CAPACITANCE15 Search Results

A416316B

Contextual Info: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0

A426316B

Abstract: A426316BS A426316BV
Contextual Info: A426316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0

Contextual Info: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O

CY7C4261

Abstract: CY7C4271 CY7C4271-15LMB IDT72201 n25l
Contextual Info: fax id: 5412 - CY7C4261 V CYPRESS CY7C4= 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

A416316AS-40

Contextual Info: A416316A Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue September 7, 1999 Preliminary 0.1 Change ICC7 test condition from “all other input high levels

Contextual Info: BURR-BROW N w m m DAC8043 M CMOS 12-Bit Serial Input Mulitplying DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • 12-BIT ACCURACY IN 8-PIN MINI-DIP AND 8-PIN SOIC • FAST 3-WIRE SERIAL INTERFACE • AUTOMATIC CALIBRATION • MOTION CONTROL • LOW INL AND DNL: ±1/2 LSB max

Contextual Info: DAC8012 B U R R -B R O W N I 1 SP* CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTER With Memory FEATURES • • • • • • • • i n p u t d a t a is lo a d e d i n t o th e D A C a s a 1 2 -b it d a t a w o r d . T h e d a t a is lo a d e d i n t o t h e D A C f r o m th e b u s

Contextual Info: CY7C106 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 4 Static R /W RAM Features Functional Description • High speed - U à = 25 ns T he CY7C106 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable

ATA 2388

Contextual Info: CY7B193 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • H igh speed T h e CY7B193 is a high-perform ance BiCM OS static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is provided by an active L O W chip enable

CYM1421

Contextual Info: CYM1421 CYPRESS . . SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • H igh-density 1-m egabit SRAM m odule T he CYM1421 is a high-performance 1-megabit static R A M m odule organized as 128K words by 8 bits. T he module is

Contextual Info: Panasonic Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 60mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 80ns No secondary breakdown 15.0+0.3 11 . 0 + 0.2

ga1000

Contextual Info: s CO M PU TIN G AND e m I c o n D U S1 T 0 R , I N C NETW ORKING Figure 1. Block Diagram FBIN C C LK SO NC NC GN D GA1086 11-Output Clock Buffer Features * Operates from 30 MHz to 67 MHz a Pin-to-pin output skew of 250ps max * Period-to-period jitter: 75 ps (typ)

Contextual Info: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write

Contextual Info: H igh Perform ance 2M x8 CMOS DRAM II ; AS4C2M8E0 AS4T.C2M8E0 II 2M X 8 CMOS EDO DRAM Prelim inary inform ation Features • O r g a n iz a tio n : 2 ,0 9 7 ,1 5 2 w o r d s x 8 b its • R e a d - m o d ify -w r ite • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s ta te 1 / O

edo ram

Contextual Info: A426316 Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 Preliminary History Issue Date Remark Initial issue October 20, 1998 Preliminary October, 1998, Version 0.0

A72Pq

Abstract: VARISTOR 275 L20 CORE F5A FC102 PME261KE6470 747I1330 63D14 1510AH SMR10105 SMPS 265
Contextual Info: Film Capacitors General Purpose, Pulse and DC Transient Suppression General Purpose, Pulse and DC Transient Suppression One world. One KEMET. Film Capacitors General Purpose, Pulse and DC Transient Suppression Table of Contents Page Why Choose KEMET. 3

IMS1403P-55

Abstract: B 1403 N s1403 IMS1403P-25 TWL01 IMS1403LM IMS1403M IMS1403P-35 IMS1403S-25 IMS1403S-35
Contextual Info: IMS1403 CMOS High Performance 16K x 1 Static RAM o^m os1 D E S C R IP T IO N FEATURES • • • • • • • • • • • The INMOS 1MS1403 is a high performance 16K x 1 CMOS Static RAM. The IMS1403 provides maximum density and speed enhancements with the additional

Contextual Info: C*yppucc CY7B163 Expandable 262,144 x 1 Static R/W RAM with Separate I/O ADVANCED INFORMATION SEMICONDUCTOR Features • High speed - 12 ns • Five chip enables C E |, j ,j and CE4,5 to expand memory • BiCMOS for optimum speed/power • Low active power

7B154

Contextual Info: CY7B153 CY7B154 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Expandable 65,536 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7B 153 a n d C Y 7 B 1 5 4 a rc h ig h -p e r­ fo rm a n c e B iC M O S s ta tic R A M s o rg a n iz e d

Z3CS

Abstract: 32TSOP
Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128K x8 bit Low Power and Low voltage CMOS static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 >m CMOS • Organization: 128KX8 • Power Supply Voltage : KM68V1000C fam ily: 3.3VK3.3V KM68U1OOOC family : 3.0V±0.3V

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

XC167CI

Abstract: XC164CM C166 C166SV2 SAK-XC167CI-32F20F SAK-XC167CI-32F40F XC166 XC167 XC167CI-32 XC167CI-32F
Contextual Info: Data Sheet, V1.1, Aug. 2006 XC167CI-32F 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer

Contextual Info: CYM1421 -128K x 8 Static RAM Module CYPRESS •— SEMICONDUCTOR Features Functional Description • High-density 1-megabit SRAM module The CYM1421 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. The module is constructed using four 32K * 8 static

Contextual Info: A416316B Series 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue November 15, 2000 Preliminary 1.0 Final version release September 29, 2003