4C1M16 Search Results
4C1M16 Price and Stock
Alliance Memory Inc AS4C1M16S-7TCNIC DRAM 16MBIT PAR 50TSOP II |
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AS4C1M16S-7TCN | Tray | 137 | 1 |
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AS4C1M16S-7TCN | Tray | 12 Weeks | 117 |
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AS4C1M16S-7TCN | 194 |
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AS4C1M16S-7TCN | Bulk | 65 | 1 |
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AS4C1M16S-7TCN | 1 |
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AS4C1M16S-7TCN | 83,518 |
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AS4C1M16S-7TCN | 13 Weeks | 117 |
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Alliance Memory Inc AS4C1M16S-6TCNIC DRAM 16MBIT PAR 50TSOP II |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AS4C1M16S-6TCN | Tray | 110 | 1 |
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AS4C1M16S-6TCN | Tray | 12 Weeks | 117 |
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AS4C1M16S-6TCN | 370 |
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AS4C1M16S-6TCN | Bulk | 117 |
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AS4C1M16S-6TCN | 91 | 1 |
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AS4C1M16S-6TCN | 1,318 |
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AS4C1M16S-6TCN | 13 Weeks | 117 |
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Alliance Memory Inc AS4C1M16S-6TINIC DRAM 16MBIT PAR 50TSOP II |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AS4C1M16S-6TIN | Tray | 7 | 1 |
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AS4C1M16S-6TIN | Tray | 12 Weeks | 117 |
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AS4C1M16S-6TIN | 115 |
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AS4C1M16S-6TIN | Bulk | 117 |
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AS4C1M16S-6TIN | 7 |
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AS4C1M16S-6TIN | 1 |
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AS4C1M16S-6TIN | 103,638 |
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AS4C1M16S-6TIN | 13 Weeks | 117 |
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Alliance Memory Inc AS4C1M16S-6TINTRIC DRAM 16MBIT PAR 50TSOP II |
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AS4C1M16S-6TINTR | Reel | 1,000 |
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AS4C1M16S-6TINTR | Reel | 12 Weeks | 1,000 |
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AS4C1M16S-6TINTR |
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AS4C1M16S-6TINTR | Reel | 1,000 |
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AS4C1M16S-6TINTR | 52,000 |
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AS4C1M16S-6TINTR | 13 Weeks | 1,000 |
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AS4C1M16S-6TINTR | 744 | 1 |
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Alliance Memory Inc AS4C1M16S-7TCNTRIC DRAM 16MBIT PAR 50TSOP II |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AS4C1M16S-7TCNTR | Reel | 1,000 |
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AS4C1M16S-7TCNTR | Reel | 12 Weeks | 1,000 |
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AS4C1M16S-7TCNTR |
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AS4C1M16S-7TCNTR | Reel | 1,000 |
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AS4C1M16S-7TCNTR | 2,000 |
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AS4C1M16S-7TCNTR | 13 Weeks | 1,000 |
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4C1M16 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: H igh Performance 1MX16 CMOS DRAM •■ II 4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0 |
OCR Scan |
1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0 | |
16F5
Abstract: 4c1m16
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OCR Scan |
16E0-60) ZDDQ15 ZDDQ11 ZDDQ10 A54C1M16FS 42-pin -60JC AS4C1M16F5-50JC AS4C1M16F5 16F5 4c1m16 | |
4lc1m16e5-6Contextual Info: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al |
OCR Scan |
16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6 | |
4LC1M16E5
Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
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OCR Scan |
AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5 | |
Contextual Info: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write |
OCR Scan |
16E0-60) 42-pin 71pS4C AS4C1M16E5-60JC 1M16E0 42-pin | |
T835Contextual Info: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e |
OCR Scan |
AS4C1M16E0 AS4LC1M16E0 16E0-60JC I6E0-60JC 42-pin 16E0-70JC IM16E0 T835 | |
4C1M16E5
Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
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Original |
AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) 4C1M16E5 AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1 | |
Contextual Info: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0 |
OCR Scan |
AS4LC1M16EÃ 42-pin 4C1M16EO-SO) | |
4C1M16
Abstract: 1MX16 4LC1M16
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OCR Scan |
1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16 | |
AS4C1M16ES
Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60
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OCR Scan |
AS4C1M16E5 1MX16 4C1M16E0-60) 42-pin 12S4C1M16E5 Capacitance15 42-pin AS4C1M16E5-60JC 1M16E0 AS4C1M16ES 4C1M16E5 LR 3441 AS4C1M16E5 LMZ 9 4C1M16E5-60 | |
4LCIM16E5-50
Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000
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OCR Scan |
42-pin 4C1M16E5) 50-pin 4LC1M16E5) 4C1M16E5-60) 4LC1M16E5-60) AS4C1M16E5) AS4LC1M16E5) -60JC 16E5-50JC 4LCIM16E5-50 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000 | |
Contextual Info: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh |
OCR Scan |