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    2N6438 Search Results

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    2N6438 Price and Stock

    Microchip Technology Inc 2N6438

    PNP TRANSISTOR
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    Microchip Technology Inc 2N6438 36 Weeks
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    Onlinecomponents.com 2N6438
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    VPT Components 2N6438JAN

    Trans GP BJT PNP 140V 25A 2-Pin TO-3 - Bulk (Alt: JAN2N6438)
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    VPT Components 2N6438JANTXV

    Trans GP BJT PNP 140V 25A 2-Pin TO-3 - Bulk (Alt: JANTXV2N6438)
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    VPT Components JANTX2N6438

    Trans GP BJT PNP 140V 25A 2-Pin TO-3 - Bulk (Alt: JANTX2N6438)
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    SPC Multicomp 2N6438

    Bipolar Transistor, Pnp, -120V To-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:120V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Multicomp Pro 2N6438
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    2N6438 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6438 Motorola 25A POWER TRANSISTOR PNP SILICON 120V 200W Original PDF
    2N6438 On Semiconductor Silicon PNP Transistor Original PDF
    2N6438 On Semiconductor POWER TRANSISTORS PNP SILICON - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Original PDF
    2N6438 Semelab High Power PNP Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Original PDF
    2N6438 Boca Semiconductor HIGH-POWER PNP SILICON TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6438 General Transistor Power Transistor Selection Guide Scan PDF
    2N6438 Mospec POWER TRANSISTORS(25A,200W) - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6438 Mospec High-Power PNP Silicon Transistor Scan PDF
    2N6438 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6438 Motorola European Master Selection Guide 1986 Scan PDF
    2N6438 Motorola Power Transistor Selection Guide Scan PDF
    2N6438 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6438 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6438 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6438 Unknown Transistor Replacements Scan PDF
    2N6438 Unknown Transistor Replacements Scan PDF
    2N6438 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6438 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6438 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6438 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6438 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6437

    Abstract: 2N6339 2N6341 2N6438
    Text: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


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    PDF 2N6437 2N6438 2N6339 2N6341 204AA r14525 2N6437/D 2N6437 2N6341 2N6438

    Untitled

    Abstract: No abstract text available
    Text: 2N6438+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    PDF 2N6438 Freq40M time300n

    2n6436

    Abstract: 2N6438
    Text: 2N6436 2N6437 2N6438 MECHANICAL DATA Dimensions in mm inches HIGH POWER PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION 5.08 (0.200)


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    PDF 2N6436 2N6437 2N6438 2N6438

    2N6436

    Abstract: 2N6437 2N6438
    Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    PDF 2N6436 2N6437 2N6438 O-204AA) 2N6436= 2N6436 2N6437 2N6438

    2N6436

    Abstract: 2N6437 2N6438 2N6338 2N6341
    Text: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS


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    PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N6438 2N6341

    2N6437

    Abstract: 2N6438 2N6436 2n6438a 2N6338 2N6341 power transistors
    Text: Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS


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    PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N643current 2N6438 2n6438a 2N6341 power transistors

    Untitled

    Abstract: No abstract text available
    Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    PDF 2N6436 2N6437 2N6438 O-204AA)

    2N6436

    Abstract: 2N6437 2N6438
    Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    PDF 2N6436 2N6437 2N6438 O-204AA) 2N6436 2N6437 2N6438

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


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    PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100

    2N6436

    Abstract: 2N6338 2N6341 2N6437 2N6438 MBR745 motorola mbr745
    Text: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —


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    PDF 2N6436/D 2N6436 2N6437 2N6438* 2N6438 2N6338 2N6341 2N6436/D* 2N6436 2N6341 2N6437 2N6438 MBR745 motorola mbr745

    2N6438

    Abstract: No abstract text available
    Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.


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    PDF 2N6438 2N6438

    Untitled

    Abstract: No abstract text available
    Text: 2N6438+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


    Original
    PDF 2N6438 Freq40M time300n

    Untitled

    Abstract: No abstract text available
    Text: 2N6438+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    PDF 2N6438 Freq40M time300n

    2N6438

    Abstract: No abstract text available
    Text: ISCFdÈ Lûó Lûó text/html About News keyword search: Contact Employment Site Home part number search: 2N6438 #23954 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating


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    PDF 2N6438 2N6438

    Untitled

    Abstract: No abstract text available
    Text: 2N6438 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    PDF 2N6438 Freq40M time300n

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    buv48 equivalent

    Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
    Text: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power


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    PDF BUV48/D* BUV48/D buv48 equivalent 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    High voltage fast switching power transistor pnp

    Abstract: 2N6438 2n6437
    Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —


    OCR Scan
    PDF 2N6437/D 2N6437 2N6438 2N6339 2N6341 High voltage fast switching power transistor pnp 2N6438 2n6437

    n643

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 4 36 2 N 6437 2N6438* H igh-Pow er PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifier and sw itching circuit applications. • • • •


    OCR Scan
    PDF 2N6436/D 2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* O-204AA n643

    2N6583

    Abstract: 2N6736
    Text: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469


    OCR Scan
    PDF 2N6276 2N6277 2N6278 2N6279 2N6280 2N6281 2N6314 2N6338 2N6339 2N6340 2N6583 2N6736

    2N6438

    Abstract: 2N6338 2N6340 2N6436 2N6437
    Text: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan
    PDF 2N6338 2N6340 2N6436 2N6437 2N6438 VCC-80V 2N6340

    Untitled

    Abstract: No abstract text available
    Text: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542


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    PDF 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


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    PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"