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    ABB Low Voltage Products and Systems S802S-K100

    Mcb S800S 2P K 100A |Abb S802S-K100
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    2SK100 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1000 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1000 NEC Small Signal FET(Junction type) AM tuner, HF amplification Original PDF
    2SK1000 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK1000 Unknown FET Data Book Scan PDF
    2SK1000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1001 Unknown FET Data Book Scan PDF
    2SK1001 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1002 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1002 Unknown FET Data Book Scan PDF
    2SK1006 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1006 Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1006 Unknown Scan PDF
    2SK1006 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1006 Unknown FET Data Book Scan PDF
    2SK1006-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1006-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1006M Collmer Semiconductor MOSFET Selection Guide Scan PDF
    2SK1007 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1007 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1007 Unknown FET Data Book Scan PDF

    2SK100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211 PDF

    2SK1006-01M

    Abstract: 2sk mosfet
    Text: 2SK1006-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High voltage


    OCR Scan     		2SK1006-01M SC-67 A2-71 2SK1006-01M 2sk mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1006-01 MR FUJI POWER MOS-FET n - : h a n n e l s ilic o n p o w e r m o s -fe t • Outline Drawings ■ Features • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • \ 0SE = ± 3 0 V Guarantee


    OCR Scan     		2SK1006-01 PDF

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01 PDF

    2SK1009-01

    Abstract: A280
    Text: 2SK1009-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES lOutline Drawings ¡Features •High speed switching •Low on-resistance 4.5*^ 'N o secondary breakdown •Low driving power J 1High voltage >Vgss = ± 30 V Guarantee -— »Avalanche-proof


    OCR Scan     		2SK1009-01 O-22QAB SC-46 2SK1009-01 A280 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01


    OCR Scan     		2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 2SK1007-01 PDF

    2SK1004

    Abstract: No abstract text available
    Text: 2SK1004 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		2SK1004 PDF

    2SK1006-01MR

    Abstract: No abstract text available
    Text: 2SK1006-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54


    Original     		2SK1006-01MR O-220F15 SC-67 2SK1006-01MR PDF

    100A Mosfet

    Abstract: 300V regulator Fuji Electric MOSFET 300V mosfet power amplifier TO-220F15 125 diode forward converter Zero-Gate Voltage Drain Current 2SK1006-01MR
    Text: 2SK1006-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54


    Original     		2SK1006-01MR O-220F15 SC-67 100A Mosfet 300V regulator Fuji Electric MOSFET 300V mosfet power amplifier TO-220F15 125 diode forward converter Zero-Gate Voltage Drain Current 2SK1006-01MR PDF

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 PDF

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan     		2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082 PDF

    2SK1007-01

    Abstract: T151
    Text: 2SK1007-01 FUJI POWER M O S-FET F-II SERIES N-CHANNEL SILICON POWER MOS-FET • Features lOutline Drawings • Hicih speed sw itching • Low on-resistance • No secondary breakdown 4.5* 03.6T • Low driving power • Hiejh voltage • Vc ls - ± 3 0 V Guarantee


    OCR Scan     		2SK1007-01 SC-46 55Pit 2SK1007-01 T151 PDF

    2SK1007-01

    Abstract: No abstract text available
    Text: 2SK1007-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220AB Applications Switching regulators UPS DC-DC converters


    Original     		2SK1007-01 O-220AB SC-46 2SK1007-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1007-01 FUJI POWER MOS-FET IM-CHAN NEL SILICON POWER MOS-FET F - II S E R I E S • Features lOutline Drawings • Hicih speed switching • Low on-resistance H ?“ • No secondary breakdown 10T • Low driving power 1- • Hicjh voltage J • V CIS = ± 3 0 V Guarantee


    OCR Scan     		2SK1007-01 O-220AB SC-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1007-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220AB Applications Switching regulators UPS DC-DC converters


    Original     		2SK1007-01 O-220AB SC-46 PDF

    2SK1101-01M

    Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 PDF

    SK1006

    Abstract: HH1T sk1006 circuit stu mosfet
    Text: 2SK1006-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES Outline Drawings • Features • High speed switching • Low on-resistance • Mo secondary breakdown • L d w d r iv in g power • High voltage • \ gss = ±30V Guarantee • Avalanche-proof


    OCR Scan     		2SK1006-01 SC-67 SK1006 HH1T sk1006 circuit stu mosfet PDF

    2SK1014-01

    Abstract: 2SK151
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1014-01 2SK151 PDF

    2SK1221-01

    Abstract: No abstract text available
    Text: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01


    OCR Scan     		2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1222-01 2SK1015-01 2SK1916-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1008-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • 7g s e = ± 3 0 V Guarantee • Avalanche-proof


    OCR Scan     		2SK1008-01 PDF

    G25N

    Abstract: No abstract text available
    Text: 2SK1009-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed sw itching • Low o rw e s is ta n c e 4.5*“ 0Ì.6T • No second ary breakdow n • Low driving p o w er • High voltage


    OCR Scan     		2SK1009-01 O-220AB G25N PDF

    2sk1507

    Abstract: TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK2469-01MR
    Text: <§ MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		2SK2519-01 O-220 2SK2520-01 O-220F15 2SK2521-01 2SK2522-01MR O-220 2SK2469-01MR 2sk1507 TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 PDF

    2SK1007-01

    Abstract: T151
    Text: 2SK1007-01 FUJI PO W ER M O S -FE T N-CHANNEL SILICON POWER MOS-FET F -II SER IES • F eatu res lO utline D ra w in g s • Hicih speed sw itching • Low on-resistance • No secondary breakdown • Lo'v driving power • Hicjh voltage • V c! s- ± 3 0 V Guarantee


    OCR Scan     		2SK1007-01 O-22QAB SC-46 Tc-25Â T151 PDF