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Infineon Technologies AG IHW40N140R5LXKSA1 IGBT 1400V 80A TO247-44
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IHW40N140R5LXKSA1	Tube	166		1	1 $5.12 10 $5.12 100 $2.86567 1000 $2.00618 10000 $1.88787	Buy Now
Avnet Americas	IHW40N140R5LXKSA1	Tube	240	19 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IHW40N140R5LXKSA1		23			1 $4.52 10 $4.06 100 $2.26 1000 $1.88 10000 $1.88	Buy Now
Newark	IHW40N140R5LXKSA1	Bulk	38		1	1 $5.16 10 $4.83 100 $3.89 1000 $3.63 10000 $3.63	Buy Now
EBV Elektronik	IHW40N140R5LXKSA1			20 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG T640N14TOFXPSA1 SCR MODULE 1800V 1250A DO200AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T640N14TOFXPSA1	Tray	6		1	1 $126.82 10 $126.82 100 $109.6875 1000 $109.6875 10000 $109.6875	Buy Now
Avnet Americas	T640N14TOFXPSA1	Tray		24 Weeks	12	1 - 10 - 100 $121.9725 1000 $121.9725 10000 $121.9725	Buy Now
Newark	T640N14TOFXPSA1	Bulk			1	1 $121.75 10 $116.64 100 $114.08 1000 $114.08 10000 $114.08	Buy Now
EBV Elektronik	T640N14TOFXPSA1			25 Weeks	12	1 - 10 - 100 - 1000 - 10000 -	Buy Now
JRH Electronics 380FS040N14 CONN BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	380FS040N14	Bulk			1	1 $765.37 10 $765.37 100 $765.37 1000 $765.37 10000 $765.37	Buy Now
Infineon Technologies AG T940N14TOFXPSA1 SCR MODULE 1800V 1759A DO200AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T940N14TOFXPSA1	Tray			9	1 - 10 $209.04889 100 $209.04889 1000 $209.04889 10000 $209.04889	Buy Now
Avnet Americas	T940N14TOFXPSA1	Tray			9	1 - 10 - 100 - 1000 - 10000 -	Get Quote
PEPPERL+FUCHS GmbH TVI40N-14TK2T6TN-00500 INCREMENTAL ROTARY ENCODER(NON-S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TVI40N-14TK2T6TN-00500	Box			1	1 $221.61 10 $221.61 100 $221.61 1000 $221.61 10000 $221.61	Buy Now
Newark	TVI40N-14TK2T6TN-00500	Bulk			1	1 $266.23 10 $247.22 100 $219.42 1000 $219.42 10000 $219.42	Buy Now
RS	TVI40N-14TK2T6TN-00500	Bulk			1	1 $247.93 10 $241.73 100 $241.73 1000 $241.73 10000 $241.73	Get Quote

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40N14 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: High Voltage BIMOSFETTM IXBH 40N140 VCES IXBH 40N160 Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode = = = = IC25 VCE sat tfi 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C	Original	PDF	40N140 40N160 O-247 40N140 IXBH40 D-68623
40N160 Abstract: 40N140 Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 28 A 1400/1600 V 6.2 V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C	Original	PDF	40N140 40N160 40N140 40N160 IXBF40
BiMOSFET Abstract: 40N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C G C E E Symbol Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	40N140 40N160 O-268 40N160 O-268 IXBH40N160 BiMOSFET
IXBH 40N160 Abstract: No abstract text available Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings	Original	PDF	40N140 40N160 O-247 40N160 IXBH40 IXBH 40N160
40N140 Abstract: 40N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings	Original	PDF	40N140 40N160 O-247 IXBH40 40N140 40N160
40N160 Abstract: IXBF 40N140 IXBF 40N160 40N140 Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C	Original	PDF	40N140 40N160 40N140 40N160 IXBF40 IXBF 40N140 IXBF 40N160
40N14 Abstract: No abstract text available Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C	Original	PDF	40N140 40N160 40N160 40N14
40N140 Abstract: 40N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C	Original	PDF	40N140 40N160 O-268 IXBH40 40N140 40N160
IXBH 40N160 Abstract: IXBJ 40N160 40N140 40N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C	Original	PDF	40N140 40N160 O-268 IXBH40 IXBH 40N160 IXBJ 40N160 40N140 40N160
RAS 0510 SUN HOLD Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.	Original	PDF	mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
Untitled Abstract: No abstract text available Text: IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 33 A VCES = 1600 V VCE sat = 6.2 V typ. tfi = 40 ns N-Channel, Enhancement Mode C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	PDF	40N160 O-247 IXBH40
Untitled Abstract: No abstract text available Text: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	PDF	40N160 IXBF40
IXAN0013 Abstract: 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged	Original	PDF	IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; IXAN0013 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

st 247 Abstract: No abstract text available Text: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings	OCR Scan	PDF	40N140 40N160 O-247 40N160 st 247
Untitled Abstract: No abstract text available Text: High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode VCES ^C25 v¥ CE sat tfi 1400/1600 V 40 A 6V 140 ns Advanced data Symbol Test Conditions V CES V CGR Td = 25°C to 150°C 1400 1600 V ^ 1400 1600	OCR Scan	PDF	40N140 40N160 40N160 O-247
diode 1.5 ke 36 ca Abstract: 40N160 Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Max mum Ratings 40N140 40N160 V CES	OCR Scan	PDF	40N140 40N160 O-247 40N160 D-68623 diode 1.5 ke 36 ca
Untitled Abstract: No abstract text available Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode Test Conditions V CES Tj = 25°C to 150°C 1400 1600 V V CGR ^ 1400 1600 V = 25°C to 150°C; RGE = 1 M£i Continuous ±20 V V GEM Transient	OCR Scan	PDF	40N140 40N160 O-247 D-68623
40N160 Abstract: 6c-5 40N140 BiMOSFET Text: □ IX Y S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES = 1400/1600 V N-Channel, Enhancement Mode S ym bol T e s t C o n d itio n s M axim u m R a tin g s 40N 140 40N 160 V CES T j = 25°C to 150°C 1400 1600 V V CGR	OCR Scan	PDF	40N140 40N160 40N140 40N160 6c-5 BiMOSFET
diode DSDI 9 Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B	OCR Scan	PDF	O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
85C0 Abstract: IXSN35N100U1 SO 042 Text: Insulated Gate Bipolar Transistors IGBT "S" series with improved SCSOA capability Type V v CE(aat} c te8 max. typ- typ- ^auc max. PF Outlines on page 33 C = Collector, E Emitter, G = Gate, KE = Kelvin Emitter US K/W W 10 0.83 0.62 0.42 155 45 50 90 US 0.4	OCR Scan	PDF	20N60® 30N60 40N60 25N100 45N100 N100U1 OT-227B 85C0 IXSN35N100U1 SO 042
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	PDF	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

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40N14 Search Results

40N14 Price and Stock

Infineon Technologies AG IHW40N140R5LXKSA1

Infineon Technologies AG T640N14TOFXPSA1

JRH Electronics 380FS040N14

Infineon Technologies AG T940N14TOFXPSA1

PEPPERL+FUCHS GmbH TVI40N-14TK2T6TN-00500

40N14 Datasheets Context Search

Untitled

40N160

BiMOSFET

IXBH 40N160

40N140

40N160

40N14

40N140

IXBH 40N160

RAS 0510 SUN HOLD

Untitled

Untitled

IXAN0013

7n60b

st 247

Untitled

diode 1.5 ke 36 ca

Untitled

40N160

diode DSDI 9

12N60c equivalent

40n80

85C0

IXBH 40N160