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    2SK196 Search Results

    2SK196 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1960-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK1968-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3P, /Tube Visit Renesas Electronics Corporation
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    2SK196 Price and Stock

    Rochester Electronics LLC 2SK1968-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1968-E Bulk 21
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    Renesas Electronics Corporation 2SK1968-E

    Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-3P Tube
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    Verical 2SK1968-E 181 22
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    Rochester Electronics 2SK1968-E 181 1
    • 1 $13.99
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    Renesas Electronics Corporation 2SK1960-AZ

    Power Field-Effect Transistor, 3A, 16V, N-Channel MOSFET
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    Rochester Electronics 2SK1960-AZ 25 1
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    Renesas Electronics Corporation 2SK1960

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PSSO-F3;
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    Vyrian 2SK1960 313
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    2SK196 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK196 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK196 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1960 Kexin N-Channel MOSFET Original PDF
    2SK1960 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1960 NEC N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Original PDF
    2SK1960 NEC Semiconductor Selection Guide Original PDF
    2SK1960 TY Semiconductor N-Channel MOSFET - SOT-89 Original PDF
    2SK1960 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1960 Unknown FET Data Book Scan PDF
    2SK1960-T1 NEC N Channel enhancement MOS FET Original PDF
    2SK1960-T2 NEC N Channel enhancement MOS FET Original PDF
    2SK1961 Sanyo Semiconductor N-Channel Junction Silicon FET High-Frequency Low- Original PDF
    2SK1961 Sanyo Semiconductor N-Channel Junction Silicon FET Original PDF
    2SK1961 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1961 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK1961 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK1961 Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF
    2SK1961 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK1961Y3 Sanyo Semiconductor TRANS JFET N-CH 15V 52A 3NP Original PDF
    2SK1961Y4 Sanyo Semiconductor TRANS JFET N-CH 15V 63A 3NP Original PDF

    2SK196 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    Original
    2SK1969-01 PDF

    Hitachi DSA002781

    Abstract: No abstract text available
    Text: 2SK1968 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain


    Original
    2SK1968 D-85622 Hitachi DSA002781 PDF

    2SK1960

    Abstract: C10535E MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1960 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1960 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an


    Original
    2SK1960 2SK1960 C10535E MEI-1202 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1967 Power F-MOS FETs 2SK1967 Silicon N-Channel Power F-MOS Unit : mm • Features ● Low-voltage ● High-speed 3.4±0.3 8.5±0.2 switching : tf =180ns 6.0±0.5 1.0±0.1 ■ Applications ● Motor 1.5max. drive 10.5min. ● Solenoid drive ● Control


    Original
    2SK1967 180ns PDF

    2SK1969

    Abstract: 2SK1969-01 M6020 SC-65 300VDS
    Text: 2SK1969-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications


    Original
    2SK1969-01 SC-65 2SK1969 2SK1969-01 M6020 SC-65 300VDS PDF

    2SK1968

    Abstract: 2SK1968-E PRSS0004ZE-A SC-65
    Text: 2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 Previous: ADE-208-1337 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator


    Original
    2SK1968 REJ03G0989-0200 ADE-208-1337) PRSS0004ZE-A 2SK1968 2SK1968-E PRSS0004ZE-A SC-65 PDF

    2SK1961

    Abstract: No abstract text available
    Text: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.


    Original
    ENN4502 2SK1961 2019B 2SK1961] SC-43 2SK1961 PDF

    2SK1969-01

    Abstract: No abstract text available
    Text: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    Original
    2SK1969-01 2SK1969-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Type SMD Product specification 2SK1960 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 Features +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON resistance +0.1 4.00-0.1 Gate can be driven by 1.5V RDS on =0.8 MAX.@VGS=1.5V,ID=0.1A 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1


    Original
    2SK1960 OT-89 PDF

    2SK1968

    Abstract: DSA003639 of 2sk1968
    Text: 2SK1968 Silicon N-Channel MOS FET ADE-208-1337 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline


    Original
    2SK1968 ADE-208-1337 2SK1968 DSA003639 of 2sk1968 PDF

    1ER0

    Abstract: 2SK1968 Hitachi DSA00397
    Text: 2SK1968 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain


    Original
    2SK1968 1ER0 2SK1968 Hitachi DSA00397 PDF

    a2305

    Abstract: A2307 2sk1969 N CH MOSFET
    Text: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance


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    2SK1969-01 a2305 A2307 2sk1969 N CH MOSFET PDF

    04 NG 537

    Abstract: 2SK1960 transistor w bh 212 7876A
    Text: NEC M O S F ie ld E ffe c t T ra n s is to r 2SK1960 N M O S F ET 2SK19 60 Ü1. 5 V I E B j ^ y w N ^ ^ / W f f é ^ M O S F E T T ' h n , f t i f .- :- .i;< # ;-:•■ è , ^"/ Y ^ t k v -f r « i t lytis <£ £ # H t /ÿ s £ & : mm) 4.5 ± 0.1 £ > !? * *


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    2SK1960 2SK1960Ã Ht111 04 NG 537 2SK1960 transistor w bh 212 7876A PDF

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


    OCR Scan
    2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151 PDF

    2SK196

    Abstract: No abstract text available
    Text: HITAÒHi/-COPTO E L E C T R O N I C S } UUCmtìU r1 2SK1960 SILICON N-CHANNEL M OS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • High Speed Sw itching. • High Cutoff Frequency. • Enhancem ent-M ode. • Suitable for Sw itching Regulator, DC-DC Con­


    OCR Scan
    2SK196 -2SK196Â PDF

    0124

    Abstract: ako 514 400 2SK1961 J100 AO 4502
    Text: O rd e rin g n u m b e r. EN 45 Ó 2 _ 2SK1961 No.4502 N -C hannel Junction Silicon FET H igh-Frequency Low-Noise Amp A pplications A p p lic a tio n s • High-frequency low-noise amp applications. F e a tu re s •Adoption of FBET process • Large I y * I


    OCR Scan
    2SK1961 0124 ako 514 400 J100 AO 4502 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss


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    2SK1961 SC-43 rO-92 3C-43 PDF

    2SK2574

    Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
    Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative


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    2SK1868 -220F 2SK1255 O-220E 2SK2578 2SK2579 2SK1967 2SK2659 2SK1033 2SK2574 2SK2574 2SK1259 2SK2377 2SK2659 PDF

    2SK1815

    Abstract: 2SK1388
    Text: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)


    OCR Scan
    2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 O220F15 0220F T0220F15 T03PF 2SK1815 2SK1388 PDF

    017Q

    Abstract: No abstract text available
    Text: FU JI 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Q 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    OCR Scan
    2SK1969-01 017Q PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1968 Silicon N C h a n n e l M O S F E T Application T O -3 P High speed power switching Features • Low on—resistance • High speed switching • No secondary breakdown • Suitable for Sw itching regulator • Low drive current T ab le 1 1. G ate


    OCR Scan
    2SK1968 PDF

    2SK1506 22

    Abstract: 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M 2SK1822-01M 2SK1823-01
    Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 0001Ô72 Hñfi BICOL <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low R d S ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01


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    2SK1822-01M T0220F15 2SK1823-01 t03pf 2SK1969-01 2SK1818M 2SK1979 2SK1276 2SK1506 22 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M PDF

    A2305

    Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
    Text: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof


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    2SK1969-01 SC-65 20Kil) A2305 A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969 PDF

    2SK1969-01

    Abstract: No abstract text available
    Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 G001Ô72 4êfi « C O L <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low RdS ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01


    OCR Scan
    2SK1822-01M 2SK1823-01 2SK1969-01 T0220F15 T03PF 2SK1505M 2SK2048 2SK1388 2SK1083M 2SK1096M PDF