30-06 A7T Search Results

A7t diode

Abstract: diode a7t 30-06 A7T L 3006 MWI 30-06 A7T 30-06A7T th 3006
Contextual Info: MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack IC25 = 45 A VCES = 600 V VCE sat typ. = 1.9 V Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4

Contextual Info: MWI 30-06 A7 MWI 30-06 A7T IC25 = 45 A VCES = 600 V VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 1 2 5 6 9 10 T NTC 16 15 14 3 4 11 12 7 8 E72873

30-06 A7T

Abstract: E72873 NTC 100 - 11
Contextual Info: MWI 30-06 A7 MWI 30-06 A7T IC25 = 45 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T 1 2 5 6 9 10 T NTC 16 15 14 without NTC with NTC 3 4 7 8 11 12 E72873

3006A7

Abstract: MWI 30-06 A7T
Contextual Info: Advanced Technical Information MWI 30-06 A7 IC25 = 45 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Type NTC - Option MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7

Contextual Info: TT WS256K8-XCX M/HITE /M ICRO ELECTRO N ICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 25 to 45n S PIN CONFIGURATION TOP VIEW NCC A16C A14C A I2 C A7T A6C A5L A4 C A3C A2¿ A1C AO □ i/oor 1/01 c 1/0 2 C Vss Q 1 2 3 4 5 6 7 8 9 10 11 12 13

ltdf

Abstract: 28C64A 28C64A-20 28C64A-25
Contextual Info: í « GENERAL INSTRUM ENT 28C64A PREURflDMARY ÖMFORRjflÄTOONI 64K 8K X8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Top View w RDY/BUSY C •1 tNCk a 12 rL. 2 A7t= AeC AsC A4 c A3 C 3 4 5 6 7 A2 C 8 Al C 9 A(j C 10 OUTPUT ENABLE !-=—-

Contextual Info: HN27C101AP/AFP/ATT Series HN27C301AP/AFP Series 131072-word x 8-bit CMOS One Time Electrically Programmable ROM HITACHI Description The HN27C101AP/AFP/ATT series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C101 AP/AFP/ATT, HN27C301AP /AFP series are in the "1" state output high .

9P4M

Abstract: 10P4M 12P4M 12p8 PLE5P8 PLE8P8 8p4c t461 PLE5P8A
Contextual Info: MONOLITHIC MEMORIES INC tfl » e J b3D3mO □ OOS'tkS 3 f D r-'W ’ Programmable Logic Element PLE Circuit Fam ily Ordering Information Features/Benefits PLE5P8 A C N STD • Programmable replacement for conventional TTL logic TZPR O C ESSIN G T • Reduces 1C inventories and simplities their control

VUO 121-16 NO1

Abstract: D-68623 MKI 75-06 A7 IXYS VUO 30
Contextual Info: Product Change Notice PCN No.: 04/06 Customer: All IXYS product type: Package: E2 (see pictures on page 2) Products: See page 2 Description of change: New molding tool for E2 housing Reason for change: Releasing second source supplier to ensure delivery performance

AT49F1025-70VC

Abstract: AT49F1025
Contextual Info: Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Word By Word Programming -1 0 ^s/Word Typical Hardware Data Protection

Contextual Info: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Triac t460

Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Contextual Info: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Contextual Info: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL

EZ722

Abstract: A7t smd EZ524 smd code A7t smd A6t zd 409 5962-88525 07 xa Select 642 UX A14C AT28C256
Contextual Info: Features • Fast Read Access Time -150 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes - Internal Control Timer • Fast Write Cycle Times - Page Write Cycle Time: 3 ms or 10 ms Maximum - 1 to 64-Byte Page Write Operation

Contextual Info: TOSHIBA LOGIC/MEMORY 4ÖE D DD523Ô0 32,768 W O R D x 9 BIT BiCM O S STATIC R A M 1 PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS

MHS 65756

Abstract: HM1-65756
Contextual Info: 41E MATRA SñbñMSfc. D 00G5171 5ñS • M N H S M H S January 1991 HM 65756 HI-REL DATA SHEET 32 k X 8 HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE

smd A7t

Abstract: smd code A7t
Contextual Info: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2

Contextual Info: M 2 ic r o c h ip 8 C 1 6 A 16K 2K x 8 CMOS EEPROM BLOCK DIAGRAM FEATURES I/O O • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

Contextual Info: G 2 WMF128K8-XXX5 M/HITE /MICROELECTRONICS 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • A c c e s s T i m e s o f 60, 7 0, 90, 120, 1 5 0 n s ■ O rg a n iz e d as 1 2 8 K x 8 ■ P a c k a g in g ■ C o m m e r c i a l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a ng e s

Contextual Info: • HYUNDAI HY2316050 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316050 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE