FL23SBOS Search Results

Transistor BFR 97

Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

tca 335 A

Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range

sab 8031a-p

Abstract: 8031a microcontroller Siemens SAB 8031 sab 8031a SAB 8051A-P 8031a
Contextual Info: SIEM EN S 47E D • fl23SbOS 0G2ÔÜ5Ô 0 I SI Ef i SIEMENS AKTIENGESELLSCHAF SAB 8051A/8031A Ext. Temp 8-Bit Single-Chip Microcontroller Extended Temperature Range: -4 0 *0 to +85°C -4 0 'C to +110*0 Mask-Programmable ROM SAB 8051A-12-P-T40/85 SAB 8051A-10-P-T40/110

transistor s0014

Abstract: S0014
Contextual Info: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong

SAB 8051a p

Abstract: intel 8051A SAB 8051 p SAB 81 C 50 P 8352-5-16-P-T3 SiEMENS EC 350 98 SIEMENS SAB 8051A-P
Contextual Info: m fl23SbOS OOS'ISM'i 0 « S I E G 47E D SIEM EN S SIEMENS AKTIENGESELLSCHAF 7= V ?-/?-£> r 8-Bit Single Chip Microcontroller SAB 80513/80513-16 SAB 8352-5/8352-5-16 Preliminary Data SAB 80513/80513-16 SAB 8352-5/8352-5-16 • • • • • • • • •

Contextual Info: ESC D • fl23SbOS 000MS21 7 « S I E G NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF : l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.

THYRISTOR br 403

Abstract: SIEMENS THYRISTOR thyristor 808 BR403
Contextual Info: i 2SC D • fl23SbOS 0G047bl S Silicon Miniature Thyristor I SIEG BR403 3.5-11 SIEMENS AKTIEN6ESELLSCHAF Si BR 4 0 3 is a silicon planar thyristor in a plastic package silimar to TO 202. The thyristor is especially suitable for use in switching power supplies as well as for universal applications

3004x

Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

a1011

Abstract: 3A21N BUZ25 C67078-A1011-A2 V103 T2030
Contextual Info: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS AK TI EN GES ELL SCH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description C ase Type

BPX38

Abstract: flux meter glass lens phototransistor
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)

LPD-80A

Abstract: A950
Contextual Info: SIEMENS AKTIENGESELLSCHAF i4?E » • fl23SbOS D D 2 7 S 0 A SIEMENS T «SIEG LPD-80A PHOTODARLINGTON M ¿3 Advance Data Sheet FEATURES Maximum Ratings • Silicon NPN Photodarlington • Miniature Side-Facing Package Collector Emitter Voltage Emitter Collector Voltage

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l

Contextual Info: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS A K T IENG ES EL LS CH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description SIPMOS, N-channel, enhancement mode

Phototransistor to-18

Abstract: D0275 bpx38
Contextual Info: SIEMENS AK TIE NGESELLSCHAF M7E D • fl23SbOS GG27500 SIEM ENS «SIEG BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature (T^, -55°C to +125°C Soldering Temperature (distance from soldering joint to package ¿2 mm)

acy smd

Abstract: C504 C504-2R C504-L SAB-C504 SAF-C504 SAH-C504 SAK-C504 KSS 40Mhz crystal oscillator
Contextual Info: • fl23SbOS 0 0 3 2 3 0 0 2flb ■ SIEMENS 10 10.1 Device Specifications C504 Device Specifications Absolute Maximum Ratings Ambient temperature under bias r A . 0 'C to + 70 "C

c2259

Abstract: w188 N2905
Contextual Info: 2SC D • fl23SbOS QQOMÔ^q 2 ■ SIEû PNP Silicon Planar Transistors 2 N 290 4 A 2 N 2905 A SIEMENS AKTIEN6ESELLSCHAF 2 N 2 9 0 4 A and 2 N 2 9 0 5 A are epitaxial PNP silicon planar transistors in TO 3 9 case 5 C 3 DIN 41 87 3 . The collector is electrically connected to the case. The transistors are

transistor C 2240

Abstract: transistor 224-1 base collector emitter
Contextual Info: ESC D • fl23SbOS Q0Q4677 2 ■SIEfi . Control Unit 25C 0487 7 ~Q . " f _ />r B ZW 20 — SIEMENS AKTIEN6ESELLSCHAF This component, a transistor with integrated base emitter resistance and a Z diode, in TO 236 case 24 A 3 DIN 41869 is designed for use as control unit in various professional and

N2A-2

Abstract: RF1X D3/HS 2303
Contextual Info: SIEMENS ICs for Communications Dual 2GigaPLL PMB 2303 V1.0 Target Specification 4.95 fl23SbOS GG7fll07 314 PMB 2303 Revision History Previous Releases: Page 4.95 ♦ none Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible

BZW20 DIODE

Abstract: BZW20 Q62702-Z1387 5C048
Contextual Info: 2SC D • fl23SbOS Q0Q4677 2 ■SIEfi . Control Unit 25C 0487 7 ~Q . " f _ />r BZW 20 “ SIEMENS AKTIEN6ESELLSCHAF This component, a transistor with integrated base emitter resistance and a Z diode, in TO 236 case 24 A 3 DIN 41869 is designed for use as control unit in various professional and

Contextual Info: 47E D SIEM EN S • fl23SbOS DDBbSMO □ ■ SIEG SIEMENS AKT IENGESELLSCHAF ~r=-7^S-~Cl BSM 652 F SIMOPAC Module V ds Id R OS on • • • • • • • = 500 V = 6 x 17 A = 0.35 n Power module 3-phase pull-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate

Contextual Info: SIE M EN S A K T I E N G E S E L L S C H A F 4?E » fl23SbOS □ D 2 7 clll 3 « S I E G m r E 9860 Features: • epoxy-coated low profile housing • high operation voltage permissible • high maximum power dissipation Application: • contrast control of

A751

Abstract: DIN 41872 BU205
Contextual Info: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor BU 205 O' SIEMENS A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is

A1009

Abstract: A1152 BSM111 A1009A siemens bsm 284 f a1002a BSM294F FREDFET BSM181 BSM284F
Contextual Info: IEMENS AKTIEN6ESELLSCHAF D3E D • fl23SbOS 001Sb45 3 M S I E ú ? SIMOPAC Leistungsm odule SIMOPAC Pow er M odules Einzelschalter im Kunststoffgehäuse m it isolierter M etallbodenplatte Single switches in plastic package w ith insulated m etal base plate

Contextual Info: SI EM EN S A K T I E N G E S E L L S C H A F -p.L/|-qf 4?E D • fl23SbOS 0 0 2 7 T1 S 0 ■ SIEG T 9060 Features: • molded round plastic housing • vertical light incidence Application: • automatic outdoor lamp switching • final stop in record players