SI4967DY Search Results

Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition

Si4967DY

Abstract: 5A6V
Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

Si4967DY

Abstract: Si4967DY-T1-E3
Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition

Si4967DY

Contextual Info: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4967DY

Contextual Info: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4967DY

Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

Contextual Info: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage

Si4967DY

Contextual Info: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4967DY

Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2

SI4967DY

Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2

3771

Abstract: 8948 AN609 Si4967DY
Contextual Info: Si4967DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition

Si4967DY

Abstract: Si4967DY-T1
Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2

Contextual Info: SÌ4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product V p s (V» -12 RDSfOM} ( ° ) I d (A) 0.023 @ VGs = -4.5 V ±7.5 0.030 @ VGS = -2 .5 V ±6 .7 0.045 @ Vqs = -1 -8 V ±5.4 -JuA 9° ' A V* Si S2 p p SO-8 Gì “n ! 3- n ! n Di n O2 Dt

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509