A416316B
Abstract: No abstract text available
Text: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0
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A416316B
400mil,
40-pin
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A426316B
Abstract: A426316BS A426316BV
Text: A426316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0
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A426316B
400mil,
40-pin
A426316BS
A426316BV
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A416316AS-40
Abstract: No abstract text available
Text: A416316A Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue September 7, 1999 Preliminary 0.1 Change ICC7 test condition from “all other input high levels
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A416316A
A416316AS-40
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A416316S-40
Abstract: AT7370
Text: A416316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 06, 1998 Preliminary 0.1 Modify 40/44L TSOP type II package outline drawing and
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A416316
40/44L
40/44L
A416316S-40
AT7370
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edo ram
Abstract: No abstract text available
Text: A426316 Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 Preliminary History Issue Date Remark Initial issue October 20, 1998 Preliminary October, 1998, Version 0.0
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A426316
160mA
edo ram
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A72Pq
Abstract: VARISTOR 275 L20 CORE F5A FC102 PME261KE6470 747I1330 63D14 1510AH SMR10105 SMPS 265
Text: Film Capacitors General Purpose, Pulse and DC Transient Suppression General Purpose, Pulse and DC Transient Suppression One world. One KEMET. Film Capacitors General Purpose, Pulse and DC Transient Suppression Table of Contents Page Why Choose KEMET. 3
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FC102
15bis
A72Pq
VARISTOR 275 L20
CORE F5A
FC102
PME261KE6470
747I1330
63D14
1510AH
SMR10105
SMPS 265
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XC167CI
Abstract: XC164CM C166 C166SV2 SAK-XC167CI-32F20F SAK-XC167CI-32F40F XC166 XC167 XC167CI-32 XC167CI-32F
Text: Data Sheet, V1.1, Aug. 2006 XC167CI-32F 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer
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XC167CI-32F
16-Bit
C166SV2
XC167
XC167,
XC167CI
XC164CM
C166
SAK-XC167CI-32F20F
SAK-XC167CI-32F40F
XC166
XC167CI-32
XC167CI-32F
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Untitled
Abstract: No abstract text available
Text: A416316B Series 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue November 15, 2000 Preliminary 1.0 Final version release September 29, 2003
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A416316B
A416316B-L
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Untitled
Abstract: No abstract text available
Text: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O
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24/26-pin
24/26-p
E0-60JC
AS4LC4M4E0-50TC
AS4LC4M4E0-60TC
U-30004-A.
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CY7C4261
Abstract: CY7C4271 CY7C4271-15LMB IDT72201 n25l
Text: fax id: 5412 - CY7C4261 V CYPRESS CY7C4= 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle
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CY7C4261)
CY7C4271)
100-MHz
CY7C4271-15LMB
32-pin
CY7C4261
CY7C4271
CY7C4271-15LMB
IDT72201
n25l
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Untitled
Abstract: No abstract text available
Text: BURR-BROW N w m m DAC8043 M CMOS 12-Bit Serial Input Mulitplying DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • 12-BIT ACCURACY IN 8-PIN MINI-DIP AND 8-PIN SOIC • FAST 3-WIRE SERIAL INTERFACE • AUTOMATIC CALIBRATION • MOTION CONTROL • LOW INL AND DNL: ±1/2 LSB max
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DAC8043
12-Bit
DAC8043
5M-1982.
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Untitled
Abstract: No abstract text available
Text: DAC8012 B U R R -B R O W N I 1 SP* CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTER With Memory FEATURES • • • • • • • • i n p u t d a t a is lo a d e d i n t o th e D A C a s a 1 2 -b it d a t a w o r d . T h e d a t a is lo a d e d i n t o t h e D A C f r o m th e b u s
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DAC8012
12-Bit
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Untitled
Abstract: No abstract text available
Text: CY7C106 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 4 Static R /W RAM Features Functional Description • High speed - U à = 25 ns T he CY7C106 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable
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CY7C106
CY7C106
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ATA 2388
Abstract: No abstract text available
Text: CY7B193 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • H igh speed T h e CY7B193 is a high-perform ance BiCM OS static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is provided by an active L O W chip enable
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CY7B193
CY7B193
ATA 2388
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Untitled
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 60mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 80ns No secondary breakdown 15.0+0.3 11 . 0 + 0.2
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2SK1803
capacitance155'
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ga1000
Abstract: No abstract text available
Text: s CO M PU TIN G AND e m I c o n D U S1 T 0 R , I N C NETW ORKING Figure 1. Block Diagram FBIN C C LK SO NC NC GN D GA1086 11-Output Clock Buffer Features * Operates from 30 MHz to 67 MHz a Pin-to-pin output skew of 250ps max * Period-to-period jitter: 75 ps (typ)
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GA1086
11-Output
250ps
-350psÂ
500ps
-350ps
A1086
ga1000
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Untitled
Abstract: No abstract text available
Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write
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S4C14405
26/20-pin
AS4C14405-60JC
26/20-pin
0Q34HC
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Untitled
Abstract: No abstract text available
Text: H igh Perform ance 2M x8 CMOS DRAM II ; AS4C2M8E0 AS4T.C2M8E0 II 2M X 8 CMOS EDO DRAM Prelim inary inform ation Features • O r g a n iz a tio n : 2 ,0 9 7 ,1 5 2 w o r d s x 8 b its • R e a d - m o d ify -w r ite • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s ta te 1 / O
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AS4LC2M8E0-60JC
AS4-C2M8E0-60JC
AS4LC2M8E0-70
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IMS1403P-55
Abstract: B 1403 N s1403 IMS1403P-25 TWL01 IMS1403LM IMS1403M IMS1403P-35 IMS1403S-25 IMS1403S-35
Text: IMS1403 CMOS High Performance 16K x 1 Static RAM o^m os1 D E S C R IP T IO N FEATURES • • • • • • • • • • • The INMOS 1MS1403 is a high performance 16K x 1 CMOS Static RAM. The IMS1403 provides maximum density and speed enhancements with the additional
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IMS1403
20-Pin,
300-mil
20-Pin
1MS1403
IMS1403
IMS1403P-55
B 1403 N
s1403
IMS1403P-25
TWL01
IMS1403LM
IMS1403M
IMS1403P-35
IMS1403S-25
IMS1403S-35
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Untitled
Abstract: No abstract text available
Text: C*yppucc CY7B163 Expandable 262,144 x 1 Static R/W RAM with Separate I/O ADVANCED INFORMATION SEMICONDUCTOR Features • High speed - 12 ns • Five chip enables C E |, j ,j and CE4,5 to expand memory • BiCMOS for optimum speed/power • Low active power
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CY7B163
CCY7B163-20VC
CY7B163-20DC
CY7B163-20LC
CY7B163-20DMB
CY7B163-20LMB
CY7B163
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7B154
Abstract: No abstract text available
Text: CY7B153 CY7B154 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Expandable 65,536 x 4 Static R/W RAM Features Functional Description • High speed T h e C Y 7B 153 a n d C Y 7 B 1 5 4 a rc h ig h -p e r fo rm a n c e B iC M O S s ta tic R A M s o rg a n iz e d
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CY7B153
CY7B154
7B154
7B153
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Z3CS
Abstract: 32TSOP
Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128K x8 bit Low Power and Low voltage CMOS static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 >m CMOS • Organization: 128KX8 • Power Supply Voltage : KM68V1000C fam ily: 3.3VK3.3V KM68U1OOOC family : 3.0V±0.3V
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KM68V1000C,
KM68U1000C
128KX8
KM68V1000C
KM68U1OOOC
32-SOP-525,
32-TSOP1-0820F/R,
32-TSOP1-OB13
KM68U1Q00C
Z3CS
32TSOP
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la 76805 volt on pin
Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Text: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4
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MCS-4/40â
MCS-48â
MCS-80/85â
-883B
la 76805 volt on pin
intel 8708 eprom
M3002
Pulse M3001
eprom 8708
2316a rom
UPP-103
interfacing 8275 crt controller with 8086
intel 1402a
Pascall
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Untitled
Abstract: No abstract text available
Text: CYM1421 -128K x 8 Static RAM Module CYPRESS •— SEMICONDUCTOR Features Functional Description • High-density 1-megabit SRAM module The CYM1421 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. The module is constructed using four 32K * 8 static
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32-pin,
CYM1421
----128K
CYM1421
CYM1421HD-70C
CYM1421LHD-70C
CYM1421HD-85C
CYM1421LHD-85C
38-M-00002-A
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