Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    32KX9 Search Results

    32KX9 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB IDT72201 n25l
    Text: fax id: 5412 - CY7C4261 V CYPRESS CY7C4= 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pin CY7C4261 CY7C4271 CY7C4271-15LMB IDT72201 n25l PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords


    OCR Scan     		CY7C460 CY7C462 CY7C464 32Kx9FIFO CY7C460, CY7C462, PDF

    H.294

    Abstract: aa2c
    Text: INTEGRATED DEVICE 14E D • 4055771 G0Q3472 7 HIGH-SPEED STATIC RAM ORGANIZED AS 32Kx9 ADVANCE INFORMATION IDT 71509 -rwé -73- IH FEATURES: DESCRIPTIO N: • 32K x 9 Parity checking Static RAM The IDT71509 is a 294,912-bit high-speed static RAM organized


    OCR Scan     		G0Q3472 32Kx9 IDT71509 912-bit 450mW H.294 aa2c PDF

    ken2

    Abstract: No abstract text available
    Text: fax id: 5421 •■■■■■■'■jH/m'r. a S S K , : CY7C4261V CY7C4271V 'S^i,„*$ & :*■ _ . " T jjjl? 16K/32Kx9 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems


    OCR Scan     		CY7C4261V CY7C4271V 16K/32Kx9 CY7C4261V) CY7C4271V) 67-MHz ken2 PDF

    a32 smd

    Abstract: No abstract text available
    Text: fax id: 5412 '•'■'■'■'■'■'■‘JJSt>iW.-. a S S K , : CY7C4261 CY7C4271 'S^ì,„*$ & :*■ _ jg ? . "T 16K/32Kx9 Deep Sync FIFOs Features Functional Description High-speed, low-power, first-in first-out FIFO memories 16K x 9 (CY7C4261)


    OCR Scan     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz a32 smd PDF

    32Kx9SRAM

    Abstract: bit-slice
    Text: QS83290 High Speed CMOS 32Kx9 SRAM with Common I/O Q QS83290 ADVAN CE INFORMATION FE A TU R E S /B E N E FIT S • • • • 15/20/25/30ns Commercial 20/25/30ns Military TTL compatible I/O Available in 32-pin 300/600-mil DIP, SOJ Equal access and cycle times


    OCR Scan     		QS83290 32Kx9 QS83290 15/20/25/30ns 20/25/30ns 32-pin 300/600-mil MIL-STD-883 32Kx9SRAM bit-slice PDF

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB
    Text: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pwhere CY7C4261 CY7C4271 CY7C4271-15LMB PDF

    transistor military

    Abstract: n1520
    Text: Q S83290 High Speed CMOS 32Kx9 SRAM with Common I/O Q oseaaso advance in fo r m a tio n FEATURES/BENEFITS • • • • 15/20/25/30ns Commercial 20/25/30ns Military TTL compatible I/O Available in 32-pin 300/600-mil DIP, SOJ • • • • Equal access and cycle times


    OCR Scan     		S83290 32Kx9 15/20/25/30ns 20/25/30ns 32-pin 300/600-mil MIL-STD-883 QS83290 transistor military n1520 PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5421 CYPRESS PRELIMINARY CY7C4261V CY7C4271V 16K/32Kx9 Low Voltage Deep Sync FIFOs Functional Description Features • 3.3V operation or low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out (FIFO


    OCR Scan     		CY7C4261V CY7C4271V 16K/32Kx9 CY7C4261V/71V CY7C42X1V 32-Lead PDF

    28 pin ceramic dip

    Abstract: d07.3 as32
    Text: ^EDI EDI8932C 45/55 Monolithic The fu tu r e . . . today, i 32Kx9 SRAM CMOS, High Speed Monolithic Features The EDI8932C Is a high performance, low power, high speed CMOS Static RAM organized as 32,768 words by 9 bits each. Inputs and three-state outputs are TTL compatible and allow for direct interfacing


    OCR Scan     		EDI8932C 32Kx9 EDI8932C MIL-STD-883C, 768x9 A0-A14 D04DOSOQ6 28 pin ceramic dip d07.3 as32 PDF

    SRM2A256SLC

    Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
    Text: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0


    OCR Scan     		SRM2264LC SRM2264LCT SRM2464MT* SRM2564C SRM2A256SLC SRM2A256LLMX SRM2A256LLCT SRM2B256SLMX 32KX8 SRM2B256SLMT SRM2A256SLC SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2564C SRM20100LMT tl512 SRM20116 PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5412 " ^ r C Y 7 C 4 2 6 1 y CYPRESS Features 16K/32Kx9 Deep Sync FIFOs Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-M Hz operation (10 ns read/write cycle


    OCR Scan     		16K/32Kx9 CY7C4261) CY7C4271) 100-M CY7C42^ PDF

    Untitled

    Abstract: No abstract text available
    Text: BurstRAMs Processor Specific MCM62486B MCM62940B MCM63P532 MCM67B518 MCM67C518 MCM67H518 MCM67J518 MCM67M518 MCM67B618 MCM67B618A 32Kx9 .5-3 32Kx9 . 5-12 32Kx32 .5-20 32Kx18 .5-31


    OCR Scan     		MCM62486B MCM62940B MCM63P532 MCM67B518 MCM67C518 MCM67H518 MCM67J518 MCM67M518 MCM67B618 MCM67B618A PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5412 CYPRESS CY7C4261 CY7C4271 PRELIMINARY 16K/32Kx9 Deep Sync FIFOs Functional Description Features High-speed, low-power, first-in first-out FIFO memories 16K x 9 (CY7C4261) 32K x 9 (CY7C4271) 0.5 micron CMOS for optimum speed/power High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz 32-pin PDF

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB
    Text: fax id: 5412 CY7C4261 CY7C4271 Back 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4261 CY7C4271 CY7C4271-15LMB PDF

    CY7C4261V

    Abstract: CY7C4271V CY7C42X1V
    Text: fax id: 5421 CY7C4261V CY7C4271V PRELIMINARY 16K/32Kx9 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO


    Original     		CY7C4261V CY7C4271V 16K/32Kx9 CY7C4261V) CY7C4271V) 67-MHz CY7C4261V/71V CY7C42X1V CY7C4261V CY7C4271V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C4261 CY7C4271 •ÄÄÄK 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		CY7C4261 CY7C4271 16K/32 CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5412 CY7C4261 CY7C4271 /C Y P R E SS Features 16K/32Kx9 Deep Sync FIFOs Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K X 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pin 32-pln PDF

    ci 3860, 8 pin

    Abstract: 22Z3
    Text: High Performance 32Kx9 CMOS SRAM 11 W ESW . AS7C259 AS7C259L 32K x 9 C M O S S R A M C o m m o n I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e


    OCR Scan     		AS7C259 32Kx9 AS7C259L 605mW 55mWTTLI/0 125mW 10MHz 32-pin ci 3860, 8 pin 22Z3 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx9 CMOS SRAM 11 AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e


    OCR Scan     		32Kx9 AS7C259 AS7C259L 32Kx9 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32 Kx 9 C M O S S R A M C o m m o n I/O {F E A TU R E S • Organization: 32,768 words x 9 bits • 2.0V data retention (L version) • High Speed - Industry's fastest OE Access Time 12/15/20/25/35 ns Address access time


    OCR Scan     		32Kx9 AS7C259 AS7C259L 605mW 125mW 10MHz PDF

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB 42616
    Text: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-ponductor CY7C4261 CY7C4271 CY7C4271-15LMB 42616 PDF

    32Kx16

    Abstract: Intel EEPROM 32kx8
    Text: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4


    OCR Scan     		32Kx8 64KX8 32KX16 128KX8 64KX16 32KX32 64KX32 512KX8 256KX16 Intel EEPROM 32kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32Kx9 Fast SRAM AS7C259 Features Logic Block Diagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: t0 E=3-8 ns Vcc GND ♦ Low power - 633 mW @ 100 MHz - 11 mW @ 10 MHz standby AO A1 - 2.75 mW @ 10 MHz standby: L version A2 A3 ♦ Automatic CE1/CE2 power down


    OCR Scan     		32Kx9 AS7C259 AS7C259 th9-15 7C259-20 7C259-25 7C259-35 7C259-12 PDF