6535B05 Search Results

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g

Contextual Info: S IE M E N S Silicon Variable Capacitance Diode B B 639 • For tuning of extended frequency bands •in V H F TV/VTR tuners ty p e BB 639 Ordering Code Pin Configuration tape and reel 1 2 Q62702-B586 C A Marking Package yellow S SOD-323 Maximum Ratings

B158-H6497-X-X-7600

Abstract: A535B old Resistors Siemens s
Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5, up to 18 MHz operation

DIODE 3LU

Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
Contextual Info: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

Contextual Info: Ö235b05 QGD4440 7 « S I E Û SSC D PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04440 7 "- l l - z ! BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

s259b

Contextual Info: QBE D • Û235b05 OülblbH 3 « S I E G Light Emitting Diodes ii / T LG S259 LSS259 Q LED low-current single diodes • • • • • • Backlighting of LCDs Indicator for switching and operation modes Direct drive is possible via CMOS gate and LSTTL components

B45181

Abstract: marking 7EU C4335
Contextual Info: B 45 181 B 45 185-A, B 45 185-V Radial-Lead Capacitors with Solid Electrolyte Construction • • • Tantalum capacitors with solid electrolyte, polar M olded encapsulation, flam e-retardant UL 94 V-0 Radial wire leads with standard spacing (nickel-coated wire, tinned)

Contextual Info: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS NPN Silicon AF Transistors • • • • • BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 PNP BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking CB CC

Contextual Info: ,• SIEM EN S ñSBSbüS 002*^5= T ■ S I E G SIEMENS A KTIENGESELLSCHAF M7E D SAB 80C166/83C166 High-Performance 16-Bit CMOS Single-Chip Microcontrollers for Embedded Control Applications Advance Information SAB 83C166-3S SAB 80C166-S • • • • •

B62152A0008X030

Abstract: smd code 10y 2205-T PMB2205 2205S
Contextual Info: SIEMENS Quadrature Phase Modulator PM B 2205 Preliminary Data Bipolar 1C Features • • • • • • • • • • • • • • • • • Double-balanced mixers Direct modulation Linear modulating inputs Symmetrical circuitry Generation of orthogonal carriers within a wide

smd transistor marking a2h

Abstract: smd transistor marking a7h smd transistor marking a1h 81C91 smd TRANSISTOR code marking A4H SAE81C90 transistor marking code TS2 smd transistor marking p14 cpu 222 siemens TRANSISTOR SMD MARKING CODE BCH
Contextual Info: SIEMENS Stand Alone Full CAN Controller SAE 81C90/91 P r e lim in a r y D a ta • • Full CAN controller for data rate up to 1 Mbaud Com plies with CAN specification V2.0 part A part B passive • Up to 16 messages simultaneous (each with maximum data length)

Contextual Info: SIEM ENS 8-Bit CMOS Microcontroller C517A Advance Information • • • • • • • • • • Full upward compatibility with SAB 80C517A/83C517A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers

SIEMENS 3 TB 40 12 - 0A

Abstract: smd transistor 2T5 SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0A
Contextual Info: SIEMENS ISDN Subscriber Access Controller for UpN-lnterface Terminals ISAC -P TE PSB 2196 Preliminary Data 1 • • • • • • • • • • CMOS IC Features Cost/performance-optimized UPN-interface transceiver, compatible to PEB 2096 OCTAT-P HDLC-controller with 2 x 32 byte FIFO per direction

kss 210

Abstract: Q67100-Q3016 Q67100-Q3017
Contextual Info: SIEM E N S 4M X 36-Bit EDO-DRAM Module HYM 364035S/GS-60 Advanced Inform ation • 4 194 304 words by 36-Bit organization • Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time • Hyper page mode EDO capability 25 ns cycle time

t07 transistor smd

Abstract: smd transistor 2T6 SMD Transistor t07
Contextual Info: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •

Contextual Info: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,

transistor zo 103 MA 7S 738

Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

TUA4300P

Contextual Info: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist­ ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu­ lator and stereo decoder/noiseblanker.

Contextual Info: SIEMENS 3.3 V 168 pin Registered SDRAM Modules HYS 72V8200GR HYS 72V16200GR HYS 72V32200GR HYS 72V32220GR HYS 72V64200GR HYS 72V128220GR 64MB, 128MB, 256MB, 512MB & 1GB Densities Preliminary Information • 168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module

smd marking code BS sot-23 infineon

Contextual Info: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33