28C16AF Search Results

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19

Contextual Info: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte

F91300 MASSY

Contextual Info: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation

Contextual Info: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100nA Standby • Fast Byte Write Time— 200|is or 1ms • Data Retention >10 years

PIC16 example code spi slave

Abstract: PIC16 example c code i2c master PIC16FR57 18-SO 25c010 pcd8572 ic 24C16B pic16c154 pcd8582 ds00148b2
Contextual Info: MI CR OC ON TR OL LE RS PRODUCT LINE CARD MEMORY PRODUCTS AP S PL TA I N CA D TI AR O D N PR SP O EC D IF U IC C TS SECOND QUARTER 1997 The Embedded Control Solutions Company PIC16/17 8-BIT MICROCONTROLLER FAMILY Program Memory OTP Product Bytes Words Data

DV164001

Abstract: pic16f84a 512X12 24c02c program for pic16c54c digital clock application note PIC12C508 PIC12C671 DVA17XP400 AC175005 PIC16F628 i2c slave
Contextual Info: MI CR OC ON TR OL LE RS PRODUCT LINE CARD AP MEMORY AND SPECIALTY PRODUCTS S PL TA I N CA D TI AR O D N PR SP O EC D IF U IC C TS SECOND QUARTER 1999 The Embedded Control Solutions Company FUTURE PRODUCTS Product FUTURE PRODUCTS PLANNED ADDITIONS TO MICROCHIP’S PRODUCT LINES

PIC16F867

Abstract: PIC16F866 PIC16F825 PIC16F787 93C76 wp FUZZY pic MICROCONTROLLER pwm PIC16F877 and pwm generator pic16c17 PIC16C177 PIC16C555
Contextual Info: MI CR OC ON TR OL LE RS PRODUCT LINE CARD AP MEMORY PRODUCTS S PL TA I N CA D TI AR O D N PR SP O EC D IF U IC C TS SECOND QUARTER 1998 The Embedded Control Solutions Company PICmicro 8-BIT MICROCONTROLLER FAMILY Product Program Memory OTP E2PROM Data

tce 1994

Abstract: L0523 28C16A
Contextual Info: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years • High Endurance-Minimum 104 Erase/Write Cycles

tce 1994

Abstract: 28C16A MC520
Contextual Info: M 28C 16A ic r o c h ip 16K 2K x 8 CMOS EEPROM BLO CK DIAGRAM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 jis or 1 ms • Data Retention >10 years

28C16A

Abstract: DA10 14 PIN HL-07
Contextual Info: & 28C 16A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device will go to a busy state and automatically clear and write

16F866

Abstract: 12f675 16F867 ST T8 3560 12C519 12F676 12C518 16F865 16F83A ic 12f675
Contextual Info: 1998 プロダクトセレクションガイド 改訂版 http://www.microchip.com マイクロチップテクノロジー社の概要（1） 売上高・販売シェア・ランキング 米国アリゾナ州 チャンドラ： アリゾナ州フェニックス近郊の本社、研

CAT28C16A

Contextual Info: IIIIICRTRLY5T • ■ fff I S E M I C O N D U C T O R C A T 2 8 C 1 6 A 16K-Bit CMOS E’PROM FEATURES ■ Fast Read Access Times: 200 ns End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: -Active: 25 mA Max. -Standby: 100 |iA Max. Hardware Write Protection

Contextual Info: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 ]xs or 1 ms • Data Retention >200 years

Contextual Info: 28C16A & M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100nA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES PACKAGETYPES h. o o => 8 |!±j o • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years

200B

Abstract: 28C16A DK-2750 RG41
Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC

PIC16F718

Abstract: "ENCODER SENSOR" 24c00 interface with PIC by c program DVA17XP400 PIC16F84A 16 pin ic PIC12F676 PIC12F675 DEVELOPMENT BOARD KIT 24LC21 PIC16F628 i2c slave Transponder 12mm
Contextual Info: RS LE OL TR ON OC CR MI S MEMORY AND SPECIALTY PRODUCTS AP P TA LI N CA D TI AR O D N PR SP O EC D IF U IC C TS The Embedded Control Solutions Company PICmicro 8-BIT MICROCONTROLLER FAMILY Product Program Memory OTP E2PROM Data Max. Data RAM Speed I/O

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

Contextual Info: $ M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES 24 D V ce A5C 3 M C 4 22 H A 9 A3C S 20 23 D A B 21 D W E A2C 6 o 18 3 A 1 0 A1C 7 AO C 8 5 16 : c e 17 D l/0 7 vooC 9 v o i z 10 16 3 1 /0 6 15 D i/ o s I/0 2 C 11 14 H U 0 4 VssC 12 13 ] 1/03 A6

Contextual Info: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 1OOjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: blD32Gl DGD7S2b DQñ « M C H R ti3 E D MICROCHIP TECHNOLOGY INC 28C16A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • C M OS Technology for Low Power Dissipation - 30 m A Active - 100 |iA Standby • Fast Byte W rite Time— 200 [is or 1 ms • D ata R etention >200 years • High E ndurance-M inim um 104 Erase/Write Cycles

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC

Contextual Info: M 2 ic r o c h ip 8 C 1 6 A 16K 2K x 8 CMOS EEPROM BLOCK DIAGRAM FEATURES I/O O • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years