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    10N170 Search Results

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    10N170 Price and Stock

    IXYS Corporation IXYH10N170C

    IGBT 1700V 36A TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH10N170C Tube 815 1
    • 1 $9.6
    • 10 $9.6
    • 100 $5.66033
    • 1000 $4.36163
    • 10000 $4.36163
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    Mouser Electronics IXYH10N170C
    • 1 $8.29
    • 10 $7.68
    • 100 $5.17
    • 1000 $4.36
    • 10000 $4.36
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    Bristol Electronics IXYH10N170C 30
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    TTI IXYH10N170C Tube 300
    • 1 -
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    • 1000 $4.3
    • 10000 $4.3
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    TME IXYH10N170C 1
    • 1 $9.69
    • 10 $7.72
    • 100 $6.93
    • 1000 $6.93
    • 10000 $6.93
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    IXYS Corporation IXYH10N170CV1

    IGBT 1700V 36A TO-247
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    DigiKey IXYH10N170CV1 Tube 355 1
    • 1 $11.59
    • 10 $11.59
    • 100 $6.94467
    • 1000 $5.58325
    • 10000 $5.58325
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    Mouser Electronics IXYH10N170CV1 438
    • 1 $10.01
    • 10 $9.05
    • 100 $6.31
    • 1000 $5.58
    • 10000 $5.58
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    TTI IXYH10N170CV1 Tube 300
    • 1 -
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    • 1000 $5.45
    • 10000 $5.45
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    TME IXYH10N170CV1 1
    • 1 $12.93
    • 10 $10.36
    • 100 $9.32
    • 1000 $9.32
    • 10000 $9.32
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    IXYS Corporation IXBH10N170

    IGBT 1700V 20A TO-247AD
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    DigiKey IXBH10N170 Tube 262 1
    • 1 $11.35
    • 10 $11.35
    • 100 $6.78533
    • 1000 $5.42975
    • 10000 $5.42975
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    Mouser Electronics IXBH10N170 238
    • 1 $10.55
    • 10 $9.72
    • 100 $6.79
    • 1000 $5.42
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    TTI IXBH10N170 Tube 300 30
    • 1 -
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    • 100 $6.3
    • 1000 $5.37
    • 10000 $5.37
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    TME IXBH10N170 27 1
    • 1 $9.39
    • 10 $9.39
    • 100 $7.64
    • 1000 $7.32
    • 10000 $7.32
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    New Advantage Corporation IXBH10N170 34 1
    • 1 -
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    • 100 $14.21
    • 1000 $14.21
    • 10000 $14.21
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    IXYS Corporation IXGT10N170

    IGBT NPT 1700V 20A TO-268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT10N170 Tube 210 1
    • 1 $15.22
    • 10 $15.22
    • 100 $9.33667
    • 1000 $7.95363
    • 10000 $7.95363
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    Mouser Electronics IXGT10N170 697
    • 1 $14.27
    • 10 $13.37
    • 100 $9.34
    • 1000 $8.04
    • 10000 $8.04
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    TTI IXGT10N170 Tube 300
    • 1 -
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    • 100 -
    • 1000 $10.6
    • 10000 $10.6
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    TME IXGT10N170 1
    • 1 $8.58
    • 10 $6.82
    • 100 $6.12
    • 1000 $6.12
    • 10000 $6.12
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    IXYS Corporation IXGH10N170A

    IGBT NPT 1700V 10A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH10N170A Tube 81 1
    • 1 $8.82
    • 10 $8.82
    • 100 $5.161
    • 1000 $3.89863
    • 10000 $3.89863
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    Mouser Electronics IXGH10N170A 6
    • 1 $8.82
    • 10 $7.22
    • 100 $5.87
    • 1000 $5.27
    • 10000 $5.27
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    TTI IXGH10N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.2
    • 10000 $5.2
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    TME IXGH10N170A 35 1
    • 1 $7.31
    • 10 $5.81
    • 100 $5.42
    • 1000 $5.42
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    10N170 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    10N170

    Abstract: BiMOSFET
    Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 728B1 123B1 728B1 065B1 10N170 BiMOSFET PDF

    10N170

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		10N170 O-247 O-268 728B1 PDF

    ge motor 752

    Abstract: 10N170A 1 0 9 R
    Text: IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 123B1 728B1 065B1 10N170A ge motor 752 1 0 9 R PDF

    10N170A

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 PDF

    10N170

    Abstract: No abstract text available
    Text: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 10N170 O-268 O-247 728B1 123B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		10N170A 728B1 123B1 728B1 065B1 10N170A PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N170 728B1 123B1 728B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		10N170 O-247 O-268 728B1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan     		9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6 PDF