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    918 TRANSISTOR PNP Search Results

    918 TRANSISTOR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    918 TRANSISTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    solenoid pwm proportional valve

    Abstract: PT100 2 wires burkert flow control valve accuracy proportional Solenoid Control valve pt100 to 0-10 V DIN 43650 form a pt100 temperature sensor transmitter 4-20 ma m12 connector 8 pin pin out power din 4pin
    Text: 8611 eCONTROL Universal process controller eCONTROL • Continuous, 2-point, 3-point and On/Off control • Ratio control function • Sensor inputs 4-20 mA, 0-10 V, frequency, RDT • Control of proportional, process and motor valves • Bürkert proportional valves and flow meters are memorized


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    2012C solenoid pwm proportional valve PT100 2 wires burkert flow control valve accuracy proportional Solenoid Control valve pt100 to 0-10 V DIN 43650 form a pt100 temperature sensor transmitter 4-20 ma m12 connector 8 pin pin out power din 4pin PDF

    2N5320

    Abstract: CA3273 HIP1090 HIP1090AS
    Text: HIP1090 S E M I C O N D U C T O R Protected High Side Power Switch with Transient Suppression March 1995 Features • • • • • • • • Description ±90V Transient Suppression 4V to 16V Operating Voltage 1A Current Load Capability Low Input-Output Voltage Drop With Controlled


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    HIP1090 150oC -40oC 125oC O-220AB 2N5320 CA3273 HIP1090 HIP1090AS PDF

    HFA3046

    Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


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    HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127B PDF

    Y2923

    Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for


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    023SbOS Q62702-S154 fl235b05 Y2923 2sc 965 transistor b0961 Q62702-S154 lfe10 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
    Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81


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    2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for


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    23SbOS PDF

    transistor P17

    Abstract: p17 npn 918 TRANSISTOR PNP PDTC124ET PDTA124ET
    Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES • Built-in bias resistors R1 and R2 typ. 22 kQ each • Simplification of circuit design • Reduces number of components and boardspace. APPLICATIONS • Especially suitable for space


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    PDTC124ET PDTA124ET. transistor P17 p17 npn 918 TRANSISTOR PNP PDTC124ET PDTA124ET PDF

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


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    5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451 PDF

    bcw 918

    Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
    Text: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221


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    O-236 bcw 918 SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115 PDF

    4 channel car audio amplifier circuit

    Abstract: 4ch car amp ic TA8262H TA8262
    Text: TOSHIBA TA8262H TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8262 H MAX POWER 43 W BTL x 4CH AUDIO POWER 1C The TA8262H is 4ch BTL audio power amplifier for car audio application. This 1C can generate more high power : Po u t m a x = 43 W as it is included the pure complementary PNP and


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    TA8262H TA8262 TA8262H 4 channel car audio amplifier circuit 4ch car amp ic PDF

    178 09T

    Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


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    BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor PDF

    BT2222A

    Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
    Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.


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    BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944 PDF

    TA8262H

    Abstract: 775Vrms 4 channel car audio amplifier circuit diagram 4ch car amp ic TA8262
    Text: TOSHIBA TA8262H TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8262 H MAX POWER 43 W BTL x 4CH AUDIO POWER 1C The TA8262H is 4ch BTL audio power amplifier for car audio application. This 1C can generate more high power : Po u t m a x = 43 W as it is included the pure complementary PNP and


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    TA8262H TA8262 TA8262H HZIP25-P-1 36-5MAX 775Vrms 4 channel car audio amplifier circuit diagram 4ch car amp ic PDF

    2n h 2222a

    Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT


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    2N917 O-237 2n h 2222a transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 33T4 PDF

    equivalent transistor 2N1711

    Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 equivalent transistor 2N1711 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR PDF

    ta8260ah

    Abstract: 4 channel car audio amplifier circuit 4ch car amp ic 127-E
    Text: TOSHIBA TA8260AH TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8260AH MAX POWER 40 W BTL x 4CH AUDIO POWER 1C The TA8260AH is 4ch BTL audio power amplifier for car audio application. This 1C can generate more high power : Po u t m a x = 40 W as it is included the pure complementary PNP and


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    TA8260AH TA8260AH HZIP25-P-1 36-5MAX 4 channel car audio amplifier circuit 4ch car amp ic 127-E PDF

    transistor t2a

    Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200


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    BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA PDF

    2N1026

    Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 2N1026 2N1025 2N2708 PDF

    2N3053 NPN transistor

    Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222 PDF

    2n3219

    Abstract: 2N4260 RAYTHEON 2N3635 2N2004 2N2708 2N3910 2N3960 2N4261 2N915 2N2333
    Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Volts m A/m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF M ax 2N 943


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    2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BT2946 2n3219 2N4260 RAYTHEON 2N3635 2N2708 2N3910 2N3960 2N4261 2N915 PDF

    ta8260ah

    Abstract: No abstract text available
    Text: TO SH IBA TA8260AH TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8260AH MAX POWER 40 W BTL x 4CH AUDIO POWER 1C The TA8260AH is 4ch BTL audio power amplifier for car audio application. This 1C can generate more high power : Po u t m a x =


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    TA8260AH TA8260AH PDF

    2N3134

    Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


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    2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A BT2946 2N2946 BT3999 2N3299 2N3300 2N3302 BT2907A PDF

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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    NPN transistor 2n2222A plastic package to116

    Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package


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    SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467 PDF