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Central Semiconductor Corp 2N5210-PBFREE TRANS NPN 50V 0.05A TO92-3
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DigiKey	2N5210-PBFREE	Bulk	3,540		1	1 $0.85 10 $0.527 100 $0.85 1000 $0.23563 10000 $0.17581	Buy Now
Rochester Electronics LLC 2N5210 2N5210 - SMALL SIGNAL BIPOLAR TR
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DigiKey	2N5210	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi 2N5210TA TRANS NPN 50V 0.1A TO92-3
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DigiKey	2N5210TA	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2N5210TA	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	2N5210TA		11,000		1	1 $0.025 10 $0.025 100 $0.0235 1000 $0.0213 10000 $0.0213	Buy Now
Rochester Electronics LLC 2N5210TA 2N5210 - SMALL SIGNAL BIPOLAR TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5210TA	Bulk			11,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2N5210TA	Bulk			11,539	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2N5210TF TRANS NPN 50V 0.1A TO92-3
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DigiKey	2N5210TF	Bulk			11,539	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2N521 Datasheets (159)

Part	Manufacturer	Description	Datasheet Type	PDF
2N521	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N521	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N521	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N521	Unknown	GE Transistor Specifications	Scan	PDF
2N521	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N521	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N521	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N521	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N521	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N5210	Central Semiconductor	Small Signal Transistors TO-92 Case (Continued)	Original	PDF
2N5210	Central Semiconductor	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 50MA TO-92	Original	PDF
2N5210	Fairchild Semiconductor	NPN General Purpose Amplifier	Original	PDF
2N5210	Fairchild Semiconductor	NPN General Purpose Amplifier	Original	PDF
2N5210	Fairchild Semiconductor	NPN General Purpose Amplifier	Original	PDF

2N5210	On Semiconductor	Amplifier Transistor	Original	PDF
2N5210	Allegro MicroSystems	General Purpose Bipolar Transistor, NPN, 50 MinV, TO-92, 3-Pin	Scan	PDF
2N5210	Central Semiconductor	NPN EPOXY - LOW NOISE LEVEL AMPLIFIER / NPN EPOXY - RF/IF OSCILLATOR	Scan	PDF
2N5210	Central Semiconductor	Low Noise Level Amp / Oscillator / Switching Transistors	Scan	PDF
2N5210	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
2N5210	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF

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2N521 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N5210 Abstract: transistor 2N5210 2N5209 Text: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage	Original	2N5209/D 2N5209 2N5210 226AA) 2N5209/D* 2N5210 transistor 2N5210 2N5209	PDF
2N5210 Abstract: No abstract text available Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol	Original	2N5210/MMBT5210 OT-23 2N5210 O-92-3 2N5210BU 2N5210NMBU 2N5210TA 2N5210TAR 2N5210TF	PDF
Untitled Abstract: No abstract text available Text: 2N5217 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175# I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition)	Original	2N5217 Freq350M	PDF
Untitled Abstract: No abstract text available Text: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE	Original	BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961	PDF
2N5210 Abstract: MMBT5210 2n5210 equivalent Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol	Original	2N5210/MMBT5210 OT-23 2N5210 MMBT5210 2n5210 equivalent	PDF
Untitled Abstract: No abstract text available Text: 2N5211 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)600m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175# I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.	Original	2N5211 Freq200M	PDF
Untitled Abstract: No abstract text available Text: 2N5213 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175# I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition)	Original	2N5213 Freq350M	PDF
transistor 2N5210 Abstract: 2N5209 2N5210 Text: DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS TA=25°C	Original	2N5209 2N5210 2N5209 2N5210 transistor 2N5210	PDF
C312 diode Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292	Original	TN3440 2N3961 2N4012 2N5645 2N5079 MRF5175 2N5215 C3-12 2SC1947 2SC1965 C312 diode 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc	PDF
2N5210 Abstract: 2N5088 2N5210 c 2n5088 national Text: N 2N5210 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*	Original	2N5210 2N5088 2N5210 2N5210 c 2n5088 national	PDF
Untitled Abstract: No abstract text available Text: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*	Original	2N5210 2N5088	PDF
MMBT5210 Abstract: 3CTE Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol	Original	2N5210/MMBT5210 OT-23 2N5210TA 2N5210BU 2N5210 O-92-3 MMBT5210 3CTE	PDF
2n5210 equivalent Abstract: 2N5210 CBVK741B019 F63TNR PN2222N Text: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter	Original	2N5210 2n5210 equivalent 2N5210 CBVK741B019 F63TNR PN2222N	PDF
2N5088 equivalent Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088 Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	Original	2N5210 625mW 2N5088 100MHz Width300s, 2N5088 equivalent 2n5088 transistor transistor 2N5210 2N5210	PDF

Untitled Abstract: No abstract text available Text: 2N5219 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2N5219 Freq150M req150M	PDF
2SA564A-P Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372 Text: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A \| V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A	OCR Scan	2N5138 2N5172 O-92B 2N5209 O-92A 2N5210 2N5219 2IM5223 2SA564A-P 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2SA1715 2SC372	PDF
2N5219 Abstract: a5t5219 Text: TYPES 2N5219, A5T5219 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 2 6 , M A R C H 1 9 7 3 S IL E C T t T R A N S IS T O R S t • For Low-Level, Small-Signal, General Purpose Am plifier and Oscillator Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO -18 100-mil	OCR Scan	2N5219, A5T5219 100-mil 2N5219	PDF
Untitled Abstract: No abstract text available Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	2N5210 625mW 2N5088 100/iA, 100KHZ 20/iA 22KSJ	PDF
Untitled Abstract: No abstract text available Text: D is c re te P O W E R & S ig n a l Technologies e iM iP O N O iJ C T a « - 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1\|aA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.	OCR Scan	2N5210 2N5088	PDF
Untitled Abstract: No abstract text available Text: S3 S£ M 'C IC IM O , , n T a n 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.	OCR Scan	2N5210 2N5088	PDF
2N5088 Abstract: 2N5210 Text: S E F ^ ^ C N D ; -E T ^ a rî 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1^A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.	OCR Scan	2N5210 2N5088 2N5210	PDF
Untitled Abstract: No abstract text available Text: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Electrical Characteristics M axim um R a tin gs Typ« No. 2NS209 VEBO 'c s o (V) (V) Mn Mn Min (UA) Max 50 50 5 0.050 35 Min 50 50 5 0.050 35 'c & VCE (mA) (V) Max 150 10.00 5.0 150 1.00 5.0 0.10 5.0 100 2N5210 @	OCR Scan	2NS209 2N5232A O-92-1 2SC3114U BC182 BC182A 2N3693 O-92-4	PDF
2n5088 transistor Abstract: transistor 473 100khz 5v transistor 2N5088 2N5210 Text: NPN EPITAXIAL SILICON TRANSISTOR 2N5210 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	2N5210 625mW 2N5088 100KHZ 20MHz 20fiA 10Kfi 2n5088 transistor transistor 473 100khz 5v transistor 2N5210	PDF
2N5210 national Abstract: No abstract text available Text: 2N5210 í» Discrete POW ER & Signal Technologies National Semiconductor 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.	OCR Scan	2N5210 2N5088 2N5210 national	PDF

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2N521 Search Results

2N521 Price and Stock

Central Semiconductor Corp 2N5210-PBFREE

Rochester Electronics LLC 2N5210

onsemi 2N5210TA

Rochester Electronics LLC 2N5210TA

Rochester Electronics LLC 2N5210TF

2N521 Datasheets (159)

2N521 Datasheets Context Search

2N5210

2N5210

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2N5210

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transistor 2N5210

C312 diode

2N5210

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MMBT5210

2n5210 equivalent

2N5088 equivalent

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2SA564A-P

2N5219

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2N5088

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2n5088 transistor

2N5210 national