 equivalent Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854 Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	BUV48/D* BUV48/D buv48 equivalent 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854	PDF
buv48 equivalent Abstract: BUV48-D BUV48 BUV48 Applications 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	BUV48/D BUV48 BUV48A BUV48/BUV48A BUV48/D* buv48 equivalent BUV48-D BUV48 BUV48 Applications 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735	PDF
buv48 equivalent Abstract: BUV48 2N3763 MOTOROLA 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854 Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	BUV48/D BUV48 BUV48A BUV48/BUV48A BUV48/D* buv48 equivalent BUV48 2N3763 MOTOROLA 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854	PDF
mje13009 equivalent Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202	PDF
buv48 equivalent Abstract: v48A Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BU V48A SW ITCHMODE II Series NPN Silicon Pow er TVansistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS The BUV48/BUV48A transistors are designed for high-voltage, high-speed, power	OCR Scan	BUV48/BUV48A BUV48 buv48 equivalent v48A	PDF
buv48 equivalent Abstract: 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854 Contextual Info: ON Semiconductort BUV48 BUV48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated	Original	BUV48 BUV48A BUV48/BUV48A r14525 BUV48/D buv48 equivalent 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854	PDF
BUV48 Abstract: BUV48A buv48 equivalent BUV48 Applications Contextual Info: SavantIC Semiconductor Product Specification BUV48 BUV48A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING See Fig.2	Original	BUV48 BUV48A BUV48 BUV48A buv48 equivalent BUV48 Applications	PDF
BUV48V Abstract: by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904 Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE	Original	BUV48, BUV48A OT-93 BUV48 BUV48V by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904	PDF
buv48 Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • Rugged Triple-Diffused Planar Construction • 15 A Continuous Collector Current • 1000 Volt Blocking Capability AUG UST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE	OCR Scan	BUV48, BUV48A OT-93 BUV48 BUV48A	PDF
buv48 equivalent Abstract: BUV48 300V transistor npn 2a Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48 DESCRIPTION •High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such	Original	BUV48 Current-Continuo100 buv48 equivalent BUV48 300V transistor npn 2a	PDF
BUV48 SE Abstract: I v48a Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA B U V48 B UV48A S W IT C H M O D E II S e rie s NPN S ilic o n P o w e r T ra n s is to rs 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS The B U V 4 8 /B U V 4 8 A transisto rs are d e sig ned for h ig h -v o lta g e , h ig h -s p e e d , pow er	OCR Scan	BUV48/D UV48A BUV48 SE I v48a	PDF
BUV48 SE Abstract: SGSD00036 kkz 10 Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous	OCR Scan	SGS30MA050D1 250fi SGS30M SGS40TA045D: SGS400T045D O-24Q BUV48 SE SGSD00036 kkz 10	PDF
BUV48I Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a BUX47 Contextual Info: 7# SCS-THOMSON BUX47/V47/V47FI BUX47A/V47A/47AFI HIGH VOLTAGE POWER SWITCH ESCRIPTION he BUX47/A, BUV47/A, BUV47F1/AFI are silicon mltiepitaxial mesa NPN transistors mounted resoctively in TO-3 metal case, TO-218 piastic ackage and ÎSOWATT218 fully isolated package,	OCR Scan	BUX47/V47/V47FI BUX47A/V47A/47AFI BUX47/A, BUV47/A, BUV47FI/AFI O-218 SOWATT218 BUX47 BUV47 BUV48I BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a	PDF
kkz 10 Abstract: BUV48 Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO WER MOS will, in many applications, gradually re place power bipolar devices due to the numerous	OCR Scan	SGS30MA050D1 SGS40TA045D: S400T045D kkz 10 BUV48	PDF

TIC106D equivalent Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent	PDF
buv48 Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92 Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtNTfcchootog Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique	OCR Scan	15A3DIN buv48 BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92	PDF
D100E Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810 Contextual Info: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same	OCR Scan	SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 D100E ic uc3842 BUV48 SE sgsd00031 uc3842 application 600V BU508	PDF
TIC106M SCR Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent	PDF
u810 diode Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810 Contextual Info: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con	OCR Scan	SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 u810 diode diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF

BUV48 APPLICATIONS Search Results

BUV48 APPLICATIONS Result Highlights (2)

BUV48 APPLICATIONS Datasheets Context Search

buv48 equivalent

buv48 equivalent

buv48 equivalent

mje13009 equivalent

buv48 equivalent

buv48 equivalent

BUV48

BUV48V

buv48

buv48 equivalent

BUV48 SE

BUV48 SE

BUV48I

kkz 10

TIC106D equivalent

buv48

D100E

TIC106M SCR

u810 diode

MJE494

2SD669 equivalent

2SC495

2N3055

2N5631 equivalent