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    Fujidenki 2SK2808-01MR

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    2SK2808 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2808 Fuji Electric N-channel MOS-FET Original PDF
    2SK2808-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2808-01MR Fuji Electric Power MOSFET Scan PDF

    2SK2808 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		2SK2808-01MR PDF

    mosfet power amplifier

    Abstract: 2SK2808-01MR mosfet low vgs mosfet 830
    Text: 2SK2808-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-220F Applications Switching regulators


    Original     		2SK2808-01MR O-220F mosfet power amplifier 2SK2808-01MR mosfet low vgs mosfet 830 PDF

    2SK2808-01MR

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2808-01 MR - SPÊC.NO. Fuji Electric CoMLtd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I ' ' I DWG. NO. D RA W N / 1/0 Y 0257 -R -00 4a


    OCR Scan     		2SK2808-01MR 0257-R-004a To-220F 0257-R-003a 0257-R-003a 2SK2808-01MR PDF

    220TQ

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s ON , High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R


    OCR Scan     		2SK2806-01 2SK2807-01L 2SK2808-01 2SK2890-01 2SK2687-01 2SK2688-01L 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 220TQ PDF

    2SK2687-01

    Abstract: 2SK2688-01L 2SK2689-01MR 2SK2806-01 2SK2807-01L 2SK2808-01MR 2SK2890-01MR 2SK2892-01R 2SK3363-01 F7007N
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01


    Original     		F8006N F7007N 2SK2806-01 2SK2807-01L, 2SK2808-01MR 2SK2687-01 2SK2688-01L, 2SK2689-01MR 2SK3363-01 2SK2890-01MR 2SK2687-01 2SK2688-01L 2SK2689-01MR 2SK2806-01 2SK2807-01L 2SK2808-01MR 2SK2890-01MR 2SK2892-01R 2SK3363-01 F7007N PDF

    2SK2808-01MR

    Abstract: No abstract text available
    Text: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		2SK2808-01MR 2SK2808-01MR PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power MOSFET . » TYPE NAME : 2SK2808-01 MR SPËC. NO, Fuji Electric Co.,Ltd. T his Specification is subject to c h a n g e w ithout notice. DATE ' NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED - 1 DWG. NO. DRAW N /


    OCR Scan     		2SK2808-01 0257-R-003a PDF

    003A

    Abstract: 2SK2808-01MR 2SK2808
    Text: SPECIFICATION DEVICE NAME : Power MOSFET , » TYPE NAME 2SK2808-01 MR SPÊC.NO . Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED - L . . . V . • I DWG. NO.


    OCR Scan     		2SK2808-01MR 0257-R-004a To-220F 0257-R-003a 0257-R-003a 003A 2SK2808-01MR 2SK2808 PDF

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182 PDF

    Untitled

    Abstract: No abstract text available
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type Volts Amps. 5x2 Amps. RDS on Max. ＊1 Ohms (Ω) 7 60


    Original     		F8006N F7007N 2SK2806-01 2SK2807-01L, 2SK2808-01MR 2SK2687-01 2SK2688-01L, 2SK2689-01MR 2SK3363-01 2SK2890-01MR PDF

    Untitled

    Abstract: No abstract text available
    Text: a /\°7 -MOSFET / Power MOSFETs FAP-IIIA '> 'J ~ X FAP-IIIA series iS iS Ä rH m • 1&J- m j Device type High surge ruggedness Voss to pulse * ’ Rds Amps. Volts ms 20 80 0.07 35 ±20 1.5 TO-220F15 60 40 160 0.03 40 ±20 1.5 TO-220F15 2.3 60 40 160 0.03


    OCR Scan     		O-220F15 2SK1822-01 2SK2259-01MR 2SK2165-01 2SK2166-01R 2SK1969-01 2SK1823-01R F8006N F7007N PDF

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 PDF

    2SK1969

    Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
    Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series


    Original     		Feb-00 2SK2248 2SK2249 2SK2048 O-220F15 2SK2808 2SK2890 2SK2689 2SK2891 2SK2893 2SK1969 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881 PDF

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R PDF

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original     		2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018 PDF

    ci 740

    Abstract: K1279 TO-220F15 K1969 2SK1822-01MR 2SK1823-01R 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK2687-01
    Text: <s MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R ds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type Maximum Ratinas Pd (W) V dss (V) Id (A) 2SK1822-01MR 2SK2165-01 2SK2166-01R 2SK2259-01MR 2ÖK1823-01R


    OCR Scan     		2SK1822-01MR O-220F15 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK1823-01R K1969-01 2SK1818MR ci 740 K1279 TO-220F15 K1969 2SK2687-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R d s ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Maximum Ratinas I d (A ) Pd (W) Device Type Characteristics (Max.1 V dss (V ) 2SK1822-01 MR 2SK2165-01 2SK2166-01R


    OCR Scan     		2SK1822-01 2SK2165-01 2SK2166-01R 2SK225Ã -01MR 2SK1823-01R 2SK1969-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R PDF