DSEE8-08CC
Abstract: 10P40
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
DSEE8-08CC
10P40
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ixys dsi
Abstract: 30-08AC 30-12AC ir 2411
Text: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings
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ISOPLUS220TM
220TM
30-08AC
30-12AC
ISOPLUS220
DS98791A
ixys dsi
30-08AC
30-12AC
ir 2411
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26N50
Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM
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ISOPLUS220TM
26N50
24N50
220LVTM
IXFC26N50
IXFC24N50
IXFH26N50
728B1
123B1
728B1
26N50
IXFC 26N50
24N50
ixfc26n50
.26n50
.24n50
IXFC24N50
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16-06A
Abstract: DSEA16-06AC 1606a
Text: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol
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DSEA16-06AC
ISOPLUS220TM
6A/DSEC16-06A
ISOPLUS220
16-06A
DSEA16-06AC
1606a
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IXUC160N075
Abstract: No abstract text available
Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous
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IXUC160N075
ISOPLUS220TM
220TM
728B1
065B1
123B1
IXUC160N075
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DSEC29
Abstract: DSEC 29 DSEC
Text: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC
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59-06BC
ISOPLUS220TM
E153432
29-06B
DS98817A
DSEC29
DSEC 29
DSEC
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CoolMOS Power Transistor
Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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ISOPLUS220TM
25N80C
E153432
065B1
728B1
123B1
CoolMOS Power Transistor
POWER MOSFET 4600
UPS SIEMENS
25N80C
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80N085
Abstract: No abstract text available
Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80N085
ISOPLUS220TM
405B2
80N085
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Untitled
Abstract: No abstract text available
Text: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A
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20-06CC
ISOPLUS220TM
2x300V)
ISOPLUS220A
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Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
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23N60C5
ISOPLUS220TM
E72873
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Untitled
Abstract: No abstract text available
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
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16N60B2D
Abstract: No abstract text available
Text: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings
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16N60B2
16N60B2D1
ISOPLUS220TM
IC110
ID110
IXGC16N60C2D1
220TM
E153432
405B2
16N60B2D
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface Symbol Test Conditions ISOPLUS220TM Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous
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ISOPLUS220TM
60N10
728B1
065B1
123B1
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1
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ISOPLUS220TM
180N055T
180N055T
O-220
O-220)
123B1
728B1
065B1
IXTP180N055T
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ixfh26n50q
Abstract: 26N50 IXFC 26N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS220TM
26N50Q
24N50Q
220TM
26N50
24N50
ixfh26n50q
IXFC 26N50
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20n60c
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600
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ISOPLUS220TM
20N60C
220LVTM
O-220LV
728B1
065B1
123B1
20n60c
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Untitled
Abstract: No abstract text available
Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode Electrically Isolated Back Surface IFAV = 30 A VRRM = 600 V trr = 30 ns VRRMc ISOPLUS220TM ISOPLUS220TM VRRM V V 600 300 Type DSEE29-06CC 1 2 3 G Symbol Conditions Maximum Ratings TC = 115°C; rectangular, d = 0.5
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DSEE29-06CC
ISOPLUS220TM
DS98815
ISOLPLUS220LV
728B1
065B1
123B1
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Untitled
Abstract: No abstract text available
Text: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 VQ trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 1200 600 Type ISOPLUS220TM DSEE29-12CC 1 2 1 3 2 3 Isolated back surface * Symbol
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DSEE29-12CC
ISOPLUS220TM
ISOPLUS220
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Untitled
Abstract: No abstract text available
Text: DGSS 10-06CC Gallium Arsenide Schottky Diode IDC = 9 A VRRM = 600 V CJunction = 16 pF ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRRMQ V VRRM Type ISOPLUS220TM V 600 300 1 DGSS 10-06CC 1 2 2 3 3 Isolated back surface * Symbol IDC
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10-06CC
ISOPLUS220TM
10-06CC
300us,
8863A
ISOPLUS220
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IXYS SEMICONDUCTOR
Abstract: No abstract text available
Text: DGSS 10-06CC VRRM = 2x300 V IDC = 18 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Circuit Package ISOPLUS220A DGSS 10-06CC 1 2 3 1 3 Features Conditions Maximum Ratings
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10-06CC
ISOPLUS220TM
2x300
ISOPLUS220A
DGSS10-06CCC
D-68623
IXYS SEMICONDUCTOR
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80N085
ISOPLUS220TM
405B2
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Untitled
Abstract: No abstract text available
Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features
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40N60C
ISOPLUS220TM
E72873
20080523a
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 16N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 9 A Ω ≤ 650 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol
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ISOPLUS220TM
16N80P
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Untitled
Abstract: No abstract text available
Text: DGSS 6-06CC VRRM = 600 V 2x300V IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC DGSS 6-06CC Circuit Package ISOPLUS220A
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6-06CC
2x300V)
ISOPLUS220TM
ISOPLUS220A
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