AT45DB081D
Abstract: JEP106 PA10 PA11 AT45DB081D-MU-SL954
Text: Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency • • • • • • • • • • • • • • – SPI Compatible Modes 0 and 3 User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page
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66MHz
256-Bytes
264-Bytes
256-Bytes
256/264-Bytes/Page)
256-Bytes)
64-Kbytes)
256-/264-Bytes)
3596M
AT45DB081D
JEP106
PA10
PA11
AT45DB081D-MU-SL954
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Untitled
Abstract: No abstract text available
Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)
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S29NS-R
S29NS01GR,
S29NS512R,
S29NS256R,
S29NS128R
S29NS512P
S29NS512R.
S29VS256R
S29VS128R
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ic ap 6928
Abstract: sam4l SENSE16 10v regulator 7910 c QFN64 0x400A0000 swdp B-0100 embedded c programming of fibonacci series pulse width modulation tester diagram
Text: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling
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256Kbytes
64-bit
42023BS
ic ap 6928
sam4l
SENSE16
10v regulator 7910 c
QFN64
0x400A0000
swdp
B-0100
embedded c programming of fibonacci series
pulse width modulation tester diagram
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energy tapping identifier wireless data acquisition
Abstract: interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram
Text: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling
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256Kbytes
64-bit
42023B
energy tapping identifier wireless data acquisition
interpolation CIC Filter
iso 7811-9
sine wave pwm circuit
pec 4179
Isdi cmos sensor
edp 2339
ARM926EJ
atmel sam4l
ram schematic diagram
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TM4SN64EPN10
Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •
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TM2SN64EPN
64-BIT
TM4SN64EPN
SMMS696
TM2SN64EPN.
TM4SN64EPN
66-MHz
168-Pin
TM4SN64EPN10
TM2SN64EPN-10
TM48N64EPN
TM4SN64EPN-10
TMS626812
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.
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THMY644071EG-10
304-WORD
64-BIT
THMY644071EG
TC59S6416FT
THMY644071
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r2a3
Abstract: r1a10 M1367 M4589
Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.
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THMY728010BEG-80L
THMY728010BEG
608-word
72-bit
TC59S6408BFTL
72-bit
r2a3
r1a10
M1367
M4589
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2269H
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
THMY7216C1EG)
2269H
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TCK-1000
Abstract: D038 toshiba M7
Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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Y6480F1
BEG-80
64-BIT
THMY6480F1BEG
608-word
TC59S6408BFT
64-bit
THMY6480F1
TCK-1000
D038
toshiba M7
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Untitled
Abstract: No abstract text available
Text: TM4EN64KPU, TM4EN64NPU 4194304 BY 64-BIT TM8EN64KPU, TM8EN64NPU 8388608 BY 64-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS692 - AUGUST 1997 Organization - TM4EN64xPU-xx . , . 4194304 x 64 Bits - TM8EN64xPU-xx . . . 8388608 x 64 Bits
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TM4EN64KPU,
TM4EN64NPU
64-BIT
TM8EN64KPU,
TM8EN64NPU
SMMS692
TM4EN64xPU-xx
TM8EN64xPU-xx
168-Pln
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Untitled
Abstract: No abstract text available
Text: TM8SR64JPU, TM16SR64JPU TM8SR72JPU, TM16SR72JPU SYNCHRONOUS DYNAMIC RAM MODULES SMMS688 - AUGUST 1997 Organization: - TM8SR64JPU . . . .8 388 608 x 64 Bits - TM16SR64JPU . . 16 777 216 x 64 Bits - TM8SR72JPU . . . .8 388 608 x 72 Bits - TM16SR72JPU . . 16 777 216 x 72 Bits
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TM8SR64JPU,
TM16SR64JPU
TM8SR72JPU,
TM16SR72JPU
SMMS688
xSRxxJPU-10
xSRxxJPU-12
TM8SR64JPU
64M-byte,
168-pin
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tfk 136
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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THMY6416C1BEG-80L
216-WORD
64-BIT
THMY6416C1BEG
TC59S6408BFT
64-bit
THMY6416C1BEG)
tfk 136
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.
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THMY6480D1BEG-80L
THMY6480D1BEG
608-word
64-bit
TC59S6408BFTL
64-bit
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D018
Abstract: D019 D032
Text: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51E10C70
THMY51E10C70,
THMY51E10C75,
THMY51E10C80
864-word
72-bit
TC59SM804CFT
D018
D019
D032
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THMY25E10C70
Abstract: No abstract text available
Text: TOSHIBA THMY25E10C70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E10C is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808CFT DRAMs and PLL/Registers on a printed circuit board.
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THMY25E10C70
432-WORD
72-BIT
THMY25E10C
TC59SM808CFT
72-bit
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D018
Abstract: D019 D032 D051 THMY51E10B70
Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
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THMY51E10B70
864-WORD
72-BIT
THMY51E10B
TC59SM804BFT
72-bit
aY51E10B70
D018
D019
D032
D051
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Untitled
Abstract: No abstract text available
Text: TO SH IB A THLY648031 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT/BFTL DRAMs on a printed circuit board.
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THLY648031
608-WORD
64-BIT
THLY648031BFG
TC59S6408BFT/BFTL
144-pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.
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THMY721661
BEG-80
216-WORD
72-BIT
THMY721661BEG
TC59S6408BFT/BFTL
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 7 2 8 0 F 1 B E G is a 8,3 8 8 ,6 0 8 -w o rd by 7 2 -b it synchronous dynam ic RAM module consisting of
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THMY7280F1
BEG-80
608-WORD
72-BIT
ililo11
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6440F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440F1BEG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6440F1
BEG-80
304-WORD
64-BIT
THMY6440F1BEG
TC59S6416BFT
64-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY7280F1
BEG-80
72-BIT
THMY7280F1BEG
608-word
TC59S6408BFT
72-bit
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Untitled
Abstract: No abstract text available
Text: TO SH IB A THMY728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY728071BEG-80
72-BIT
THMY728071BEG
608-word
TC59S6408BFT/BFTL
72-bit
THMY728071BEG)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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PDF
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THMY6480F1
BEG-80
608-WORD
64-BIT
THMY6480F1BEG
TC59S6408BFT
64-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7280D1EG-80H
72-BIT
THMY7280D1EG
608-word
TC59S6408FT
72-bit
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