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    Gates 14MX-168S-90

    Poly Chain GT Sprocket, 14MM | Gates 14MX-168S-90
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    Gates 14MX-168S-37

    Poly Chain GT Sprocket, 14MM | Gates 14MX-168S-37
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    Gates 14MX-168S-20

    Poly Chain GT Sprocket, 14MM | Gates 14MX-168S-20
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    Gates 14MX-168S-68

    Poly Chain GT Sprocket, 14MM | Gates 14MX-168S-68
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    Martin Sprocket & Gear Inc F14MX168S20-F

    Poly Chain Sprocket, MPC, QD bushed F, 14MM belt, 20MM belt width, 168 teeth | Martin Sprocket & Gear F14MX168S20-F
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    RS F14MX168S20-F Bulk 6 Weeks 1
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    4MX16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S641633F

    Abstract: No abstract text available
    Text: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S641633F-R 4Mx16 54CSP 16Bit K4S641633F

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    K4S64163LF

    Abstract: No abstract text available
    Text: K4S64163LF-R B G/S CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)G/S CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-R 4Mx16 54CSP 16Bit K4S64163LF

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report

    BFR15

    Abstract: No abstract text available
    Text: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-R 4Mx16 54CSP 16Bit K4S64163LF BFR15

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and


    Original     		PDF 168PIN PC100 TS4MLS64V8Z TS4MLS64V8Z PC-100 4Mx16 400mil 168-pin

    M366S0824ET0

    Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
    Text: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M366S0824ET0 M366S0824ET0 8Mx64 4Mx16, 400mil 168-pin M366S0824ET0-C1H M366S0824ET0-C1L

    EDI4164MEV50SM

    Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
    Text: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns


    Original     		PDF EDI4164MEV-RP 4Mx16 EDI4164MEV50SM EDI4164MEV60SM EDI4164MEV70SM EDI4164MEV50SI EDI4164MEV60SI EDI4164MEV70SI EDI4164MEV50SM EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI

    HYM76V4M655HGLT6-8

    Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
    Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF PC100 4Mx16 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYM76V4M655HGLT6-8 HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S

    Enhanced SDRAM

    Abstract: No abstract text available
    Text: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC


    Original     		PDF 64Mbit 4Mx16 SM2603T-6 SM2604T-6 SM2603T-7 SM2604T-7 SM2603T-10 SM2604T-10 54-pin Enhanced SDRAM

    SM2603

    Abstract: No abstract text available
    Text: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz


    Original     		PDF 64Mbit 4Mx16 16Kbit 166MHz SM2603T-6 SM2604T-6 SM2603T-7 SM2604T-7 SM2603T-10 SM2604T-10 SM2603

    SM3603

    Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
    Text: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster


    Original     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 SM3603T-7 54-pin SM3604T-7 Enhanced Memory Systems 8mx8

    Untitled

    Abstract: No abstract text available
    Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


    Original     		PDF 1000B-TC 64M-Bit /4Mx16) 100ns 120ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 4Mx64 PC100 4Mx16 HYM76V4655HGT6 4Mx64bits 4x16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: UG2M43204 8 RTG(T) 16M Bytes (4M x 32) 72Pin SIMM based on 4M X 16 DRAM General Description Features The UG2M43204(8)RTG(T) is a 4,194,304 bits by 32 SIMM module. The UG2M43204(8)RTG(T) is assembled using 2 pcs of 4Mx16 5V 4K/8K refresh DRAM in 50 Pin TSOP package mounted on a 72 Pin


    Original     		PDF UG2M43204 72Pin 4Mx16

    JEP-106

    Abstract: JEP106 mitsubishi year code mitsubishi date code MH4V644AXJJ MH4V644AXJJ-5 MH4V644AXJJ-6 MH4V64AXJJ MH4V64AXJJ-5 MH4V64AXJJ-6
    Text: MITSUBISHI LSIs Preliminary Some of contents are subject to change without notice. MH4V64/644AXJJ-5,-6,-5S,-6S FAST PAGE MODE 268435456-BIT 4194304-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION ADDRESS This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic


    Original     		PDF MH4V64/644AXJJ-5 268435456-BIT 4194304-WORD 64-BIT 4Mx16 MH4V64AXJJ-5 MH4V64AXJJ MH4V644AXJJ MIT-DS-0072-0 26/Feb JEP-106 JEP106 mitsubishi year code mitsubishi date code MH4V644AXJJ MH4V644AXJJ-5 MH4V644AXJJ-6 MH4V64AXJJ MH4V64AXJJ-6

    NT56V6610C0T-8A

    Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


    Original     		PDF NT56V6610C0T NT56V6620C0T PC133 PC100 4Mx16) NT56V6610C0T-8A nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A

    DIMM 1999

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424CT0-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4


    Original     		PDF PC100 168pin) M366S0424CT0-C80/C1H/C1L 4Mx64 4Mx16 K4S641632C-TC80/C1H/C1L 375mil 4K/64ms DIMM 1999

    Untitled

    Abstract: No abstract text available
    Text: M366S0424DTS PC100 Unbuffered DIMM M366S0424DTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0424DTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S0424DTS PC100 M366S0424DTS 4Mx64 4Mx16, 400mil 168-pin

    TAA 293

    Abstract: No abstract text available
    Text: SMART SM5360830U4Q6UU Modular Technologies July 14, 1997 32MByte 8M x 36 DRAM Module - 4Mx16 based 72-pin SIMM with Level Translators Features Part Numbers • • • • • • • • • • SM5360830F4Q6UU SM5360830E4Q6UU Configuration : Parity


    Original     		PDF SM5360830U4Q6UU 32MByte 4Mx16 72-pin SM5360830F4Q6UU SM5360830E4Q6UU 50/60/70ns 400mil AMP-7-382486-2 AMP-822019-4 TAA 293

    Untitled

    Abstract: No abstract text available
    Text: M464S0424FTS PC133/PC100 SODIMM M464S0424FTS SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424FTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    Original     		PDF M464S0424FTS PC133/PC100 M464S0424FTS 4Mx64 4Mx16, 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: SMART SM5720830U4Y6GU Modular Technologies Preliminary 64MByte 8M x 72 DRAM Module - 4Mx16, 4Mx4 based 168-pin DIMM, Non-buffered, Parity Features Part Numbers • • • • • • • • • • • SM572083014Y6GU SM572083194Y6GU Standard : JEDEC


    Original     		PDF SM5720830U4Y6GU 64MByte 4Mx16, 168-pin SM572083014Y6GU SM572083194Y6GU 50/60/70ns 400mil AMP-390052-6 4Mx18

    Untitled

    Abstract: No abstract text available
    Text: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The


    OCR Scan     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 3603T-7 54-pin 3604T-7