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    IXBH2N250 Search Results

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    IXBH2N250 Price and Stock

    IXYS Corporation IXBH2N250

    IGBT 2500V 5A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH2N250 Tube 162 1
    • 1 $25.94
    • 10 $25.94
    • 100 $18.12733
    • 1000 $18.12733
    • 10000 $18.12733
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    Mouser Electronics IXBH2N250 12
    • 1 $24.89
    • 10 $24.88
    • 100 $18.12
    • 1000 $18.12
    • 10000 $18.12
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    Future Electronics IXBH2N250 Tube 35 Weeks 30
    • 1 -
    • 10 -
    • 100 $17.77
    • 1000 $17.77
    • 10000 $17.77
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    TTI IXBH2N250 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $24.17
    • 10000 $24.17
    Buy Now

    Littelfuse Inc IXBH2N250

    Disc Igbt Bimsft-Veryhivolt To-247Ad/ Tube |Littelfuse IXBH2N250
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBH2N250 Bulk 300
    • 1 -
    • 10 -
    • 100 $19
    • 1000 $19
    • 10000 $19
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    RS IXBH2N250 Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $28.04
    • 1000 $28.04
    • 10000 $28.04
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    IXYS Integrated Circuits Division IXBH2N250

    IGBT DIS.DIODE SINGLE 2A 2500V BIMOSFET TO247 THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBH2N250
    • 1 $31.64225
    • 10 $31.64225
    • 100 $29.5722
    • 1000 $29.5722
    • 10000 $29.5722
    Get Quote

    IXBH2N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBH2N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 5A 32W TO247 Original PDF

    IXBH2N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXBT2N250

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM VCES = 2500V IC110 = 2A VCE sat ≤ 3.50V IXBH2N250 IXBT2N250 Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IC110 IXBH2N250 IXBT2N250 O-247 2N250 IXBT2N250

    IXBH2N250

    Abstract: IXBT2N250 2N250
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM IXBH2N250 IXBT2N250 VCES = 2500V IC110 = 2A VCE sat ≤ 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IXBH2N250 IXBT2N250 IC110 O-247 2N250 IXBH2N250 IXBT2N250

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original
    PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original
    PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250