BC308 PNP TRANSISTOR Search Results

BC308

Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP
Contextual Info: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

BC307

Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309
Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309

bc307

Abstract: BC308
Contextual Info: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous

TYP 513 309

Abstract: GE-514
Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309

Contextual Info: FORWARD UnEKHAUONAL ELECTRONICS LID. BC308 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS at Tamb=25'c C haracteristic Collector-Emitter Voltage Collector-Emitter Voltage B atter-B ase Voltage

BC307B

Abstract: BC307 BC307C 308C BC308 BC308C
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage

BC307

Abstract: BC308 PNP transistor download datasheet BC308
Contextual Info: BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30

BC307B

Abstract: BC307 BC308C 308C BC307C BC308
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage

BC307B

Abstract: BC307 BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage

BC182 BC547

Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

T BC309

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307

BC307

Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9

transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

BC307

Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).

bc307

Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N

BC307

Abstract: BC308 BC309 BC308 PNP transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)

bc307

Abstract: BC308 BC307 complementary
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).

BC307

Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).

bc307

Abstract: BC309 BC308
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol

bc308

Abstract: BC307 BC309
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol

bc307bta

Abstract: BC307
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

BC307

Abstract: BC308 BC308 PNP transistor BC309 309 IC
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage