2N21 Search Results

2N2160

Contextual Info: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

2N2115

Abstract: 2N2849-2 TO111 package 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-3
Contextual Info: _ B t U iU E L E C T R O N IC S , IN C .\- 9 COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No Case 2N2150 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111

2N2192A

Contextual Info: 2N2192A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)

2N2192L

Abstract: TO205AA
Contextual Info: 2N2192L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

2N3186

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 2N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

40409

Abstract: 40361 40317 40314 40323 2n2102 2n697a 40311 40407 40814
Contextual Info: 2N2102 FA M ILY [n-p-n] silicon f r = 120 MHz min; Py = 5 W max V R E (s a t)- V V p p (ia t)- V DESCRIPTION V C E O (sus) 2N TYPES V V V Tem p. -°c Curren t- m A V C E R<»U*) V C E V (sus) 0.01 0.1 10 50 150 - - - 'c 'C B •c 'b mA mA 1.5 150 15 1.3

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

Contextual Info: F 2N2193 NPN SILICON TRANSISTOR TO-39 2 N 2 1 93 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage

2N2193

Abstract: 002120
Contextual Info: IvKU 2N2193 NPN SILICON TRANSISTOR TO-39 2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage

2N2150

Abstract: 2N2151 1000C
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/277 Devices Qualified Level 2N2150 2N2151 JANTX MAXIMUM RATINGS TC = 250C unless otherwise noted Ratings Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

MP2145

Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63

3560M

Contextual Info: 2N2102 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N2194A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

2N2856

Abstract: a/TO111
Contextual Info: A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 fl 26C 00221 ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3

2N2109

Abstract: 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119
Contextual Info: POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ » V ra g g i n ra s i r m « M V V A Watts V <2 tlF E MIN MAX le A Vce V Test Sat Voltages Conditions Ib Imo* V a V be le V V A A ma 2N2109 250 50 50 15 30 10 10 4 1.5 Ì.5 10 T ~ 2N2110 250 100 100 15

Contextual Info: m 2N2193A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2193A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 1.0 A V ce 50 V V cb 80 V P diss 2.8 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC

Contextual Info: 2N2102 • 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package A MEDIUM POWER DEVICE FOR USE IN AMPLIFIER AND HIGH SPEED NON SATURATING SWITCHES APPLICATION

2N2150

Contextual Info: TYPES 2N2150, 2N2151 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS 33 03 —I FOR POWER-AMPLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS m C < 2 3 rr HI m W 2 - In 0 - 2 tf M m z m 3 P p 3 r • Dissipation Capability of 30 W at 40 V , Tc= 100°C

2N2102A

Contextual Info: TYPES 2N2102, 2N2102A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 4 6 , M A R C H 1 9 7 3 FO R M ED IU M -PO W ER , G E N E R A L PU R PO SE A P P L IC A T IO N S • High Breakdown Voltage Combined with Low Saturation Voltage • hFE • ■ ■ Guaranteed from 10 m A to 1 A