CY7B193 Search Results

ATA 2388

Contextual Info: CY7B193 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • H igh speed T h e CY7B193 is a high-perform ance BiCM OS static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is provided by an active L O W chip enable

Contextual Info: CY7B193 PRELIMINARY CYPRESS SEMICONDUCTOR 2 5 6 K x l Static R/W RAM Features Functional Description • Highspeed — Iaa = 12 ns • BiCMOS for optimum speed/power • Low active power — 60S mW • Low standby power — 275 raW • Automatic power-down when

cy7b193

Contextual Info: CY7B193 PRELIMINARY SEMICONDUCTOR 256K x 1 Static R/W RAM Features Functional Description • H ig h sp eed — I aa = 12 ns T he CY7B193 is a high-perform ance BiC M O S static R A M organized as 256K w ords by 1 bit. Easy m em ory expansion is provided by an active LO W chip e nable

Contextual Info: CY7B193 AD VAN CED INFORM ATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • High speed T h e C Y 7D 193 is a h ig h -p e rfo rm a n c e B iC M O S static R A M o rg a n iz e d as 262,144 w ords by 1 bit. E a sy m e m o ry e x p a n sio n is

24PIN

Abstract: CY7B193-12 CY7B193-15 CY7B193-20 CY7B197-12 CY7B197-15 CY7B197-20 EDI81256C-35 24PIN 1800 Hitachi Scans-001
Contextual Info: - 106 2 5 6 K m t, tt £ ïSKiÊSl CC X TAAC max ns) TCAC max (ns) CMOS 4 7 TOE max (ns) TOH (ns) / f TOD max (ns) S t a t i c RAM (2 6 2 14 4 x 1 ) 7' i l t t TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) ma ÏÏI3X (ns i V D D or V C C (V) 2 4 P I N