2N4410 TRANSISTOR Search Results

2N4410 MOTOROLA

Abstract: 2N4410 motorola 1N914 diode datasheet 1N914 maximum current rating of diodes
Contextual Info: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO

2N4409

Abstract: 2N4410 2N4410 MOTOROLA 2N5550
Contextual Info: MOTORCLA SC XSTRS/R 15E D I F b3b?5S4 00057=10 3 | t - w -z i 2N4409 2N4410 MAXIMUM RATINGS Symbol 2N4409 2N4410 U nit Collector-Emitter Voltage VCEO 50 80 Vdc Collector-Base Voltage VcBO 80 120 Vdc Emitter-Base Voltage Rating Ve b o 5.0 Vdc Collector Current — Continuous

2N4410

Abstract: 2N4410 Transistor Transistor marking code S
Contextual Info: 2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

2N4410

Contextual Info: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc

2N4410

Contextual Info: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 120 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc

2N4410

Abstract: 1N914 transistor 2N4410
Contextual Info: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

2N4410 Transistor

Abstract: 2N4410 equivalent DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage

Contextual Info: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor NPN Silicon 2 N 4 4 10 COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO

2N4409

Abstract: a5t4409
Contextual Info: TYPES 2N4409, 2N4410, A5T4409, A5T4410 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 7 4 , M A R C H 1 9 7 3 S ILE C T t T R A N S IS T O R S Ï FOR M E D IU M -C U R R E N T A M P L IF IE R APPLICATIO N S • High-Voltage Indicator and Display Control

2N4410

Contextual Info: 2N4410 MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V o lta g e VCEO 80 V dc C o lle c to r-B a s e V o lta g e v CBO 120 V dc E m itte r-B a s e V o lta g e v EBO 5.0 V dc C o lle c to r C u rre n t — C o n tin u o u s ¡c 250 m Adc

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

2N4410 MOTOROLA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO 120 V dc E m itte r-B a s e Voltage C o lle c to r-E m itte r Voltage Unit v EBO

BC118

Abstract: BC537 BC538 FAIRCHILD TO-106 2N2484 BC125 BC537-10 BC537-6 fairchild semiconductors BC538-10
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose Am plifier and Sw itching Transistors P la s tic P a c k a g e T O 92, T O 105, T O 106 REFEREN CE T A B L E S e e a ls o lo w level and hig h v o ltag e s e ctio n .

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n5133 bc209

Abstract: 2N5133 BC208C BC209 BC528 noise BC209B BC209C 2N4033 N82C55A2 BC538-16
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqeO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) NPN PNP 1 MPSA06 2 BC538-10 BC528-10 3 MPSA56 @ 'c VCE(aat) V @ lC Max mA mA M in/M ax C0 b

2N4424

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical C haracteristics (Ta=25 'C, Unless O therw ise Specified) Maximum Ratings Type CBO No. (V) Min ^CEO i ^EBO (V) ! (V) Min Min Po leso ^CB 'CES <W) (HA) Max (V ) (MA) 0.4 20 @Tc=25°c 0.625 2N4294 0.2 hpE

2N4286

Abstract: 2N4292 2N3903 2N3904 2N4123 2N4124 2N4287 2N4293 2N4294 2N4295
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBi (V) Min ^CEC (V) Min 60 45 2N3903 60 2N3904 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^EBO Pd (V) (W) (A) Min @Tc=25 °c 6 40 6 kwj ^CB (MA) @<V) Max 0.625 0.2 (JA)

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (VI Min 2N3903 60 Vceo (V) Min ^ebo w Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) Tc=25°< 0.625 " fé Max Min Max 0.2 *0.05 30 0.625 0.2 *0.05 30 0.625

2N3638

Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW

2N5129

Abstract: 2n4141 TP5059 2N3904 2N3974 2N3976 2N4123 2N4124 2N4140 2N4286
Contextual Info: S P R A G U E / SE MI CO ND GROUP 8514019 SPRAGUE. =13 D • Ô513ÔS0 D0035Ö7 5 ■ S E M IC O N D S /IC S 93D 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain

Allegro 40e

Abstract: 2N5129 2N3904 2N3974 2N3976 2N4123 2N4124 2N4140 2N4141 2N4286
Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 19 S P R A G U E . ^3 D • 05GM33Ö 0003507 SEMICONDS / IC S 4 ■ ALGR 0 3 5 8 7 2>\ 93D ~T^ PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device

BC118

Abstract: transistor BC118 BFR37 SGS 2n2388 2N706 BC125 BC537 fairchild to-106 fairchild semiconductors BC537-10
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose Am plifier and Sw itching Transistors P la stic P a ck a g e TO 92, T O 105, TO 106 REFEREN CE T A B L E S e e a ls o lo w level and hig h v o ltag e s e ctio n .