2N521 Search Results

2N5210

Abstract: transistor 2N5210 2N5209
Contextual Info: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage

2N5210

Contextual Info: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

Contextual Info: 2N5217 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175# I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition)

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

2N5210

Abstract: MMBT5210 2n5210 equivalent
Contextual Info: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol

Contextual Info: 2N5211 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)600m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175# I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

2N5219

Abstract: a5t5219
Contextual Info: TYPES 2N5219, A5T5219 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 2 6 , M A R C H 1 9 7 3 S IL E C T t T R A N S IS T O R S t • For Low-Level, Small-Signal, General Purpose Am plifier and Oscillator Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO -18 100-mil

Contextual Info: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 2N5213 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175# I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition)

transistor 2N5210

Abstract: 2N5209 2N5210
Contextual Info: DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS TA=25°C

Contextual Info: D is c re te P O W E R & S ig n a l Technologies e iM iP O N O iJ C T a « - 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: S3 S£ M 'C IC IM O , , n T a n 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292

2N5088

Abstract: 2N5210
Contextual Info: S E F ^ ^ C N D ; -E T ^ a rî 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1^A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Electrical Characteristics M axim um R a tin gs Typ« No. 2NS209 VEBO 'c s o (V) (V) Mn Mn Min (UA) Max 50 50 5 0.050 35 Min 50 50 5 0.050 35 'c & VCE (mA) (V) Max 150 10.00 5.0 150 1.00 5.0 0.10 5.0 100 2N5210 @

Contextual Info: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*

MMBT5210

Abstract: 3CTE
Contextual Info: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol

2n5210 equivalent

Abstract: 2N5210 CBVK741B019 F63TNR PN2222N
Contextual Info: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2n5088 transistor

Abstract: transistor 473 100khz 5v transistor 2N5088 2N5210
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR 2N5210 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2N5210 national

Contextual Info: 2N5210 í» Discrete POW ER & Signal Technologies National Semiconductor 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

2N5088 equivalent

Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088
Contextual Info: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 2N521A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)25 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.60 h(FE) Max. Current gain.250

Contextual Info: 2N5219 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)