TO92C Search Results

Contextual Info: Circuit Protector Elements UNH0013 Circuit Protector Elements Unit: mm For overcurrent protection • Absolute Maximum Ratings Ta = 25°C Symbol Operating ambient temperature Storage temperature Unit Topr −55 to +125 °C Tstg −55 to +125 °C ■ Electrical Characteristics Ta = 25°C ± 3°C

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

10h125

Abstract: HDR2X25 Transistor 6C5 DSUB25ST 10h125_plcc BERG 40 pin single row header housing bt.656 interface PLCC-44 molex CCIR-656 HMP8154
Contextual Info: The HMP8154EVAL1 Encoder Evaluation Platform Semiconductor Application Note July 1997 AN9743 Author: Steven Martin Features board includes an encoder, voltage references and decoupling, analog output filters, and I/O connectors. • HMP8154 Video Encoder • Digital Parallel ITU-R BT.656 Input

unh0005

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Circuit Protector Elements UNH0005 Circuit Protector Elements Unit: mm For overcurrent protection • Absolute Maximum Ratings Ta = 25°C Storage temperature Rating Unit Topr −55 to +125 °C

Contextual Info: Circuit Protector Elements UNH0008 Circuit Protector Elements Unit: mm For overcurrent protection 5.1±0.2 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C 0.45+0.15 –0.1 Symbol Rating Unit Operating ambient temperature Topr −55 to +125 °C −55 to +125

Contextual Info: Rev.4.0_00 SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR S-817 Series The S-817 Series is a 3-terminal positive voltage regulator, developed using CMOS technology. Small ceramic capacitors can be used as the output capacitor, and the S-817 series provides stable

S-80845CLY

Abstract: s80845cl S-80818CLUA 80846 SC-82AB S-80828CNY S-80810CNNB-B9OT2x S-80820CNNB-B8F-T2 s80851CL 80827CN
Contextual Info: S-808xxC Series www.sii-ic.com SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Rev.5.0_00 Seiko Instruments Inc., 2001-2010 The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS

H0009

Abstract: UNH0009
Contextual Info: Circuit Protector Elements UNH0009 Circuit Protector Elements Unit: mm For overcurrent protection • Absolute Maximum Ratings Ta = 25°C Rating Unit Operating ambient temperature Topr −55 to +125 °C Storage temperature Tstg −55 to +125 °C ■ Electrical Characteristics Ta = 25°C ± 3°C

10h125

Abstract: equivalent transistor 2n3704 Transistor 6C5 bt.656 parallel connector amphenol c16 to92c t93ya 0X00 CCIR-656 HMP8154
Contextual Info: The HMP8154EVAL1 Encoder Evaluation Platform TM Application Note July 1997 AN9743 Author: Steven Martin Features • HMP8154 Video Encoder board includes an encoder, voltage references and decoupling, analog output filters, and I/O connectors. • Digital Parallel ITU-R BT.656 Input

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

to92c

Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 High Voltage Transistors Typ e M axim um Ratings N=NPN P=PNP BF420 BF421 BF422 BF423 BFP22 BFP23 BFP25 BFP26 N P N P N P N P V CEO V 'c m.\ Pt mW 300 300 250 250 200 200 300 300 50

BF311

Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350

817b 4 pin ic APPLICATION

Abstract: 817b 4 pin ic 817A transistor 817a
Contextual Info: Rev.2.6_00 SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR S-817 Series The S-817 Series is an ultra compact 3-Pin positive voltage regulator developed using CMOS technology. Housing into a miniaturized 2.0 x 2.1 mm SC-82AB package, the S-817 offers key advantages for small,

DIN 6784

Abstract: P-SOT89-4 P-SOT89-4-1 TO-92-E6288 P-SOT-323 P-TO251-3-1 marking 032 P-TO-263-3-1 P-TO218-AA
Contextual Info: Gehäusemassbilder Packages Outlines P-DSO-8-6/-7 Approx. weight 0.15 g 1.27 0.1 0.41 +0.1 -0.05 1 P-DSO-8-3, -6, -7 0.2 M 8 5 1 4 +0.05 -0.01 0.2 C 8˚ MAX. 4 -0.2 1 1.75 MAX. 0.1 MIN. 1.5) 0.33 ±0.08 x 45˚ 0.64 ±0.25 8x AC 6 ±0.2 A 5 -0.2 1) Index Marking (Chamfer)

80846

Abstract: B6U 205 B9D TRANSISTOR S-80858CNY-x S-80808CNNB-B9M-T2 S-80809CNNB-B9N-T2 SC-82AB S-80818CLNB-B6D-T2 S-80813CLNB S-80827CNMC-B8M-T2
Contextual Info: Rev.3.2_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-808xxC Series The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS

transistor BC 584

Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4

BC584

Abstract: BC456 BCY85 BC586 BC585 BF394 BFX50 BC583 BC451 BC452
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. >• K CASE < _i O a. M A X IM U M R A T IN G S Pd mW •c (m A) V C E (S A T ) h fe V C EO (V ) min max 'c (mA) V CE (V ) max (V ) f Cob N.F. 'c (mA) T min max max (MHz) (pF) (dB) 200+ 100 100 100 2.7 +

817b 4 pin ic

Abstract: ic 817b 817b 817A 817A17APF-CUGTFG S B 817 S-817 SC-82AB 1V-10V
Contextual Info: Rev.3.0_00 SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR S-817 Series The S-817 Series is a 3-terminal positive voltage regulator, developed using CMOS technology. Small ceramic capacitors can be used as the output capacitor, and the S-817 series provides stable

S-812C50BUC-C5ET2x

Abstract: S-812C33AMC-C2NT2x 812C50A 812C30A S-812C S-812C33BUC-C4N-T2 812C60 YZ003-C-Z-SD C3ET 812C
Contextual Info: S-812C 系列 高耐压 CMOS 电压稳压器 www.sii-ic.com Rev.5.0_00 Seiko Instruments Inc., 2001-2010 S-812C 系列是使用 CMOS 技术开发的高耐压电压稳压器。最大工作电压为 16 V 的高电压，因此最适用于需 要耐压的应用电路。此外，不仅消耗电流小而且还内置电源开/关控制电路，最适合在低消耗电力的携带设备上

s80845cl

Abstract: SC-82AB S-80840 S-80824 S-80826CNPF S-80836CNy s80846cly s-80845cly S-80824CLNB-B6JT2x
Contextual Info: S-808xxC シリーズ 超小型 www.sii-ic.com 高精度電圧検出器 Rev.5.0_00 Seiko Instruments Inc., 2001-2010 S-808xxC シリーズはCMOS プロセスを使用して開発した、高精度電圧検出 IC です。検出電圧は内部で固

H0006

Abstract: UNH0006 thermal fuse symbol
Contextual Info: Circuit Protector Elements UNH0006 Circuit Protector Elements Unit: mm For overcurrent protection M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Operating ambient temperature Topr −55 to +125 °C Storage temperature

UNH0003

Contextual Info: Circuit Protector Elements UNH0003 Circuit Protector Elements Unit: mm For overcurrent protection M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 0.7±0.1 12.9±0.5 ue pl d in an c se ed lud pl vi an m m es

H0013

Abstract: UNH0013
Contextual Info: Circuit Protector Elements UNH0013 Circuit Protector Elements Unit: mm For overcurrent protection M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Operating ambient temperature Topr −55 to +125 °C Storage temperature

MPS6539

Abstract: BF224 BF369 bf 182 bf310
Contextual Info: RF-IF High Frequency Transistors M A X IM U M R A T IN G S TY PE NO. PO LA ­ R IT Y CASE m W (raA ) VcEO vv CBO* (V ) Pd Ic H FE ^CE(sat) m in m ax Ic (m A ) ^CE (V ) fT C 0b r* * '-'re N .F . m ax (p F ) m ax (d B ) (V ) (m A ) m in (M H z ) 0.3 0.95