Untitled
Abstract: No abstract text available
Text: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control
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OCR Scan
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2SK2691-01R
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PDF
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cc fuji
Abstract: 2SK2691-01R
Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2691-01R SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME DRAWNl CHECKED, I - APPROVED Fuji Electric Co.,Ltd. 1/0 Y 0?57-R-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2691-01R
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OCR Scan
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2SK2691-01R
57-R-004a
n957-R-0n3a
cc fuji
2SK2691-01R
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PDF
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100TB
Abstract: 2SK2691-01R DIODE SJ 98
Text: FU JI 2SK2691-01R N-channel MOS-FET FAP-IIIB Series 60V > Features - 0 ,0 1 Q 70 A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T O -3P F > Applications - Motor Control General Purpose Power Amplifier
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OCR Scan
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2SK2691-01R
186mH
100TB
DIODE SJ 98
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PDF
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2SK2691-01R
Abstract: mosfet 100w amplifier
Text: 2SK2691-01R N-channel MOS-FET FAP-IIS Series 60V > Features - 10mΩ ±70A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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Original
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2SK2691-01R
60VDS)
2SK2691-01R
mosfet 100w amplifier
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PDF
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2SK2691-01R
Abstract: N57R TI SVG
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME : 2SK2691-01R SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN • CHECKED, - ' - ^ I 1/fe = : 1 1.Scope
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OCR Scan
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2SK2691-01R
57-R-004a
57-R-003a
2SK2691-01R
N57R
TI SVG
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PDF
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Schematics 5250
Abstract: "Power MOSFET" schematic 5250 2SK2691-01R mosfet low vgs 685 mosfet
Text: 2SK2691-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-3PF Applications Switching regulators DC-DC converters
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Original
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2SK2691-01R
Schematics 5250
"Power MOSFET"
schematic 5250
2SK2691-01R
mosfet low vgs
685 mosfet
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PDF
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2SK2691-01R
Abstract: mosfet 100w amplifier
Text: 2SK2691-01R N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,01Ω 70A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters
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Original
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2SK2691-01R
2SK2691-01R
mosfet 100w amplifier
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PDF
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80YSP
Abstract: No abstract text available
Text: _ I_ ;_ SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2691-01R SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. | DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN • CHECKED, 1 -
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OCR Scan
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2SK2691-01R
2SK2691-01R
57-R-no3a
80YSP
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PDF
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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PDF
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Untitled
Abstract: No abstract text available
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type Volts Amps. 5x2 Amps. RDS on Max. ＊1 Ohms (Ω) 7 60
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Original
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
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PDF
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Untitled
Abstract: No abstract text available
Text: a /\°7 -MOSFET / Power MOSFETs FAP-IIIA '> 'J ~ X FAP-IIIA series iS iS Ä rH m • 1&J- m j Device type High surge ruggedness Voss to pulse * ’ Rds Amps. Volts ms 20 80 0.07 35 ±20 1.5 TO-220F15 60 40 160 0.03 40 ±20 1.5 TO-220F15 2.3 60 40 160 0.03
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OCR Scan
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O-220F15
2SK1822-01
2SK2259-01MR
2SK2165-01
2SK2166-01R
2SK1969-01
2SK1823-01R
F8006N
F7007N
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PDF
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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OCR Scan
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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PDF
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2SK1969
Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series
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Original
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Feb-00
2SK2248
2SK2249
2SK2048
O-220F15
2SK2808
2SK2890
2SK2689
2SK2891
2SK2893
2SK1969
2SK1508
2SK2691
2SK2690
2SJ477
2SK2906
TO-220F15
2SK1390
2SK1083
2SK1881
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PDF
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220TQ
Abstract: No abstract text available
Text: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s ON , High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R
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OCR Scan
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2SK2806-01
2SK2807-01L
2SK2808-01
2SK2890-01
2SK2687-01
2SK2688-01L
2SK2689-01MR
2SK2892-01R
2SK2891-01
2SK2893-01
220TQ
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PDF
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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Original
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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PDF
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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Original
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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PDF
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2SK2687-01
Abstract: 2SK2688-01L 2SK2689-01MR 2SK2806-01 2SK2807-01L 2SK2808-01MR 2SK2890-01MR 2SK2892-01R 2SK3363-01 F7007N
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01
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Original
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
2SK2687-01
2SK2688-01L
2SK2689-01MR
2SK2806-01
2SK2807-01L
2SK2808-01MR
2SK2890-01MR
2SK2892-01R
2SK3363-01
F7007N
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R d s ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Maximum Ratinas I d (A ) Pd (W) Device Type Characteristics (Max.1 V dss (V ) 2SK1822-01 MR 2SK2165-01 2SK2166-01R
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OCR Scan
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2SK1822-01
2SK2165-01
2SK2166-01R
2SK225Ã
-01MR
2SK1823-01R
2SK1969-01
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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PDF
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2SK4111
Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:
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Original
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2SK258
O-204AA/TO-3
2SK259
2SK258H
O-218
2SK695
2SK695A
2SK4111
2SK4110
2SK4106
2sk4112
2sk2671
2sk4113
2SK2648
2N5121
2N5160 equivalent
2SK2666
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PDF
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