FLE35B05 Search Results

MARKING SMD IC CODE 2100

Abstract: VD F1 SMD B10T smd marking code bs Capacitor Tantal SMD MARKING SMD IC CODE 10 pin SIEMENS CAPACITOR SIEMENS svp p 181 y 1R31
Contextual Info: • flE35b05 QO'ìDbi4 2 1 3 m SIEM ENS GaAsMMIC CGY181 Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 £2, simple output match

Contextual Info: • flE35b05 DG3fl33b h ■ Selection Guide SIEMENS AKTIENGESELLSCHAF SIEG 47E D _ EMI suppression chokes l-core chokes Rated inductance per winding Rated Type Rated Page current per Single Double voltage winding choke choke B82500 0.1 to 2 A F 42 120 nH to

l22e

Abstract: BC213 BC212 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B
Contextual Info: SIE D • SIEM ENS flE35b05 0D4153E Obfl M S I E 6 SI EM EN S A K T I E N G E S E L L S C H A F " P 2 ñ 'Z - l PNP Silicon AF Transistors BC212 BC 213 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 182, BC 183 NPN

K2040

Contextual Info: bOE D • flE35b05 DD457M4 200 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF r = 5 3 - o 7 SIMOPAC Module V DS = 4 0 0 V / □ = 2 x R D S o n = 0 . 1 • • • • • • • 4 5 BSM 244 F A £2 Power module Half-bridge FREDFET N channel Enhancement mode

Contextual Info: • flE35b05 DG3fl33b h ■ SIEG Selection Guide SIEMENS AKTIENGESELLSCHAF 47E D _ EMI suppression chokes l-core chokes Rated inductan ce per winding Rated Type Rated Page current per Single Double voltage winding choke choke B82500 0.1 to 2 A F 42 120 nH to

S100 NPN Transistor

Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
Contextual Info: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF

transistor SMD t07

Abstract: SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2
Contextual Info: • flE35b05 OOfllMBO T07 ■ SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •

t07 transistor smd

Abstract: smd transistor 2T6 SMD Transistor t07
Contextual Info: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

PLCC-68 8051 siemens

Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Contextual Info: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

Q67100-H5092

Abstract: SDA 2516-5
Contextual Info: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V

Contextual Info: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

Contextual Info: 6 2 3 5 b O S 0 0 6 1 3 1 4 =163 S IE M E N S HITFET BTS 917 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source voltage Input protection ESD On-state resistance Thermal shutdown

cn/A/U 237 BG

Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Fast 32-bit division, 16-bit 2 multiplication,

Contextual Info: ÔSaSbQS D D 3 2 m b 4?E ì> SIEMENS 4 • S IE G SIEMENS AKTIENGESELLSCHAF Token Bus Modem TBM SAB 82511 Advanced Information • • • • • Carrier-band modem fully compatible with IEEE 802.4 and MAP Standard 5 and 10 Mbit/s data rate using phase-coherent FSK modulation

Contextual Info: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12

Contextual Info: bOE II • SIEMENS ÌE3 5b OS 0G5G3b1 3T1 H S I E 6 SIEMENS AKTIENGESELLSCHAF Programmable Timer SAE 0530; SAE 0531 ; SAE 0532 Preliminary Data Bipolar IC Features • Direct operation from AC line or DC supply • Time base: 50/60 Hz line frequency or any clock

tda 2572

Abstract: tda 2050 equivalent TDA 1432
Contextual Info: SIEM ENS Clock Sync Generator SDA 9257 Preliminary Data MOS 1C Features • • • • • • • • • • All settings made by I2C Bus PLL lock-in behavior can be set to TV- or VCR mode Automatic clamping of CVBS input Provides all horizontal and vertical sync signals and

Contextual Info: SIEMENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50 -60 -70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature Low power dissipation max. 660 mW active -50 version

30C162

Abstract: 12x10 character TRANSISTOR SMD MARKING CODE kh "character rom" siemens S43 SMD marking code AE SMD Transistor siemens flash smd marking KH 235L P-LCC-68-1
Contextual Info: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update

smd transistor 41B

Abstract: transistor c160 smd marking KD TRANSISTOR SMD MARKING CODE kd TRANSISTOR SMD MARKING CODE XI siemens microcontroller s47 IC smd marking code smd transistor marking HA YRE -154 h FR MARKING SMD TRANSISTOR
Contextual Info: S IE M E N S 5-V Low-Drop Voltage Regulator TLE 4263 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

IGBT Module BSM150GB120D

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Contextual Info: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule