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    ACRIAN Search Results

    ACRIAN Datasheets (256)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    0104-100 Acrian 100 W, 28 V, 100-400 MHz, balanced transistor Scan PDF
    0104-100-2 Acrian 100 W, 28 V, 100-400 MHz, balanced transistor Scan PDF
    0105-100 Acrian 100 W, 28 V, 100-500 MHz, UHF balanced transistor Scan PDF
    0105-100-2 Acrian 100 W, 28 V, 100-500 MHz, UHF balanced transistor Scan PDF
    0105-100-3 Acrian 100 W, 28 V, 100-500 MHz, UHF balanced transistor Scan PDF
    0105-12 Acrian 12 W, 28 V, 100-500 MHz, UHF balanced transistor Scan PDF
    0105-12-2 Acrian 12 W, 28 V, 100-500 MHz, UHF balanced transistor Scan PDF
    0105-50 Acrian 50 W, 28 V, 100-500 MHz, UHF balanced transistor Scan PDF
    0105-50-2 Acrian 50 W, 28 V, 100-500 MHz, UHF balanced transistor Scan PDF
    0204-125 Acrian 125 W, 28 V, 225-400 MHz, balanced transistor Scan PDF
    0204-125-2 Acrian 125 W, 28 V, 225-400 MHz, balanced transistor Scan PDF
    0204-125-3 Acrian 125 W, 28 V, 225-400 MHz, balanced transistor Scan PDF
    0204-125-4 Acrian 125 W, 28 V, 225-400 MHz, balanced transistor Scan PDF
    0510-10 Acrian 20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor Scan PDF
    0510-10-2 Acrian 20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor Scan PDF
    0912-25 Acrian 25 W, 50 V internally matched, common base transistor Scan PDF
    0912-25-2 Acrian 25 W, 50 V internally matched, common base transistor Scan PDF
    0912-25-3 Acrian 25 W, 50 V internally matched, common base transistor Scan PDF
    0912-45 Acrian 45 W, 50 V internally matched, common base transistor Scan PDF
    0912-45-2 Acrian 45 W, 50 V internally matched, common base transistor Scan PDF
    ...

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    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


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    PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    hf power amplifiers 2-30 mhz

    Abstract: S15-12 Scans-00115673 S15-12-2 UJ35
    Text: 0182998 ACRIAN IN C ~T7 »E^DlñETIñ D DG011SD 3 f - 3 3 - // S15-12 GENERAL DESCRIPTION 15 WATTS - 12.5 VOLTS 1.5 - 30 MHZ The S15-12 is recommended for use in HF Linear amplifiers. It is linearity and ruggedness make it ideal for use in driver stages. HF COMMUNICATIONS


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    PDF G102110 S15-12 S15-12 25cfc -65to f-30MHz, Vcc-12 100mA uJ-35 hf power amplifiers 2-30 mhz Scans-00115673 S15-12-2 UJ35

    simco

    Abstract: 1C41 linear amplifier 470-860 UTV-020 MJE172 UTV020 1j25 uj 09 acrian RF resistor 470-860 mhz Power amplifier 5 w
    Text: 0182998 ACRIAN T? INC fffU!5ifll8K!^5i^mp^p D E ^ G l f l a cHfl □ 0 ü l S 3 ci 7 T - 3 3 'O l 1P^SSü? IPP M M NHM M W HMnWI MT ^ W^OT MMM MHHI PMMi VMk Bllfmi Hmm RHM M I MUM HMM | GENERAL DESCRIPTION UTV-020 The UTV-020 Is specifically designed for Class A UHF TV Band


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    PDF UTV-020 860MHz MJE172 iFTANT50V 10jiF simco 1C41 linear amplifier 470-860 MJE172 UTV020 1j25 uj 09 acrian RF resistor 470-860 mhz Power amplifier 5 w

    acrian RF POWER TRANSISTOR

    Abstract: BAL0105-50 0105-50-2 IMPROVED DROP-IN D105-S0n Scans-00115696
    Text: 01 82 99 8 ACRIAN INC DE g o l f i s t a T7 DOGiaifl T I"D r ’- j j r - f j AN 0105-50 GENERAL DESCRIPTION The 0105-50 is an internally matched balanced transistor specifically designed for broadband Class A, AB or C high power applications from 100-500 MHz.


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    PDF BAL0105-50. D105-S0n/ 00D15E0 T-33-13 acrian RF POWER TRANSISTOR BAL0105-50 0105-50-2 IMPROVED DROP-IN D105-S0n Scans-00115696

    acrian

    Abstract: 25CC TPR175 TPR175-2 TPR175-3 acrian inc
    Text: 0182998 ACRIAN 97D 0 1DRR INC DE o i ñ S T T f l TPR175 G EN ER A L D E S C R IP TIO N The TPR175 utilizes the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically


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    PDF T-33-15 TPR175 Tf-30Â TPR175-3 175WI acrian 25CC TPR175-2 TPR175-3 acrian inc

    ACRIAN

    Abstract: C1-12 C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power
    Text: 0182998 ACRIAN 97D INC [ACRIAN INC T7 01318 DE D 7 "-7 3 -0 5 ' D i ñ a b a □DD131Û 5 |~¡ • IS iS IK E i w iJ S R £ S * ■ » mm M l ¡¿S I H P S P . H a l M U W m m m M m ms& I GENERAL C1-12 D E S C R IP TIO N 1 WATT - 12.5 VOLT 450-512 MHz The C1-12 is specifically designed for UHF


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    PDF C1-12 DQD132G" C1-12-3 470pf 005jif L4-1T3/16" ACRIAN C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power

    B45-12

    Abstract: B30-12 B45-12-3 B15-12 B45-12-2 Scans-00115716
    Text: 0182998 ACRIAN INC T? DE KS1 *B B 'M W5 mm SS>^»K CPmZt IP 1! 2 55 MRÜ mm K mm ¡15 5 SI S H Pi Sr. nal MMR R WWtawn B45-12 GENERAL DESCRIPTION 45 WATTS - 12.5 VOLTS 150-175 MHz The B45-12 is designed for VHF land mobile applications delivering 45 watts of RF power


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    PDF B45-12 B45-12 175MH 12ENCY B30-12 B45-12-3 B15-12 B45-12-2 Scans-00115716

    S100-28

    Abstract: hf amplifier 100w S100-28-2 S15-28 HF Amplifier 200w acrian inc acrian
    Text: 01829 98 ACRIAN INC T7 G EN ER A L 97D 0 1 138 D D E I lD lf lS T T f l 0 0 0 1 1 3 0 _ J = 3 3 -1 5 S100-28 D E S C R IP TIO N Ì00 WATTS - 28 VOLTS 30 MHz The S100-28 is specifically designed for HF linear applications. It's safe operating area and guaranteed


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    PDF S100-28 S100-28 hf amplifier 100w S100-28-2 S15-28 HF Amplifier 200w acrian inc acrian

    DME10

    Abstract: DME150 acrian inc
    Text: 0182998 G ENER A L ACRIAN INC 97D 01078 DME 150 D ES C R IP TIO N All devices utilize the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically for use in airborne DME.


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    PDF l-oj-15 Pw-10 VCC-50V 200fosec DME10 DME150 acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
    Text: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.


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    PDF S250-50 S250-50-3 Icq-100 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian
    Text: 0182998 ACRIAN INC GENERAL T? DE jOlflSTTfl □□□lOflfl 0 0912*45 DESCRIPTION 45 WATTS - 50 VOLTS 960-1215 MHz The 0912-45 is an internally matched, common base transistor providing 45 watts of pulsed RF output power across the 960-1215 MHz band. This transistor is


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    PDF -65to T-33-15 50VDC 10OpF acrian RF POWER TRANSISTOR 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian

    acrian RF POWER TRANSISTOR

    Abstract: JTDA50 JTDA50-2 Scans-00115670
    Text: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for


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    PDF JTDA50 UTDA50 JTDA50-2 acrian RF POWER TRANSISTOR JTDA50-2 Scans-00115670

    BAL0105-100

    Abstract: J3315 Scans-00115697
    Text: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved


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    PDF BAL0105-100. J05-100â 560mW BAL0105-100 J3315 Scans-00115697

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
    Text: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.


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    PDF 01fl2! C1-28 500MHz. C1-28Z. C1-28/C1-28Z -65to GDD117D C1-28/Z-4 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc

    UMIL60

    Abstract: C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
    Text: 0182998 ACRIAN INC ~t? d T J G ia s^ a cmoiaoM D jj-/y UMIL60 GENERAL DESCRIPTION The UMIL60 is a double input matched broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated Class A, AB, or C. Gold metallization


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    PDF 0D015G4 UMIL60 C2M60-28. 000120k T-33-13 UMIL60 C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662
    Text: 0182998 ACRIAN INC T? DE lOlñSTTfl DOOlOflS 5 | ~ D m w m G EN ER A L 0912-25 D E SC R IP TIO N 25 WATTS - 50 VOLTS 960-1215 MHz The 0912-25 is an internally matched, common base transistor providing 25 watts of pulsed RF output power across the 960-1215 MHz bandwidth. This hermetically


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    PDF -65to 50VDC acrian RF POWER TRANSISTOR z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662

    N1137

    Abstract: S100-12 S100-12-2 S100-12-3 HF power amplifier acrian inc
    Text: 0182998 ACRIAN INC S 1 00-12 GENERAL DESCRIPTION 100 WATTS - 12.5 VOLTS 1.5-30 MHz The S100-12 is designed for common emitter HF, SSB applications from a 12 volt supply. It may be operated Class A, AB or C. The device has emitter ballasting for ruggedness and reliability.


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    PDF S100-12 S100-12 n1137 T-33-15 S100-12-3 lo10A N1137 S100-12-2 S100-12-3 HF power amplifier acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: BAL0204-125 225-400MHz Q12-200 0105-50 acrian TG T-33-15 acrian inc
    Text: 0182998 ACRIAN INC □IñSnñ 97D 01159 OODllST fl T-33-15 0204-125 GENERAL DESCRIPTION 125 WATTS - 28 VOLTS 2 25-400M H Z The 0204-125 balanced transistor is designed to operate Class, A, AB or C over the 225-400MHz frequency range. It is an improved drop-in replacement for the BAL0204-125.


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    PDF T-33-15 225-400MHz BAL0204-125. acrian RF POWER TRANSISTOR BAL0204-125 Q12-200 0105-50 acrian TG T-33-15 acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
    Text: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed


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    PDF 125Woâ acrian RF POWER TRANSISTOR transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power

    acrian RF POWER TRANSISTOR

    Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1
    Text: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast


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    PDF T-33-13 VTV-300 F627-8 acrian RF POWER TRANSISTOR TU S1 3003 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8-Q1

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50
    Text: DE| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It


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    PDF -65to acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50

    acrian RF POWER TRANSISTOR

    Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
    Text: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    PDF

    acrian inc

    Abstract: Acrian acrian ic
    Text: 0182, 99.8 ACRIAN: INC, T7 DEI OlflETTfl □□D13t,2 S ACRIAN INC GENERAL 9B S E 2 D E S C R IP T IO N 2 WATTS * 22 VOLTS 960 MH2 The 9BSE2 is a common emitter, silicon bipolar transistor capable of providing 2 watts of output power at 960 MHz. The device is designed for cellular base station applications


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    PDF D13ti5 150Volts Ic-100mA acrian inc Acrian acrian ic

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w DME 40 acrian acrian inc
    Text: 0 182998 G EN ER A L ACRIAN INC 97D 01054 D V - 3 3 - /^ DME 375 D E S C R IPTIO N 375 WATTS - 50 VOLTS 1090 MHz The DME 375 is an internally matched, common base transistor capable of providing 375 watts of pulse RF output power at 10 microsecond pulse widths and 1 percent duty cycles across the


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    PDF 10jisec DME375-3 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w DME 40 acrian acrian inc