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    LH521 Search Results

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    LH521 Price and Stock

    Sharp Microelectronics of the Americas LH521007AK-17

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics LH521007AK-17 338 1
    • 1 $6.72
    • 10 $4.368
    • 100 $2.9118
    • 1000 $2.7552
    • 10000 $2.7552
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    Quest Components LH521007AK-17 270
    • 1 $9
    • 10 $9
    • 100 $4.2
    • 1000 $3.9
    • 10000 $3.9
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    LH521007AK-17 148
    • 1 $10.8
    • 10 $7.2
    • 100 $6.66
    • 1000 $6.66
    • 10000 $6.66
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    Sharp Microelectronics of the Americas LH521028U-20

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics LH521028U-20 48
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    LH521028U-20 20 1
    • 1 $12
    • 10 $9
    • 100 $8.1
    • 1000 $8.1
    • 10000 $8.1
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    Not Specified LH521007AK-17

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics LH521007AK-17 37
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 -
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    Sharp Microelectronics of the Americas LH521002AK-35

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics LH521002AK-35 11 2
    • 1 -
    • 10 $2.912
    • 100 $2.912
    • 1000 $2.912
    • 10000 $2.912
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    Quest Components LH521002AK-35 8
    • 1 $6
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
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    Sharp Microelectronics of the Americas LH521007CK-20

    IC,SRAM,128KX8,CMOS,SOJ,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LH521007CK-20 17,397
    • 1 $4.5
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $1.575
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    LH521 Datasheets (73)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH521002AK-17 Sharp SRAM GP Single Port Original PDF
    LH521002AK-20 Sharp SRAM GP Single Port Original PDF
    LH521002AK-25 Sharp SRAM GP Single Port Original PDF
    LH521002BK-17 Sharp SRAM GP Single Port Original PDF
    LH521002BK-17L Sharp SRAM GP Single Port Original PDF
    LH521002BK-20 Sharp SRAM GP Single Port Original PDF
    LH521002BK-20L Sharp SRAM GP Single Port Original PDF
    LH521002BK-25 Sharp SRAM GP Single Port Original PDF
    LH521002BK-25L Sharp SRAM GP Single Port Original PDF
    LH521002BK-35 Sharp SRAM GP Single Port Original PDF
    LH521002BK-35L Sharp SRAM GP Single Port Original PDF
    LH521002BNK-17 Sharp SRAM GP Single Port Original PDF
    LH521002BNK-17L Sharp SRAM GP Single Port Original PDF
    LH521002BNK-20 Sharp SRAM GP Single Port Original PDF
    LH521002BNK-20L Sharp SRAM GP Single Port Original PDF
    LH521002BNK-25 Sharp SRAM GP Single Port Original PDF
    LH521002BNK-25L Sharp SRAM GP Single Port Original PDF
    LH521002BNK-35 Sharp SRAM GP Single Port Original PDF
    LH521002BNK-35L Sharp SRAM GP Single Port Original PDF
    LH521002CK-17 Sharp SRAM GP Single Port Original PDF

    LH521 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH521028

    Abstract: LH521028A 521028-1D
    Text: LH521028A A14 A13 G A15 VSS ALE VCC VSS 9 W DQ10 4 3 2 1 52 51 50 49 48 47 46 DQ8 45 DQ7 10 44 DQ6 11 43 VCC DQ11 12 42 VSS DQ12 13 41 DQ5 DQ13 14 40 DQ4 DQ14 15 39 DQ3 DQ2 VSS 16 38 VCC 17 37 VSS DQ15 18 36 VCC DQ0 A11 DQ1 34 A12 35 20 21 22 23 24 25 26 27 28 29 30 31 32 33


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    PDF LH521028A 52PLCC-A 52-Pin 52-pin, PLCC52-P-750) LH521028AU-15 521028AM LH521028 LH521028A 521028-1D

    LH521007AK-25

    Abstract: lh521007ak 32-PIN
    Text: LH521007A FEATURES • Fast Access Times: 17/20/25 ns • Two Chip Enable Controls • Low-Power Standby When Deselected • TTL Compatible I/O • 5 V ±10% Supply • Fully-Static Operation • 2 V Data Retention • Package: 32-Pin, 400-mil SOJ FUNCTIONAL DESCRIPTION


    Original
    PDF LH521007A 32-Pin, 400-mil LH521007A 576-bit 32SOJ400A LH521007AK-25 lh521007ak 32-PIN

    LH521002AK25

    Abstract: No abstract text available
    Text: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be employed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series


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    PDF LH521002A LH521002A 28SOJ SOJ28-P-400) 28SOJ400 28-pin, 400-mil LH521002AK25

    32-PIN

    Abstract: No abstract text available
    Text: LH521007B FEATURES • Fast Access Times: 17/20/25/35 ns • Two Chip Enable Controls • Low Power Standby When Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • 2 V Data Retention L Version • Packages: 32-Pin, 300-mil SOJ (Preliminary)


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    PDF LH521007B 32-Pin, 300-mil 400-mil 32SOJ400 32-PIN

    LH521028U-25

    Abstract: LH521028
    Text: LH521028 FEATURES • Fast Access Times: 17/20/25/35 ns • Wide Word 18-Bits for: – Improved Performance – Reduced Component Count – Nine-bit Byte for Parity • Transparent Address Latch • Reduced Loading on Address Bus • Low-Power Stand-by Mode when


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    PDF LH521028 18-Bits) 52PLCC PLCC52-P-750) 52-pin, 750-mil LH521028U-25 LH521028

    LH521028

    Abstract: LH521028A
    Text: LH521028A ALE 1 52 51 50 49 48 47 46 A14 2 A13 3 G 4 A15 VSS 5 W 6 DQ8 45 DQ7 10 44 DQ6 11 43 VCC DQ11 12 42 VSS DQ12 13 41 DQ5 DQ13 14 40 DQ4 DQ14 15 39 DQ3 DQ2 DQ10 9 VCC VSS 18 36 VCC DQ16 19 35 DQ1 DQ17 34 20 21 22 23 24 25 26 27 28 29 30 31 32 33 DQ0


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    PDF LH521028A 52PLCC-A 52-Pin 52-pin, PLCC52-P-750) LH521028AU-15 521028AM LH521028 LH521028A

    SOJ28-P-400

    Abstract: No abstract text available
    Text: LH521002C CMOS 256K x 4 Static RAM Data Sheet The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained IDR under this Data Retention condition. CMOS Standby Current (ISB2) is reduced on the ‘L’ version with respect to


    Original
    PDF LH521002C 2613-banchi, J63428 SMT94020 SOJ28-P-400

    32-PIN

    Abstract: SOJ32-P-300
    Text: LH521007C CMOS 128K x 8 Static RAM Data Sheet When both Chip Enables are active and W is inactive, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation,


    Original
    PDF LH521007C 2613-banchi, J63428 SMT94021 32-PIN SOJ32-P-300

    Untitled

    Abstract: No abstract text available
    Text: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be em­ ployed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series


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    PDF LH521002A 28-pin, 400-mil 28SOJ SOJ28-P-400) LH521002A ---------------------------------28-pin,

    Untitled

    Abstract: No abstract text available
    Text: LH521028 FEATURES • Fast Access Times: 17/20/25/35 ns • Wide Word 18-Bits for: - Improved Performance - Reduced Component Count - Nine-bit Byte for Parity • Transparent Address Latch • Reduced Loading on Address Bus • Low-Power Stand-by Mode when


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    PDF LH521028 18-Bits) 52-Pin 52PLCC PLCC52-P-750) 52-pin, 750-mii LH521028

    Untitled

    Abstract: No abstract text available
    Text: LH521002C SHARP CMOS 256K x 4 Static RAM Data Sheet FEATURES The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) ¡s reduced on the ‘L’ version with respect to


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    PDF 28-pin, 300-mil 400-mil LH521002C 28SOJ400 LH521 28-Din.

    Untitled

    Abstract: No abstract text available
    Text: LH521028 FEATURES • Fast Access Times: 17/20/25/35 ns • Wide Word 18-Bits for: - Improved Performance - Reduced Component Count - Nine-bit Byte for Parity • Transparent Address Latch • Reduced Loading on Address Bus • Low-Power Stand-by Mode when


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    PDF LH521028 18-Bits) 52-Pin 52PLCC PLCC52-P-750) 52-pin, 750-mii LH521028

    LH521028

    Abstract: xmxxx
    Text: LH521028 CMOS 64K x 18 Static RAM operations on the high and the low bytes. The Address Latches are transparent when ALE is HIGH for applica­ tions not requiring a latch , and are latched when ALE is LOW. The Address Latches and the wide word help to eliminate the need for external Addressbusbuffers and/or


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    PDF LH521028 18-Bits) 52-Pin LH521028 648-bit 52PLCC PLCC52-P-750) xmxxx

    Untitled

    Abstract: No abstract text available
    Text: LH521028 CMOS 64K x 18 Static RAM FEATURES • Fast Access Times: 17/20/25/35 ns • Wide Word 18-Bits for: - Improved Performance - Reduced Component Count - Nine-bit Byte for Parity • Transparent Address Latch • Reduced Loading on Address Bus • Low-Power Stand-by Mode when


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    PDF LH521028 18-Bits) 52-Pin 648-bit 52PLCC PLCC52-P-750) 52-pin,

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP blE D • filflDTTfi OOO^flfi Mbb * S R P J LH521002 FEATURES • Fast Access Times: 20/25/35 ns • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • Common I/O for Low Pin Count


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    PDF LH521002 28-Pin, 400-mil SOJ28-P-4QO) LH521002K-25

    S21002

    Abstract: No abstract text available
    Text: LH521002 FEATURES • Fast Access Times: 20 725/35 ns • High Density 28-Pin, 400-mil SOJ • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • Common I/O for Low Pin Count


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    PDF LH521002 28-Pin, 400-mil SOJ28-P-400) LH521002K-25 S21002M S21002

    Spil polyimide system in package

    Abstract: B-629
    Text: SHARP LH521007C Data Sheet CMOS 128K X 8 Static RAM FEATURES When both Chip Enables are active and W is inactive, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation,


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    PDF 32-Pin, 300-mil 400-mil LH521007C 576-bit -65sC~ 2604C 1500G, LH521002CK Spil polyimide system in package B-629

    Untitled

    Abstract: No abstract text available
    Text: SHARP LH521002C CMOS 256K x 4 Static RAM Data Sheet The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) is reduced on the ‘L’ version with respect to


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    PDF LH521002C 28-pin, 300-mil 400-mil 300-MILSOJ 28SOJ SOJ28-P-4QO)

    Untitled

    Abstract: No abstract text available
    Text: LH521008 FEATURES • Fast Access Times: 20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O C M O S 128K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs.


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    PDF LH521008 32-pin, 400-mil SOJ32-P-400) LH521008K-25

    Untitled

    Abstract: No abstract text available
    Text: LH521028 FEATURES • Fast Access Times: 20/25/35 ns • Wide Word 18-Bits for: - Improved Performance - Reduced Component Count - Nine-bit Byte for Parity Transparent Address Latch • Reduced Loading on Address Bus • Low Power Stand-by Mode when Deselected


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    PDF LH521028 18-Bits) 52-Pin 52-pin, PLCC52-P-750) LH521028U-25 52102BMD

    lh521007

    Abstract: No abstract text available
    Text: PRELIMINARY LH521007/ FEATURES • Fast Access Times: 20 725/35 ns • Two Chip Enable Controls • High Density 32-Pin, 400-mil SOJ • Low Power Standby When Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • 2 V Data Retention


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    PDF LH521007/ 32-Pin, 400-mil LH521007 SOJ32-P-400) LH521007K-25 lh521007

    DIP32-P-400

    Abstract: No abstract text available
    Text: PRELIMINARY LH521007 FEATURES • Fast Access Times: 20/25/35 ns • Two Chip Enable Controls • Low Power Standby When Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • 2 V Data Retention • Packages: 32-Pin, 400-mil DIP


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    PDF LH521007 32-Pin, 400-mil SOJ32-P-4001 DIP32-P-400

    Untitled

    Abstract: No abstract text available
    Text: SHARP LH521007C CMOS 128K x 8 Static RAM Data Sheet When both Chip Enables are active and W is inactive, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation,


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    PDF 32-Pin, 300-mil 400-mil LH521007C EME9300H 150mA LH521002QK 256Kx4) FRCRE002

    LH5s

    Abstract: No abstract text available
    Text: LH521008 FEATURES CMOS 128K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be performed by simply changing the address.


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    PDF LH521008 32-Pin, 400-mil DIP32-P-400) LH5s