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Vishay Siliconix SI4967DY-T1-E3 MOSFET 2P-CH 12V 8SOIC
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DigiKey	SI4967DY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4967DY-T1-GE3 MOSFET 2P-CH 12V 8SOIC
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DigiKey	SI4967DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4967DY-T1
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Bristol Electronics	SI4967DY-T1		2,214			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4967DY-T1		1,771			1 $2.92 10 $2.92 100 $2.92 1000 $1.095 10000 $1.095	Buy Now
	SI4967DY-T1		1,651			1 $1.825 10 $1.825 100 $1.825 1000 $0.8395 10000 $0.7665	Buy Now
Vishay Siliconix SI4967DY POWER FIELD-EFFECT TRANSISTOR, 7.5A I(D), 12V, 0.023OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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Quest Components	SI4967DY		60			1 $1.875 10 $1.875 100 $1.125 1000 $1.125 10000 $1.125	Buy Now
Vishay Intertechnologies SI4967DYT1E3 DUAL P-CHANNEL 1.8-V (G-S) MOSFET Power Field-Effect Transistor, 7.5A I(D), 12V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4967DYT1E3		160			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4967DY Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si4967DY		Unknown	Metal oxide P-channel FET, Enhancement Type		Original	PDF
Si4967DY		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
Si4967DY		Vishay Intertechnology	Dual P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI4967DY-DS		Vishay Telefunken	DS-Spice Model for Si4967DY		Original	PDF
Si4967DY SPICE Device Model		Vishay	Dual P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI4967DY-T1		Vishay Intertechnology	Dual P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI4967DY-T1		Vishay Siliconix	Dual P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI4967DY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 8SOIC		Original	PDF
SI4967DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 8SOIC		Original	PDF

SI4967DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si4967DY 2002/95/EC Si4967DY-T1-E3 Si4967DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4967DY Abstract: 5A6V Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View	Original	PDF	Si4967DY S-59633--Rev. 12-Oct-98 5A6V
Si4967DY Abstract: Si4967DY-T1-E3 Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si4967DY 2002/95/EC Si4967DY-T1-E3 Si4967DY-T1-GE3 18-Jul-08
Si4967DY Abstract: No abstract text available Text: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4967DY 18-Jul-08
Si4967DY Abstract: No abstract text available Text: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4967DY S-61927Rev. 09-Oct-06
SI4967DY Abstract: No abstract text available Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View	Original	PDF	Si4967DY S-59633--Rev. 12-Oct-98
Si4967DY Abstract: No abstract text available Text: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4967DY 25-Feb-99
SI4967DY Abstract: No abstract text available Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2	Original	PDF	Si4967DY Si4967DY-T1 08-Apr-05
SI4967DY Abstract: No abstract text available Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2	Original	PDF	Si4967DY Si4967DY-T1 18-Jul-08
3771 Abstract: 8948 AN609 Si4967DY Text: Si4967DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4967DY AN609 12-Jan-06 3771 8948
Untitled Abstract: No abstract text available Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si4967DY 2002/95/EC Si4967DY-T1-E3 Si4967DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si4967DY Abstract: Si4967DY-T1 Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2	Original	PDF	Si4967DY Si4967DY-T1 S-31989--Rev. 13-Oct-03
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	PDF	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

Untitled Abstract: No abstract text available Text: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage	OCR Scan	PDF	Si4967DY
Untitled Abstract: No abstract text available Text: SÌ4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product V p s (V» -12 RDSfOM} ( ° ) I d (A) 0.023 @ VGs = -4.5 V ±7.5 0.030 @ VGS = -2 .5 V ±6 .7 0.045 @ Vqs = -1 -8 V ±5.4 -JuA 9° ' A V* Si S2 p p SO-8 Gì “n ! 3- n ! n Di n O2 Dt	OCR Scan	PDF	4967DY S-59633-- 12-Oct-98 Si4967DY