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    ZDDQ11 Search Results

    ZDDQ11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16F5

    Abstract: 4c1m16
    Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh


    OCR Scan     		PDF 16E0-60) ZDDQ15 ZDDQ11 ZDDQ10 A54C1M16FS 42-pin -60JC AS4C1M16F5-50JC AS4C1M16F5 16F5 4c1m16

    16C256

    Abstract: KM416C256DJ
    Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 1C256D 256Kx16 40SOJ KM416C256DJ 16C256 KM416C256DJ

    Untitled

    Abstract: No abstract text available
    Text: K M 4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 256Kx16 16C256DJ 40SOJ KM416C256DJ 7Rb414H

    31DQ8

    Abstract: 31DQ14 3DA10 31DQ12
    Text: KM416C4004B, KM416C4104 B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this


    OCR Scan     		PDF KM416C4004B, KM416C4104 16bit 4Mx16 KM416C4004B KM416C4104B tAsc26ns, tRASS2l00u8, 31DQ8 31DQ14 3DA10 31DQ12

    4mx16 edo

    Abstract: No abstract text available
    Text: KM416V4Q04B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power corvsumption{Normal


    OCR Scan     		PDF KM416V4Q04B, KM416V4104B 16bit 4Mx16 4mx16 edo

    Untitled

    Abstract: No abstract text available
    Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 256Kx16 KM416V256DJ 0G322tM QG322bS 7Tb4142 00322bfci