Untitled
Abstract: No abstract text available
Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write
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S4C14405
26/20-pin
AS4C14405-60JC
26/20-pin
0Q34HC
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1I-3Q006-A
Abstract: No abstract text available
Text: H i <; li IV !'t <>r ! 11.! r !M > • \io s D l: 4 Ii S A : M A l C M O S U Ù UK. , M Prelim inary inform ation Features • Organization: 1,048,576 words x 4 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh
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6/20-p
AS4C14405-60JC
26/20-pinSQ
U-30006-A.
1I-3Q006-A
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zl24
Abstract: No abstract text available
Text: H iy h P e r f o r m a n t e n AS4CI440S il. IMX- I H CMOS DRAM H X 4 C MO S l'D O DRAM Advance information Features • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 4 bits • H igh speed • 1024 refresh cycles, 16 m s refresh interval - RA S-only o r CAS-before-RAS re fresh
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AS4CI440S
S4C1440S
zl24
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Untitled
Abstract: No abstract text available
Text: H igh Perform ance lMx4 CMOS DRAM |B S4C14405 A ! M x 4 CMOS EDO DRAM Preliminary information Features • O r g a n iz a t io n : 1 , 0 4 8 , 5 7 6 w o r d s x 4 b its • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in t e r v a l • H ig h sp e ed
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AS4C14405
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