Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BD937 Search Results

    BD937 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD937 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD937 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD937 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD937 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD937 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD937 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD937 Unknown Cross Reference Datasheet Scan PDF
    BD937 Unknown Transistor Replacements Scan PDF
    BD937 Unknown Transistor Replacements Scan PDF
    BD937 Philips Semiconductors Silicon Epitaxial Power Transistors Scan PDF
    BD937F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD937F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD937F Philips Semiconductors Silicon Epitaxial Power Transistors Scan PDF

    BD937 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59

    Untitled

    Abstract: No abstract text available
    Text: BD933F; BD935F BD937F; BD939F BD941F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F BD934F, BD936F, BD938F, BD940F BD942F.

    Untitled

    Abstract: No abstract text available
    Text: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD933; BD937; BD941 BD934; BD933 oo34s 003HS1S

    BD941

    Abstract: b 939 a BD933 BD934 BD937 IEC134 IC 935
    Text: BD933; 935 BD937; 939 BD941 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BD934; 936; 938; 940 and 942.


    OCR Scan     		PDF BD933; BD937; BD941 BD934; BD933 MECHANIC0034515 7Z82166 BD941 b 939 a BD934 BD937 IEC134 IC 935

    Untitled

    Abstract: No abstract text available
    Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BBS33F; 3D93Sf BD937F; BD939F BD941F 711002b OT186 BD934F, BD936F, BD938F,

    BD934

    Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
    Text: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD933; BD937 BD941 7110fl2b 0043D44 BD934; BD933 T-33-09 BD937; BD934 B0937 B0941 B0939 BD941 BD934 philips IEC134 c 939

    3BS transistor

    Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
    Text: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F 711002b 0043G52 OT186 BD934F, BD936F, 3BS transistor BD937F b0933 935F BD935 d941 BD933F BD934F

    B0937

    Abstract: b 939 a ic B0937 T3309 B0941 BD933 transistor A 935 BD934 BD937 BD941
    Text: BD933; 935 BD937; 939 BD941 PHILIPS INTERNATIONAL SbE D • 711DfiEb 0043D44 MIL ■ P H I N SILICO N EPITAXIAL B A S E PO W ER T R A N S IS T O R S 7 - 3 3 - 0 * 1 N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television


    OCR Scan     		PDF 711DfiEb BD933; BD937; BD941 BD934; BD933 T-33-09 B0937 b 939 a ic B0937 T3309 B0941 transistor A 935 BD934 BD937 BD941

    transistor BD939F

    Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
    Text: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F Q0M3052 OT186 BD934F, BD936F, BD938F, transistor BD939F d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F

    BD939F

    Abstract: 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F BD940F
    Text: BD933F; BD935F BD937F; BD939F BD941F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F- BD934F, BD936F, BD938F, BD940F BD942F. BD939F 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F

    B0938

    Abstract: B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F BD939F
    Text: BD934F; BD936F BD938F; BD940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistor in a SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD934F; BD936F BD938F; BD940F BD942F BD933F, BD935F, BD937F, BD939F B0941F. B0938 B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F