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    2N603 Price and Stock

    Microchip Technology Inc 2N6030

    POWER BJT
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    STMicroelectronics 2N6036

    TRANS PNP DARL 80V 4A SOT32
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    2N6036 176 7
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    onsemi 2N6036

    TRANS PNP DARL 80V 4A TO126
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    2N6036 60 7
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    onsemi 2N6034

    TRANS PNP DARL 40V 4A TO126
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    Microchip Technology Inc 2N6031

    POWER BJT
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    Newark 2N6031 Bulk 100
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    Microchip Technology Inc 2N6031 1
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    Onlinecomponents.com 2N6031
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    NAC 2N6031 2
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    Master Electronics 2N6031
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    2N603 Datasheets (304)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N603 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N603 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N603 Unknown GE Transistor Specifications Scan PDF
    2N603 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N603 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N603 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N603 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N603 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N603 Unknown Vintage Transistor Datasheets Scan PDF
    2N603 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6030 Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTOR Original PDF
    2N6030 Motorola Collector-emitter/base voltage: 120Vdc 16 Amp high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=16 / Hfe=20-80 / fT(Hz)=- / Pwr(W)=200 Original PDF
    2N6030 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6030 API Electronics Short form transistor data Short Form PDF
    2N6030 Central Semiconductor TRANS GP BJT PNP 120V 16A 2TO-3 Scan PDF
    2N6030 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6030 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6030 Motorola The European Selection Data Book 1976 Scan PDF
    2N6030 Motorola European Master Selection Guide 1986 Scan PDF
    2N6030 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    ...

    2N603 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6030

    Abstract: 2N6029 2N5629 2N5630
    Text: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications


    Original
    PDF 2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630

    2N5629

    Abstract: 2N5630 2N6029 2N6030
    Text: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original
    PDF 2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030

    2N6032

    Abstract: 2N6033 all ic data all ic datasheet
    Text: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current


    Original
    PDF 2N6032 2N6033 MIL-PRF-19500/528 2N6032 2N6033 all ic data all ic datasheet

    2N5631

    Abstract: 2N6031
    Text: Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS


    Original
    PDF 2N5631 2N6031 2N5631 2N6031

    2N6033

    Abstract: No abstract text available
    Text: 2N6033 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6033 O204AA) 31-Jul-02 2N6033

    2N6034G

    Abstract: 2N6039 2N6036G 1N5825 2N6034 2N6035 2N6036 2N6038 MSD6100
    Text: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching


    Original
    PDF 2N6034, 2N6035, 2N6036; 2N6038, 2N6039 O-225AA 2N6034 2N6038 2N6036, 2N6034G 2N6039 2N6036G 1N5825 2N6034 2N6035 2N6036 2N6038 MSD6100

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Features • • • This device is designed for general purpose amplifier and low-speed switching applications.


    Original
    PDF 2N6036

    Untitled

    Abstract: No abstract text available
    Text: 2N6032+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50


    Original
    PDF 2N6032 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5629 2N5630 NPN 2N60Z9 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-3 CASE MAXIMUM RATINGS (TC=25°C unless otherwise noted)


    Original
    PDF 2N5629 2N5630 2N60Z9 2N6030 2N5630 2N6030 2N5629 2N6Q29

    Untitled

    Abstract: No abstract text available
    Text: 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original
    PDF 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 2N6034, 2N6037 O-126

    2N6038

    Abstract: 2N6034G 2n6038g 2N6036G 2N6034 1N5825 2N6035 2N6036 2N6039 MSD6100
    Text: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching


    Original
    PDF 2N6034, 2N6035, 2N6036; 2N6038, 2N6039 2N6034 2N6038 2N6036, 2N6038 2N6034G 2n6038g 2N6036G 2N6034 1N5825 2N6035 2N6036 2N6039 MSD6100

    2N6039

    Abstract: 2N6036 2n60 5064 DIODE
    Text: 2N6036 2N6039 Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment


    Original
    PDF 2N6036 2N6039 OT-32 2N6039 2N6036 2n60 5064 DIODE

    2N6036

    Abstract: 2N6039
    Text: 2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER


    Original
    PDF 2N6036 2N6039 2N6036 2N6039 OT-32 OT-32 2N6036/2N6039 O-126)

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original
    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    K800

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Features • This device is designed for general purpose amplifier and low-speed switching applications. PNP Darlington Power Transistor


    Original
    PDF 2N6036 K800

    2N6031 MOTOROLA

    Abstract: 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030
    Text: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original
    PDF 2N5630/D 2N5630 2N5631 2N6030 2N5630, 2N5631, 2N6031 2N6031 MOTOROLA 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030

    ic 7490

    Abstract: 2N60 transistor Ic 7490 circuit 2N6034 PNP 2N60 2N60 2N6037 2N6039 7490 ic 2N6035
    Text: # NPN PNP 2N60342N6037 2N60352N6038 2N60362N6039 @ PLASTIC DAR LINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. o High DC Current hFE = 2000 o Gain– Typ Collector-Emitter


    Original
    PDF 2N6034 2N6037 2N6035 2N6038 2N6036 2N6039 2N6034, 2N6035, ic 7490 2N60 transistor Ic 7490 circuit 2N6034 PNP 2N60 2N60 2N6037 2N6039 7490 ic 2N6035

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • •   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Halogen free available upon request by adding suffix "-HF" This device is designed for general purpose amplifier and low-speed


    Original
    PDF 2N6036 O-126

    BD278

    Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
    Text: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2


    OCR Scan
    PDF 2N6033 2N6032 2N6079 2N6103 f2N6111 T0-220AB 2N6108 O-220AA 2N6109 BD278 TO-220-AA 2N6102 2N6098 2N6099

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


    OCR Scan
    PDF MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631

    TA7337

    Abstract: 7337A 2N6033
    Text: Power Transistors File Number 462 HARR IS S E M I C O N D SE CT OR 2N6032, 2N6033 5 7 E T> 4 3 G 2271 G G m i l 1 WÊ HAS T=.3B-1“5 High-Current, High-Speed High-Power Transistors T E R M IN A L D E S IG N A T IO N S Silicon N -P -N T yp e s fo r H ig h -S p e e d S w itc h in g and


    OCR Scan
    PDF 2N6032, 2N6033 2N6033) 2N6032) 2N6032 2N6033* P60I9 TA7337 7337A 2N6033

    BUW23

    Abstract: No abstract text available
    Text: M U L T IE P IT A X IA L P LAN A R - TO -3 c o n tin u e d NPN BUX41 , BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 ' to« Vcio (V) Veto (V) lc (*) P» (W) 250 220 300 150 120 120 150 120 150 150 150 200 160 250 90 75 90 120 90 120


    OCR Scan
    PDF BUX41 BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 BUW23

    sc 6038

    Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
    Text: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching


    OCR Scan
    PDF t3b75SM 2N602Ô 2N6034 2N6035 2N6036 2N6034, 2N6037 2N6035, 2N6038 2N6036, sc 6038 N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037

    transistor 2n6038

    Abstract: 2N6039
    Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 P lastic Darlington C om plem entary Silicon Pow er Transistors PNP 2N 60 35 . . . designed for general-purpose amplifier and low -speed switching applications.


    OCR Scan
    PDF 2N6035/D 2N6035, 2N6038 2N6036, 2N6039 -225A 2N6030 2N6031 2N5630) 2N6035 transistor 2n6038