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    BUK416 Search Results

    BUK416 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK416-1000AE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK416-1000AE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK416-1000AE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-1000BE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK416-1000BE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK416-1000BE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-100AE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK416-100AE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK416-100AE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-100AE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-100BE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK416-100BE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK416-100BE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-100BE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-200AE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK416-200AE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK416-200AE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-200AE Philips Semiconductors PowerMOS transistor Scan PDF
    BUK416-200BE Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK416-200BE Unknown Shortform Datasheet & Cross References Data Short Form PDF

    BUK416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


    Original     		PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998

    transistor 45 f 122

    Abstract: buk416-100
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK416-1000AE/BE PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in


    OCR Scan     		PDF BUK416-1000AE/BE 7110fl5b BUK416 1000AE -1000BE transistor 45 f 122 buk416-100

    buk416

    Abstract: No abstract text available
    Text: N AMER PH IL IPS /DI SCRE TE bTE J> bbS3R31 0D3DM45 bOl » A P X Product Specification Philips Semiconductors BUK416-200AE/BE PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in


    OCR Scan     		PDF bbS3R31 0D3DM45 BUK416-200AE/BE OT227B BUK416 -200AE BUK416-2OO0E buk416

    BUK416-200AE

    Abstract: t7700
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT227B PIN 1 2 3 4 QUICK REFERENCE DATA SYMBOL isloi DS ON MAX. MAX. UNIT -200AE 200 63 310 0.035 -200BE 200 55 310 0.045 V A W n PARAMETER BUK416 Drain-source voltage


    OCR Scan     		PDF BUK416-200AE/BE BUK416 -200AE -200BE OT227B 8UK416-2OO0E BUK416-200AE t7700

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    BUK416-200AE

    Abstract: 200AE BUK416-200BE Transistor BO 63
    Text: blE T> N AMER P H I L I P S / DI SC R ET E • bb53T31 ÜQ3D4MS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N -ch an nel e n h an cem en t m ode field-effect p o w er transistor in IS O T O P envelo pe. T h e device is intended fo r u s e in


    OCR Scan     		PDF BUK416-200AE/BE OT227B BUK416 -200AE -200BE bbS3131 D0B0411 BUK416-2QO0E BUK416-200AE 200AE BUK416-200BE Transistor BO 63

    BUK416-1OOAE

    Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK416-100AE/BE BUK416 -100AE -100BE OT227B BUK416-1OOAE/BE BUK416-1OOAE BUK416-100BE BUK416-100AE transistor 136 138 140

    BUK416-100AE

    Abstract: BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH
    Text: PHILIPS INTERNATIONAL bSE D H 7110SBb 00b3fl7b DAT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in


    OCR Scan     		PDF 7110SBb 00b3fl7b BUK416-100AE/BE OT227B BUK416 -100AE -100BE BUK416-1OOAE/BE BUK41B-100//E BUK416-100AE BUK416-100BE BUK416-100AE,BE buk418 BUK416-1OOAE transistor 2TH

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    BUK416-100AE

    Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
    Text: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in


    OCR Scan     		PDF G03D440 BUK416-1OOAE/BE OT227B BUK416 bb53R31 BUK416-1OO0E BUK416-100AE YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x

    buk418

    Abstract: BUK416-200AE lola BUK416-200BE 200AE
    Text: PHILIPS INTERNATIONAL LSE D • 7110A2b DDb3fifil 447 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISO TO P envelope. The device is intended for use in


    OCR Scan     		PDF 7110A2b BUK416-200AE/BE OT227B BUK416 -200AE 200BE BUK41B-S0ME buk418 BUK416-200AE lola BUK416-200BE 200AE

    Untitled

    Abstract: No abstract text available
    Text: N AflER P H ILIP S /D IS C R E T E bRE V • bb53R31 0 0 30 4 4 0 DET H A P X Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISO TO P envelope. The device is intended for use in


    OCR Scan     		PDF bb53R31 OT227B BUK416 -100AE -100BE BUK416-1OOAE/BE bbS3R31

    transistor 45 f 122

    Abstract: BUK416-1000AE K416 K4161 BUK416-1000BE
    Text: P h ilip s C o m p o n e n ts Data sheet status Prelim inary specification date of issue March 1991 BU K416-10OOAE/BE PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in ISO TO P envelope.


    OCR Scan     		PDF BUK416-1000AE/BE BUK416 -1000AE -1000BE OT227B 0445M4 transistor 45 f 122 BUK416-1000AE K416 K4161 BUK416-1000BE

    d 434 mosfet

    Abstract: T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606
    Text: P hilip s S e m ico n d u cto rs Index PowerMOS Transistors including TOPFETs and IGBTs ¡PAGE | TYPE NUMBER |TECHNOLOGY ENVELOPE BUK100-50DL TOPFET T0220AB 24 BUK100-50GL TOPFET T0220AB 32 BUK100-50GS TOPFET T0220AB 41 BUK101-50DL TOPFET T0220AB 50 BUK101-50GL


    OCR Scan     		PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L d 434 mosfet T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606

    BUK417-500B

    Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
    Text: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263


    OCR Scan     		PDF T0220AB OT186 OT186 BUK856-400IZ BUK417-500B TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide