Untitled
Abstract: No abstract text available
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol
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30N120
30N120
247TM
E153432
IXDR30N120
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30N120
Abstract: 30n120d
Text: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l
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OCR Scan
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30N120
30N120
IXDT30N120
O-247
D-68623
30n120d
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package = 1200 V = 60 A = 2.4 V VCE sat typ (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM
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30N120
30N120
247TM
E153432
D-68623
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IXDR30N120
Abstract: 30N120 5027A R30N120 30n120d1 MJ10
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol
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30N120
30N120
247TM
E153432
IXDR30N120
IXDR30N120
5027A
R30N120
30n120d1
MJ10
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PDF
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type unshielded GND electrode
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30N1200
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30N120A
Abstract: No abstract text available
Text: Advanced Data High Voltage IGBT with Diode IXDH 30N120AU1 VCES IC25 VCE sat typ SCSOA Capability Symbol Test Conditions V CES Tj =25°C to 150°C Vco„ T, = Maximum Ratings 25°C to 150°C; RGE= 1 M fi 1200 V 1200 V V GES Continuous ±20 V V QE„ T ransient
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30N120AU1
O-247
30N120A
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30n120
Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1
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30N120
30N120
O-247
O--268
30N120D1
TRANSISTOR D1879
IXDH30N120
IXDH30N120D1
6T600
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable
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30N1200
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable
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30N1200
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode
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30N1200
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Untitled
Abstract: No abstract text available
Text: Capacitive Sensors CFAK 30N1200 Capacitive Sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm
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30N1200
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 25 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift
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30N1200
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IXDH30N120AU1
Abstract: 30N120A
Text: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 V CES 1200 V 50 A 2.5 V ^C25 V CE sat typ S hort C ircuit SOA Capability Prelim inary Data Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES
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OCR Scan
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30N120AU1
O-268
IXDH30N120AU1
30N120A
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PDF
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode
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30N1200
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30N120D1
Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1
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30N120
30N120
IXDH30N120
D-68623
30N120D1
30n120d
T30N120
ixdh 30n120d1
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30n12
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift
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30N1200
30n12
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IXDH30N120
Abstract: 30N120 IXDH30N120D1 30N120D1 30n12
Text: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous
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30N120
30N120
IXDH30N120
IXDH30N120
IXDH30N120D1
30N120D1
30n12
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Untitled
Abstract: No abstract text available
Text: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V IC25 = 60 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C
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30N120
30N120
IXDH30N120
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diode 439
Abstract: 30N120 IXDR30N120 R30N120
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol
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30N120
30N120
247TM
E153432
IXDR30N120
diode 439
IXDR30N120
R30N120
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30N120AU1
Abstract: robot control TO-268 IXDH30N120AU1
Text: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.5 V Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N120AU1
O-268
30N120AU1
robot control
TO-268
IXDH30N120AU1
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Untitled
Abstract: No abstract text available
Text: 30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB30N120IHRWG
NGTB30N120IHR/D
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Untitled
Abstract: No abstract text available
Text: 30N120CN / 30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The 30N120CN and 30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
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HGTG30N120CN
HGTG5A30N120CN
HGT5A30N120CN
TA49281.
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Untitled
Abstract: No abstract text available
Text: Capacitive proximity sensors CFAK 30 Sn = 30 mm Capacitive proximity sensors sample drawing 72 58 M30 x 1,5 SW 36 LED Pot sample picture general data special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable
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30N1200
30N3200
30P1200
30P3200
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Untitled
Abstract: No abstract text available
Text: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and
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CH-8501
0x/12
11xxxxxx
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