2SJ532
Abstract: DSA003774
Text: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2
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2SJ532
ADE-208-653B
220CFM
2SJ532
DSA003774
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2SJ532
Abstract: DSA003643
Text: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G
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2SJ532
ADE-208-653B
220CFM
2SJ532
DSA003643
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PDF
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Hitachi DSA002751
Abstract: No abstract text available
Text: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D
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2SJ532
ADE-208-653B
220CFM
D-85622
Hitachi DSA002751
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2SJ532
Abstract: 2SJ532-E PRSS0003AE-A
Text: 2SJ532 Silicon P Channel MOS FET REJ03G0882-0400 Previous: ADE-208-653B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.
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2SJ532
REJ03G0882-0400
ADE-208-653B)
PRSS0003AE-A
O-220C
2SJ532
2SJ532-E
PRSS0003AE-A
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2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
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HAT2038R/HAT2038RJ
ADE-208-666C
HAT2038R
HAT2038RJ
pdf\7420e
HAT1044M
HAT1053M
2SK3235
2SK3379
Hitachi DSA00276
HAT1040T
2SJ517
2SK1835
TO220CFM
2SK3421
HAT1053
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PDF
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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PDF
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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2SJ532
Abstract: 2SJ532-E PRSS0003AE-A *J532
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SJ532
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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TO220CFM
Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D
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HAT1024R
ADE-208-476G
pdf\7420e
HAT1044M
HAT1053M
HAT2053M
HAT2054M
TO220CFM
TO220FM
2sk3148
2SK2978
hat2070
TO-220aB rr
Hitachi DSA00276
2SK2096
HAT1040T
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Yamaha YDA
Abstract: Yamaha YDA*136 FS10 MOSFET Amplifier 60w VVD1 yamaha ic 2SK2933 "cross reference" 2SK2933 YDA136 renesas mpu general catalog
Text: YDA136 D- 60 STEREO 60W-100W DIGITAL AUDIO POWER AMPLIFIER CONTROLLER •Outline YDA136 D-60 is a high efficient and high output digital audio power amplifier controller IC. By combining a general purpose PowerMOSFET (hereafter called PowerMOSFET) which is connected with YDA136
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YDA136
0W-100W
60Wx2ch
100Wx2ch
YDA136
24bit
192kHz
-73dB1dB
Yamaha YDA
Yamaha YDA*136
FS10 MOSFET
Amplifier 60w
VVD1
yamaha ic
2SK2933 "cross reference"
2SK2933
renesas mpu general catalog
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-653B Z 3rd. Edition June 1, 1998 Features • Low on-resistance Rds(oii) = 0.042i2 typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO-220CFM
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OCR Scan
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2SJ532
ADE-208-653B
042i2
O-220CFM
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PDF
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