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Sharp Microelectronics of the Americas LH521002AK-35
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	LH521002AK-35		11		2	1 - 10 $2.912 100 $2.912 1000 $2.912 10000 $2.912	Buy Now
Quest Components	LH521002AK-35		8			1 $6 10 $3 100 $3 1000 $3 10000 $3	Buy Now
Sharp Microelectronics of the Americas LH521002AK-20 IC,SRAM,256KX4,CMOS,SOJ,28PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	LH521002AK-20		4,113			1 $7.5 10 $7.5 100 $7.5 1000 $2.75 10000 $2.625	Buy Now
Sharp Microelectronics of the Americas LH521002AK-25 256K X 4 STANDARD SRAM, 25 ns, PDSO28
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	LH521002AK-25		1,648			1 $12.75 10 $12.75 100 $12.75 1000 $4.4625 10000 $4.4625	Buy Now
Sharp Microelectronics of the Americas LH521002K-25 256K X 4 STANDARD SRAM, 25 NS, PDSO28
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	LH521002K-25		100			1 $9 10 $4.5 100 $3.9 1000 $3.9 10000 $3.9	Buy Now
Sharp Microelectronics of the Americas LH521002BK-20 521002BK-20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	LH521002BK-20		32			1 $5.25 10 $2.625 100 $2.625 1000 $2.625 10000 $2.625	Buy Now

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LH521002 Datasheets (30)

Part	Manufacturer	Description	Datasheet Type	PDF
LH521002AK-17	Sharp	SRAM GP Single Port	Original	PDF
LH521002AK-20	Sharp	SRAM GP Single Port	Original	PDF
LH521002AK-25	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-17	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-17L	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-20	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-20L	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-25	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-25L	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-35	Sharp	SRAM GP Single Port	Original	PDF
LH521002BK-35L	Sharp	SRAM GP Single Port	Original	PDF
LH521002BNK-17	Sharp	SRAM GP Single Port	Original	PDF
LH521002BNK-17L	Sharp	SRAM GP Single Port	Original	PDF
LH521002BNK-20	Sharp	SRAM GP Single Port	Original	PDF

LH521002BNK-20L	Sharp	SRAM GP Single Port	Original	PDF
LH521002BNK-25	Sharp	SRAM GP Single Port	Original	PDF
LH521002BNK-25L	Sharp	SRAM GP Single Port	Original	PDF
LH521002BNK-35	Sharp	SRAM GP Single Port	Original	PDF
LH521002BNK-35L	Sharp	SRAM GP Single Port	Original	PDF
LH521002CK-17	Sharp	SRAM GP Single Port	Original	PDF

LH521002 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LH521002AK25 Abstract: No abstract text available Text: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be employed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series	Original	LH521002A LH521002A 28SOJ SOJ28-P-400) 28SOJ400 28-pin, 400-mil LH521002AK25	PDF
SOJ28-P-400 Abstract: No abstract text available Text: LH521002C CMOS 256K x 4 Static RAM Data Sheet The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained IDR under this Data Retention condition. CMOS Standby Current (ISB2) is reduced on the ‘L’ version with respect to	Original	LH521002C 2613-banchi, J63428 SMT94020 SOJ28-P-400	PDF
32-PIN Abstract: No abstract text available Text: LH521002B FEATURES • Fast Access Times: 17/20/25/35 ns • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • 2 V Data Retention L Version • Packages: 28-pin, 300-mil SOJ (Preliminary)	Original	LH521002B 28-pin, 300-mil 400-mil 28SOJ400 32-PIN	PDF
km681001j-20 Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20 Text: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ	Original	AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ km681001j-20 TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20	PDF
Untitled Abstract: No abstract text available Text: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be em ployed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series	OCR Scan	LH521002A 28-pin, 400-mil 28SOJ SOJ28-P-400) LH521002A ---------------------------------28-pin,	PDF
Untitled Abstract: No abstract text available Text: LH521002C SHARP CMOS 256K x 4 Static RAM Data Sheet FEATURES The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) ¡s reduced on the ‘L’ version with respect to	OCR Scan	28-pin, 300-mil 400-mil LH521002C 28SOJ400 LH521 28-Din.	PDF
Untitled Abstract: No abstract text available Text: SHARP CORP blE D • filflDTTfi OOO^flfi Mbb * S R P J LH521002 FEATURES • Fast Access Times: 20/25/35 ns • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • Common I/O for Low Pin Count	OCR Scan	LH521002 28-Pin, 400-mil SOJ28-P-4QO) LH521002K-25	PDF
S21002 Abstract: No abstract text available Text: LH521002 FEATURES • Fast Access Times: 20 725/35 ns • High Density 28-Pin, 400-mil SOJ • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • Common I/O for Low Pin Count	OCR Scan	LH521002 28-Pin, 400-mil SOJ28-P-400) LH521002K-25 S21002M S21002	PDF
Untitled Abstract: No abstract text available Text: SHARP LH521002C CMOS 256K x 4 Static RAM Data Sheet The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) is reduced on the ‘L’ version with respect to	OCR Scan	LH521002C 28-pin, 300-mil 400-mil 300-MILSOJ 28SOJ SOJ28-P-4QO)	PDF
lh57257 Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02 Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429	OCR Scan	IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02	PDF
Untitled Abstract: No abstract text available Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A	OCR Scan	LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A	PDF
BNK-17 Abstract: No abstract text available Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85	OCR Scan	LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17	PDF
Untitled Abstract: No abstract text available Text: CMOS 256K x 4 Static RAM FEATURES • Fast Access Times: 20/25/35 ns • JEDEC Standard Pinouts Read cycles occur when E is LOW and W is HIGH. A Read cycle will^begin upon an addressjransition, on a falling edge of E, or on a rising edge of W. • 5 V ±10% Supply	OCR Scan	28-PIN 28-Pin, 400-mil LH521002 SOJ28-P-400) LH521002K-25 521002MO	PDF
LH5160N Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55 Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.	OCR Scan	LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55	PDF

organizational structure samsung Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256 Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116	OCR Scan	LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256	PDF
521002 Abstract: lh521002 Text: C M O S 256K x 4 Static RAM FEATURES • Fast Access Times: 20/25/35 ns • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • Common I/O for Low Pin Count • 2 V Data Retention • JEDEC Standard Pinouts	OCR Scan	28-Pin, 400-mil LH521002 LH521002 SOJ28-P-4 LH521002K-25 521002MD 521002	PDF
LH5911 Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.	OCR Scan	LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl	PDF
lh5168 Abstract: No abstract text available Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full	OCR Scan	LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV	PDF
5268A Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%	OCR Scan	5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN	PDF
Spil polyimide system in package Abstract: B-629 Text: SHARP LH521007C Data Sheet CMOS 128K X 8 Static RAM FEATURES When both Chip Enables are active and W is inactive, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation,	OCR Scan	32-Pin, 300-mil 400-mil LH521007C 576-bit -65sC~ 2604C 1500G, LH521002CK Spil polyimide system in package B-629	PDF
9660t Abstract: LH521008 Text: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed	OCR Scan	LH101504 LH101510 LH101504/LH101510 256K/1M-bit 742S6 9660t LH521008	PDF
LH521007AK-20 Abstract: No abstract text available Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.	OCR Scan	LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20	PDF
MB821 Abstract: LH521002K-20 KM641001-20 UPD431004LE-25 UPD431004LE-20 KM641001-25 KM641001-35 LH521002K-25 t5c1 t5c1005 Text: - 145 m s it £ ÎS Â ÏE H OC RAM 2 6 2 1 4 4 x 4 ) IM CMOS S t a t i c X 'i 7 f y 7 # t ì TAAC sax (ns) TCAC •ax (ns) TOE max TOH nin (ns) (ns) TOD nax (ns) TWP tin (ns) % TDS rain TDH TWD min (ni;) (ns) (ns) TWR œax (ns) VC'D or V C C (V) 28 PI N	OCR Scan	62144x4) 28PIN 1M624257JP-45 HM624257I JP-35 HHB24257LJP-45 KM641001-208 MCM6229A-30 T5C1005-25 HT5C1005-35 MB821 LH521002K-20 KM641001-20 UPD431004LE-25 UPD431004LE-20 KM641001-25 KM641001-35 LH521002K-25 t5c1 t5c1005	PDF
LHS168 Abstract: LH52252A LH52252 Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j	OCR Scan	LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252	PDF

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LH521002 Price and Stock

Sharp Microelectronics of the Americas LH521002AK-35

Sharp Microelectronics of the Americas LH521002AK-20

Sharp Microelectronics of the Americas LH521002AK-25

Sharp Microelectronics of the Americas LH521002K-25

Sharp Microelectronics of the Americas LH521002BK-20

LH521002 Datasheets (30)

LH521002 Datasheets Context Search

LH521002AK25

SOJ28-P-400

32-PIN

km681001j-20

Untitled

Untitled

Untitled

S21002

Untitled

lh57257

Untitled

BNK-17

Untitled

LH5160N

organizational structure samsung

521002

LH5911

lh5168

5268A

Spil polyimide system in package

9660t

LH521007AK-20

MB821

LHS168