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    IXBK64N250 Search Results

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    IXBK64N250 Price and Stock

    IXYS Corporation IXBK64N250

    BIMOSFET 2500V 75A MONO TO-264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBK64N250 Tube 176 1
    • 1 $145.03
    • 10 $145.03
    • 100 $128.5312
    • 1000 $128.5312
    • 10000 $128.5312
    		Buy Now
    Mouser Electronics IXBK64N250 79
    • 1 $144.98
    • 10 $143.3
    • 100 $128.53
    • 1000 $128.53
    • 10000 $128.53
    		Buy Now
    Future Electronics IXBK64N250 Tube 44 Weeks 300
    • 1 -
    • 10 -
    • 100 $126.01
    • 1000 $126.01
    • 10000 $126.01
    		Buy Now
    TTI IXBK64N250 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $171.38
    • 10000 $171.38
    		Buy Now
    TME IXBK64N250 1
    • 1 $173.71
    • 10 $145.63
    • 100 $140.43
    • 1000 $140.43
    • 10000 $140.43
    		Get Quote
    New Advantage Corporation IXBK64N250 20 1
    • 1 $308.64
    • 10 $308.64
    • 100 $288.06
    • 1000 $288.06
    • 10000 $288.06
    		Buy Now

    Littelfuse Inc IXBK64N250

    Disc Igbt Bimsft-Veryhivolt To-264(3)/ Tube |Littelfuse IXBK64N250
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBK64N250 Bulk 300
    • 1 -
    • 10 -
    • 100 $134.7
    • 1000 $134.7
    • 10000 $134.7
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    RS IXBK64N250 Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $198.8
    • 1000 $198.8
    • 10000 $198.8
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    IXBK64N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBK64N250 IXYS BIMOSFET 2500V 75A MONO TO-247AD Original PDF

    IXBK64N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXBX64N250

    Abstract: IC100 IXBK64N250 PLUS247
    Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 5-10-A IXBX64N250 IC100 IXBK64N250 PLUS247

    IXBX64N250

    Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a
    Text: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500


    Original     		PDF IXBK64N250 IXBX64N250 O-264 IC110 PLUS247TM 64N250 IXBX64N250 IXBK64N250 64N250 IXBX 64N250 PLUS247 128a

    64n250

    Abstract: No abstract text available
    Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 8-12-11B

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK64N250 IXBX64N250 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXBK64N250 IXBX64N250 O-264 IC100 64N250 8-12-11B

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250