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    55DMB Price and Stock

    Rochester Electronics LLC 27C512-55DM-B

    IC EPROM 512KBIT PARALLEL 32CDIP
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    DigiKey 27C512-55DM-B Bulk 2
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    Amphenol Communications Solutions 8655DMBT1B13KLF

    DSUB METAL HOOD 25-6560-0217-33
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    DigiKey 8655DMBT1B13KLF Bulk 50
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    Newark 8655DMBT1B13KLF Bulk 50
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    Amphenol Communications Solutions 8655DMBT1B33KLF

    DSUB METAL HOOD 25 M2.6-6560-221
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    Amphenol Communications Solutions 8655DMBS2B13KLF

    DSUB METALHOOD ANGLED 25-6560-02
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    Teledyne e2v WS57C49C-55DMB

    PROM, UV ERASABLE, 8K X 8, 55 NS ACCESS - Rail/Tube (Alt: WS57C49C-55DMB)
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    Avnet Americas WS57C49C-55DMB Tube 250
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    55DMB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		P4C148, P4C149 P4C148 P4C149 096-bit PDF

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C168 P4C169 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK


    Original     		P4C1256 --28-Pin --32-Pin 144-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns


    Original     		P4C148, P4C149 P4C148 P4C149 096-bit AM104 PDF

    22-PIN

    Abstract: P4C187 P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


    Original     		P4C187/P4C187L P4C187L P4C187 22-Pin 24-Pin 290x490 28-P400 SRAM111 P4C187 P4C187L PDF

    Untitled

    Abstract: No abstract text available
    Text: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options


    Original     		FT6168, FT6169, FT6170 12/15/20/25/35ns 20/25/35/45/55/70ns FT6168 FT6168 FT6169 PDF

    Untitled

    Abstract: No abstract text available
    Text: FT7C168, FT7C169, FT7C170 HIGH SPEED 4K x 4 SRAM FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT7C168 Military) Three Options – FT7C168 Low Power Standby Mode


    Original     		FT7C168, FT7C169, FT7C170 12/15/20/25/35ns 20/25/35/45/55/70ns FT7C168 FT7C168 FT7C169 PDF

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0 PDF

    cy7c131-55nc

    Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
    Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­


    OCR Scan     		CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; IDT7130 IDT7140 cy7c131-55nc ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7140 PDF

    7c251

    Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
    Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed


    OCR Scan     		CY7C251 CY7C254 7C251) 300-mil 600-mil CY7C254 384-word Y7C251 7c251 a1s smd smd code A1s smd diode code A1s 65WMB PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­


    OCR Scan     		CY7C251 CY7C254 7C251) 300-m 600-mil CY7C251 CY7C254 384-word PROMs3802 CY7C254â PDF

    Untitled

    Abstract: No abstract text available
    Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)


    OCR Scan     		300-mil CY7C271A CY7C271A 768-word 7C271A S50Tbb2 GG1530Q PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7G287 CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding >2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tCo = IS ns


    OCR Scan     		300-mil CY7G287 CY7C287 28-Lead 300-Mil) CY7C287 PDF

    Z1213

    Abstract: CY7C132 CY7C136 CY7C146 zl12
    Text: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features


    OCR Scan     		CY7C132/CY7C136 CY7C142/CY7C146 CY7C142/CY7C146 CY7C132/ CY7C136; 52-pin CY7C132/CY7C136/CY7C142/ CY7C146 Z1213 CY7C132 CY7C136 zl12 PDF

    7C251

    Abstract: C2515 SMD DIODE A13 C251-5 CY7C251-45WC CY7C251 CY7C254 01d smd code smd diode code A1s 5962-895370
    Text: CY7C251 CY7C254 y CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251) — Less than 165 mW when deselected


    OCR Scan     		CY7C251 CY7C254 7C251) 300-mil 600-mil 384-word Y7C251 7C251 C2515 SMD DIODE A13 C251-5 CY7C251-45WC 01d smd code smd diode code A1s 5962-895370 PDF

    30l3l

    Abstract: No abstract text available
    Text: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR F eatures F unctional D escription • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


    OCR Scan     		CY7C132/CY7C136 CY7C142/CY7C146 MASTERCY7CI32/CY7C136 CY7C132/ CY7C136; 52-pin CY7C142/CY7C146 30l3l PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical


    OCR Scan     		P4C1981 /P4C1981L, P4C1982/P4C1982L l2/l5/20/25ns 20/25/35/45/55ns P4C1981L/1982L P4C1981/L P4C1982/L P4C1981/82 P4C1981L/82L PDF

    LM35N

    Abstract: No abstract text available
    Text: PERFORMANCE SEM ICO NDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


    OCR Scan     		70b2517 P4C1981 /P4C1981L, P4C1982/P4C1982L l2/l5/20/25ns 20/25/35/45/55ns P4C1981L/1982L P4C1981/L P4C1982/L 28-Pin LM35N PDF

    CY7C128A

    Abstract: 7C128 CY7C128A-45DMB CY7C128A-55DMB
    Text: CYPRESS MbE D SEMICONDUCTOR • SSÖ'ibbS QÜ0b332 T -p L { W -l» WM CYPRESS SEMICONDUCTOR A utom atic pow er-dow n w hen deselected • ViH O f2.2V C M O S fo r o p tim u m speed/pow er Functional Description The CY7C128A is a high-performance CMOS static RAM organized as 2048


    OCR Scan     		QQ0h332 CY7C128A CY7C128A consA-55DC CY7C128Aâ 55DMB 55LMB 7C128 CY7C128A-45DMB CY7C128A-55DMB PDF

    1s34

    Abstract: P4C198 P4C1981 P4C1981L P4C1982L
    Text: PERFORMANCE SEMICONDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial)


    OCR Scan     		70b2S17 P4C1981 /P4C1981L, P4C1982/P4C1982L l2/l5/20/25ns 20/25/35/45/55ns Active-12 P4C1981/82 P4C1981L/82L P4C1981L/1982L 1s34 P4C198 P4C1981L P4C1982L PDF

    CY27H010-45PC

    Abstract: CY27H010-55Wmb 27H010 CY27H010
    Text: CY27H010 « r CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected


    OCR Scan     		CY27H010 32-pin -32-pin 32-pin, 600-mil CY27H010 ThZ32 CY27H010-45PC CY27H010-55Wmb 27H010 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization


    OCR Scan     		CY27H512 28-pin 28-pin, 600-mil 32-pin CY27H512 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C286 CY7C287 CYPRESS 65,536 x 8 Reprogrammable SEMICONDUCTOR Asynchronous/Registered PROMs Features Functional Description The CY7C286 and the CY7C287 are high-perfbrmance 65,536 by 8-bit CMOS PROMs. The CY7C286 is configured in the JEDEC-standard S12K EPROM pin­


    OCR Scan     		CY7C286 CY7C287 CY7C286 CY7C287 28-pin, 600-mil 7C286) PDF