10N170
Abstract: BiMOSFET
Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N170
728B1
123B1
728B1
065B1
10N170
BiMOSFET
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752 J 1600 V CAPACITOR
Abstract: 16N170 BiMOSFET
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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16N170
O-268
O-247
752 J 1600 V CAPACITOR
16N170
BiMOSFET
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IXBL64N250
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBL64N250
IC110
64N250
5-10-A
IXBL64N250
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IXBF20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF20N300
20N300
1-23-09-A
IXBF20N300
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IXBX64N250
Abstract: IC100 IXBK64N250 PLUS247
Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBK64N250
IXBX64N250
IC110
O-264
IC100
64N250
5-10-A
IXBX64N250
IC100
IXBK64N250
PLUS247
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Untitled
Abstract: No abstract text available
Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400
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OCR Scan
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40N140
40N160
O-247
40N160
D-68623
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF15N300C
IC110
15N300C
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g4 pc 50 w
Abstract: G2 - 395
Text: Advance Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC90 = 12A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions
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MMIX4B12N300
12N300
1-23-09-A
g4 pc 50 w
G2 - 395
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IXBK55N300
Abstract: IXBX 55N300 IXBX55N300
Text: IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBK55N300
IXBX55N300
IC110
O-264
IC110
PLUS247
100ms
IXBX 55N300
IXBX55N300
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Untitled
Abstract: No abstract text available
Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES
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9N160G
O-247
9-140/160G
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IC110
IXBH20N300
IXBT20N300
O-247
20N300
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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IXBT20N300HV
IC110
O-268
20N300
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C9014
Abstract: 42N170 84ae
Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V = 75 A IC25 VCE sat = 3.6 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V
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42N170
C9014
42N170
84ae
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IXBH16N170
Abstract: 16N170 IXBT16N170
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBH16N170
IXBT16N170
O-247
16N170
IXBH16N170
IXBT16N170
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25N250
Abstract: IXBX25N250
Text: Preliminary Technical Information IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V PLUS247TM (IXBX) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBX25N250
PLUS247TM
25N250
IXBX25N250
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PDF
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MMIX4B20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings
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Original
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MMIX4B20N300
IC110
IC110
MMIX4B20N300
6-05-12-B
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH10N300 VCES = 3000V IC110 = 10A VCE sat 3.2V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M
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Original
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IXBH10N300
IC110
O-247
100ms
10N300
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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IXBF20N300
IC110
IC110
50/60Hz,
20N300
6-05-12-B
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PDF
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42N170
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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42N170
42N170
O-268
O-247
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PDF
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IXBF12N300
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBF12N300
IC110
IC110
50/60Hz,
12N300
6-07-12-B
IXBF12N300
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PDF
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smd diode 819
Abstract: 16N170A mos 1200v to-247
Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20
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16N170A
728B1
123B1
728B1
065B1
smd diode 819
16N170A
mos 1200v to-247
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PDF
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Untitled
Abstract: No abstract text available
Text: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C
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9N160
9-140/160G
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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IXBH6N170
IXBT6N170
O-247
6N170
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor Extended FBSOA VCES = 2500V IC110 = 36A VCE sat ≤ 3.3V IXCH36N250 IXCK36N250 TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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IC110
IXCH36N250
IXCK36N250
O-247
O-264
100ms
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PDF
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