AS7C5 Search Results

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: March 2001 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513 5V version • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

Contextual Info: December 2003 AS7C513B 5V 32Kx16 CMOS SRAM Features • Compatible to AS7C513A • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

AS7C1026

Abstract: AS7C3513 AS7C4098 AS7C513 13-10TC
Contextual Info: AS7C513 AS7C3513 A 1 5V/3.3V 32Kx 16 CMOS SRAM Features • O rg an izatio n : 3 2 ,7 6 8 w o rd s X 16 bits • H ig h speed - 1 0 / 1 2 / 1 5 / 2 0 ns ad d ress access tim e - 5 / 6 / 8 / 1 0 ns o u tp u t en ab le access tim e • Low p o w e r c o n su m p tio n

AS7C512-20JC

Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
Contextual Info: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O

6846

Abstract: AS7C3513 AS7C3513-12 AS7C513 AS7C513-12 oh140
Contextual Info: 2&72% 5#4<<<# $6:&846 $6:&6846 8926169#65.ð49#&026#65$0 # HDWXUHV • Low power consumption: STANDBY - 28 mW (AS7C513) / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

Contextual Info: AS7C513 AS7C3513 5V/3.3V 32Kx 16 CMOS SRAM Features • O i g a n i z a t b n : 3 2 ,7 68 w o i r is x 1 6 b i t s • TTL -com p a t b i e , t h ie e - s t a i e 1/0 • H ig h g p e a d • 4 4 - p i n ÆDEC s ta n d a id p a c k a g e - 1 0 / 1 2 /1 5 / 2 0 n s a d d ie s s access tin e

Contextual Info: High Performance 64KX8 CMOS SRAM AS7C512 AS7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption

Contextual Info: June 2001 Preliminary Information AS7C513A AS7C3513A 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513A 5V version • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins

Contextual Info: AS7C512 5V 6 4K x8 C M O S SRAM Features • O rganization: 6 5 ,5 3 6 w ords X 8 bits • H igh speed - 1 5 /2 0 /2 5 ns address access tim e - 4 / 5 / 6 ns o utput enable access tim e • Low po w er consum ption - Active: 632 m W m ax 15 ns cycle - Standby: 27.5 m W max, CMOS I/O

Contextual Info: High Performance AS7C513 A S7C 3513 32KX16 CMOS SRAM A 3 2 K X 1 6 CM O S SRAM Advance information Features • Organization: 32,768 words x 16 bits • High speed - 1 2 / 1 5 / 2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low power consumption

AS7C512-20JC

Abstract: AS7C512-15PC VLN 2003 7C256 AS7C512
Contextual Info: AS7C512 5V 64K x8 CMOS SRAM 1Equal access and cycle tim es 1Easy m em ory expansion w ith CE1, CE2, OE inputs 1TTL-compatible, three-state I/O - 3 2-pin JEDEC standard packages - 300 m il PDIP and SOJ Socket com patible w ith 7C256 and 7C1024 1ESD p rotection > 2000 volts

AS7C513C

Contextual Info: September 2006 Advance Information AS7C513C 5 V 32K X 16 CMOS SRAM Features • JEDEC standard packaging - 44-pin 400 mil SOJ - 44-pin TSOP 2 • ESD protection ≥ 2000 volts Pin arrangement A6 A7 I/O0–I/O7 I/O8–I/O15 Control circuit Address decoder

Contextual Info: H igh Perform ance 32K X16 CMOS SRAM AS7C513 AS7C3513 3 2 K x 16 CMOS SRAM Advance information • Organization: 32,768 w ords x 16 bits • High speed - 1 2 /1 5 /2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low pow er consumption

018U

Abstract: AS7C5
Contextual Info: October 2003 AS7C513B 5V 32Kx16 CMOS SRAM Features • Compatible to AS7C513A • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

TAA 621 applications

Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
Contextual Info: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption

AS7C512-20JC

Abstract: AS7C512 AS7C512-15pc transistor sb 772 AS7C512-12JC AS7C512L-20JC ES 95 SB Plastic 32-pin 300 mil SOIC 7C256 AS7C512-12PC
Contextual Info: High Performance 64Kx8 CMOS SRAM AS7C512 AS7C512L 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • High speed - 12/15/20/25/35 ns address access time - 3/4/5/6/8 ns output enable access time • Low power consumption - Active: 688 mW max 12 ns cycle

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM • • • • • • AS7C513 5V version AS7C3513 (3.3V version) Industrial and commercial temperature Organization: 32,768 words × 16 bits Center power and ground pins High speed - 12/15/20 ns address access time

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • Low power consumption: STANDBY - 28 mW AS7C513 / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

AS7C513B

Abstract: AS7C513B-10JC AS7C513B-10JI AS7C513B-10TC
Contextual Info: March 2004 AS7C513B 5V 32Kx16 CMOS SRAM Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: May 2001 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513 5V version • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

Contextual Info: AS7C513 AS7C3513 5V /3.3V 32Kx 16 CMOS SRAM Features • Organization: 3 2 ,7 6 8 w ords X 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low pow er consum ption - Active: 504 mW m ax 20 ns cycle

Contextual Info: High-Performance 64Kx8 CMOS SRAM p i AS7C512 AS7C512L 64Kx8 CMOS SRAM Common I/O FEATURES Equal access and cycle times • Organization; 65,536 words x 8 bits • Highspeed • Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

AS7C3513

Abstract: AS7C513
Contextual Info: September 2001 AS7C513 AS7C3513 Š 5V/3.3V 32Kx16 CMOS SRAM HDWXUHV • AS7C513 5V version) • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time