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    MSD6100 Price and Stock

    onsemi MSD6100

    DIODE ARRAY GP 100V 200MA TO92
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    DigiKey MSD6100 Bulk 10,000
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    onsemi MSD6100G

    DIODE ARRAY GP 100V 200MA TO92
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    DigiKey MSD6100G Bulk 10,000
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    onsemi MSD6100RLRA

    DIODE ARRAY GP 100V 200MA TO92
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    DigiKey MSD6100RLRA Reel 10,000
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    Rochester Electronics MSD6100RLRA 82,000 1
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    Rochester Electronics LLC MSD6100RLRA

    DIODE ARRAY GP 100V 200MA TO92
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    DigiKey MSD6100RLRA Bulk 6,662
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    onsemi MSD6100RLRAG

    DIODE ARRAY GP 100V 200MA TO92
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    DigiKey MSD6100RLRAG Reel 10,000
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    Rochester Electronics MSD6100RLRAG 38,039 1
    • 1 $0.0433
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    • 100 $0.0407
    • 1000 $0.0368
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    Find more MSD6100 price and stock on Findchips.com

    MSD6100 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSD6100 Motorola Dual Switching diode Common Cathode Original PDF
    MSD6100 ON Semiconductor Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 100V 200MA TO92 Original PDF
    MSD6100 On Semiconductor Dual Switching Diode Common Cathode Original PDF
    MSD6100 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    MSD6100 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MSD6100 Motorola European Master Selection Guide 1986 Scan PDF
    MSD6100 Motorola Dual switching diode common cathode. Scan PDF
    MSD6100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    MSD6100 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MSD6100 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    MSD6100/D On Semiconductor CASE 294, STYLE 3 TO2 (TO26AA) Original PDF
    MSD6100-D On Semiconductor Dual Switching Diode Common Cathode Original PDF
    MSD6100G On Semiconductor Small Signal T092 Switch Diode 100V Original PDF
    MSD6100RLRA ON Semiconductor Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 100V 200MA TO92 Original PDF
    MSD6100RLRA On Semiconductor Small Signal Dual Switch Diode Original PDF
    MSD6100RLRAG On Semiconductor Small Signal T092 Switch Diode 100V Original PDF

    MSD6100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSD6100

    Abstract: MSD6100G MSD6100RLRA MSD6100RLRAG
    Text: MSD6100 Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 msec) Total Device Dissipation @ TA = 25°C


    Original     		PDF MSD6100 MSD6100/D MSD6100 MSD6100G MSD6100RLRA MSD6100RLRAG

    Untitled

    Abstract: No abstract text available
    Text: MSD6100 Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 msec) Total Device Dissipation @ TA = 25°C


    Original     		PDF MSD6100 MSD6100/D

    MSD6100-D

    Abstract: MSD6100
    Text: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Power Dissipation @ TA = 25°C


    Original     		PDF MSD6100 226AA) MSD6100/D MSD6100-D MSD6100

    MSD6100

    Abstract: DIODE 6AA
    Text: MOTOROLA Order this document by MSD6100/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 1 2 3 CASE 29–04, STYLE 3 TO–92 TO–226AA 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


    Original     		PDF MSD6100/D MSD6100 226AA) MSD6100 DIODE 6AA

    MSD6100

    Abstract: No abstract text available
    Text: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Unit


    Original     		PDF MSD6100 226AA) r14525 MSD6100/D MSD6100

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 1 2 3 CASE 29–04, STYLE 3 TO–92 TO–226AA 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current


    Original     		PDF MSD6100 226AA) mA218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    MSD6100

    Abstract: No abstract text available
    Text: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Unit


    Original     		PDF MSD6100 O-226AA) MSD6100/D MSD6100

    MSD6100

    Abstract: No abstract text available
    Text: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Power Dissipation @ TA = 25°C


    Original     		PDF MSD6100 226AA) r14525 MSD6100/D MSD6100

    A 673 C2 transistor

    Abstract: tip41 369D-01
    Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


    Original     		PDF MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 AEC-Q101 MJD41C/D A 673 C2 transistor 369D-01

    MJE224

    Abstract: tip111g TIP11X
    Text: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •


    Original     		PDF TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP115 TIP116 MJE224 tip111g TIP11X

    to225a

    Abstract: to225aa TO-225AA to225
    Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170/180 MJE180 to225a to225aa TO-225AA to225

    TO-220AB transistor package

    Abstract: bdw42G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D TO-220AB transistor package

    MJD122

    Abstract: TIP125-TIP127 mjd122g
    Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES


    Original     		PDF MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g

    NJVMJD31CT4G

    Abstract: NJVMJD31T4G
    Text: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com


    Original     		PDF MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G TIP31 NJVMJD31CT4G NJVMJD31T4G

    mje802

    Abstract: transistor mje802 MJE703G MJE702 mje800 to225
    Text: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC


    Original     		PDF MJE700, MJE702, MJE703 MJE800, MJE802, MJE803 MJE700 MJE800 mje802 transistor mje802 MJE703G MJE702 to225

    TO247 CASE

    Abstract: No abstract text available
    Text: MJH6284 NPN , MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287


    Original     		PDF MJH6284 MJH6287 2N6284 2N6287 MJH6284/D TO247 CASE

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    PART NUMBER OF PNP 2A DPAK

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 MJD210 500mA QW-R209-019 PART NUMBER OF PNP 2A DPAK

    MSD6100

    Abstract: No abstract text available
    Text: MSD6100 silicon Silicon epitaxial dual switching diode, designed for use in high speed switching applications, features high breakdown voltage, low capacitance and space saving common-cathode configuration. 1 2 f CASE 29 3 rj S T Y L E 3: \ ° ° ° (TO-92)


    OCR Scan     		PDF MSD6100 MSD6100

    Untitled

    Abstract: No abstract text available
    Text: MSD6100* CASE 29-04, STYLE 3 TO-92 TO-226AA M AXIM U M R A TIN G S (EACH DIODE) Symbol Value Unit Vr 100 Vdc if 200 mA •FMIsurge) 500 mA Power Dissipation T a - 25°C Derate above 25°C P d OI 625 5.0 mW mW/°C Operating and Storage Junction Temperature Range


    OCR Scan     		PDF MSD6100* O-226AA)

    MSD6100

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MSD6100/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 3 Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VR 100 Vdc If 200 mAdc iFM(surge) 500 mAdc Power Dissipation @ T /\ = 25°C


    OCR Scan     		PDF MSD6100/D MSD6100 MSD6100

    25CC

    Abstract: No abstract text available
    Text: MSD6100* CASE 29-04, STYLE 3 TO-92 T0-226AA M AXIM UM RATINGS Symbol Value Unit Reverse Voltage Rating VR 100 Vdc R ecurrent Peak Forw ard C urrent If 200 mA •FM(surge) 500 mA pdm> 625 5.0 mW m W 'T - 5 5 to +135 CC Peak Forward Surge C urrent (Pulse W id th = 10 /¿sec)


    OCR Scan     		PDF MSD6100* T0-226AA) 25CC

    MSD6100

    Abstract: No abstract text available
    Text: MSD6100* CASE 29-04, STYLE 3 TO-92 TO-226AA M A X IM U M RATINGS (EACH DIODE) Rating Reverse Voltage Symbol Value Unit Vr 100 Vdc if 200 mA •FMisurge) 500 mA 625 5.0 mW mW/°C - 55 to +135 X Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 usee)


    OCR Scan     		PDF MSD6100* O-226AA) 3tj755£ MSD6100