BC308 TRANSISTOR Search Results

BC308 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

BC308 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC308 Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP Contextual Info: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.	Original	BC307 BC308 BC309 BC307, BC308, BC309 BC307) BC3050MHz BC308 BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP	PDF
BC307 Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309 Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309	Original	BC307/308/309 BC309 BC307 BC308/309 BC307 bc307 pnp BC238 datasheet BC239 transistor 309 BC309	PDF
bc307 Abstract: BC308 Contextual Info: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous	Original	BC307/308/309 BC307 BC308/309 -10mA, -100mA, BC308	PDF
TYP 513 309 Abstract: GE-514 Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309	OCR Scan	BC307/308/309 BC309 BC307 BC308/309 BC307 BC3Q8/309 TYP 513 309 GE-514	PDF
BC308 Contextual Info: Transistors BC308 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Collector-Em itter Voltage VcES Collector-Emitter Voltage VcEO Emitter-Base Voltage Collector Current (DC) Collector Dissipation	OCR Scan	BC308 -10mA, 100mA, 50MHz BC308	PDF
Contextual Info: FORWARD UnEKHAUONAL ELECTRONICS LID. BC308 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS at Tamb=25'c C haracteristic Collector-Emitter Voltage Collector-Emitter Voltage B atter-B ase Voltage	OCR Scan	BC308 -10uA -10mA -100mA -10inA 50MHz	PDF
BC182 BC547 Abstract: bc557 TO92C Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328	OCR Scan	BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC182 BC547 bc557 TO92C	PDF
BC307B Abstract: BC307 BC307C 308C BC308 BC308C Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage	Original	BC307. BC308 BC307B BC308C BC307 100MHz 200Hz BC307C 308C BC308 BC308C	PDF
BC307 Abstract: BC308 PNP transistor download datasheet BC308 Contextual Info: BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30	Original	BC307. BC308 BC307 BC307 BC308 PNP transistor download datasheet BC308	PDF
BC307B Abstract: BC307 BC308C 308C BC307C BC308 Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage	Original	BC307. BC308 BC307B BC308C BC307B BC307C BC307 100MHz 200Hz BC308C 308C BC308	PDF
BC307B Abstract: BC307 BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage	Original	BC307. BC308 BC307B BC308C BC307 100MHz 200Hz BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C	PDF
Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE	Original	BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961	PDF
T BC309 Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307	OCR Scan	BC307/308/309 BC309 BC307 BC308/309 T BC309	PDF
BC307 Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9	OCR Scan	BC307/308/309 BC309 BC307 BC308/309 BC307	PDF

BC307 Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).	OCR Scan	BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary	PDF
bc307 Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N	Original	BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary	PDF
BC307 Abstract: BC308 BC309 BC308 PNP transistor Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)	OCR Scan	BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 BC308 PNP transistor	PDF
bc307 Abstract: BC308 BC307 complementary Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).	Original	BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 complementary	PDF
BC308A Abstract: Transistor BC 308C BC307 Bc308 Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage	Original	BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307	PDF
transistor BC 458 Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308 Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage	Original	BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309	PDF
BC307 Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237 Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).	Original	BC307/8/9 BC307 BC309 BC237/238/239. BC307 BC308 BC309 BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 bc3078 BC237	PDF
bc307 Abstract: BC309 BC308 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter	Original	BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc307 BC309 BC308	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol	Original	BC307/308/309 BC307 BC308/309 -55-150cy -10mA, -100mA,	PDF
bc308 Abstract: BC307 BC309 Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol	Original	BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc308 BC307 BC309	PDF

BC308 TRANSISTOR Search Results

BC308 TRANSISTOR Result Highlights (5)

BC308 TRANSISTOR Datasheets Context Search

BC308

BC307

bc307

TYP 513 309

BC308

BC182 BC547

BC307B

BC307

BC307B

BC307B

T BC309

BC307

BC307

bc307

BC307

bc307

BC308A

transistor BC 458

BC307

bc307

bc308