MMIX4B12N300 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
g4 pc 50 w Abstract: G2 - 395 Text: Advance Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC90 = 12A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions	Original	PDF	MMIX4B12N300 12N300 1-23-09-A g4 pc 50 w G2 - 395
Untitled Abstract: No abstract text available Text: Preliminary Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC110 = 11A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol	Original	PDF	MMIX4B12N300 IC110 IC110 MMIX4B12N300 6-07-12-B
Untitled Abstract: No abstract text available Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B12N300 C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC110 = 11A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol	Original	PDF	MMIX4B12N300 IC110 MMIX4B12N300 6-07-12-B
mini inductances Abstract: DMA90U1800LB MMIX1F44N100Q3 MMIX4B20N300 Text: IXYSPOWER P R O D U C T B R I E F Surface Mount Power Device SMPD and Mini SMPD Packages Lighter weight, more power(ultra-low proﬁle, energy eﬃcient, and rugged) January 2013 SMPD-X SMPD OVERVIEW IXYS introduces a new packaging technology – the Surface Mount Power Device (SMPD)	Original	PDF	OT-227 O-264 PLUS247 mini inductances DMA90U1800LB MMIX1F44N100Q3 MMIX4B20N300